Views: 192
Language: English
Modeling and simulation of single-electron transistors
Available online at http://www.ibnusina.utm.my/jfs
Fundamental Sciences
Journal of
Article
Modeling and simulation of single-electron ... more>>
Tags: single-electron transistors,
coulomb blockade,
modeling and simulation,
electron tunneling,
single-electron transistor,
electron transistors,
single-electron devices,
single electron transistor,
tunnel junctions,
device physics,
quantum dots,
single electronics,
monte carlo method,
mv logic,
spice simulation
Views: 0
Language:
High mobility transparent thin-film transistors with amorphous zinc
APPLIED PHYSICS LETTERS 86, 013503 (2005)
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
H. Q. ... more>>
Tags: zinc oxide,
thin-film transistors,
thin film transistors,
thin films,
transparent electronics,
thin film,
room temperature,
oregon state university,
indium oxide,
printed electronics,
tin oxide,
silicon transistors,
applied physics letters,
carbon nanotubes,
new class
Views: 0
Language:
Gallium Nitride ( GaN ) Based Transistors
Gallium Nitride (GaN) Based Transistors
Jason Ross – Physics Santa Barbara City College Mentor: Nidhi Faculty Advisor: Umesh Mishra Department of Ele ... more>>
Tags: gallium nitride,
power transistor,
silicon carbide,
high electron mobility transistor,
output power,
base stations,
power amplifier,
power consumption,
high frequency,
high output power,
hemt amplifiers,
negative voltage,
high power,
breakdown voltages,
gallium arsenide
Views: 0
Language:
Nanoscale Transistors Device Physics, Modeling, and Simulation
Nanoscale Transistors: Device Physics, Modeling, and Simulation
Mark Lundstrom Electrical and Computer Engineering Purdue University West Lafayette, ... more>>
Tags: device physics,
mark lundstrom,
modeling and simulation,
jing guo,
silicon transistors,
nanoscale devices,
last half,
channel length,
driving force,
semiconductor devices,
solid state physics,
simulation tools,
customer reviews,
nanostructured materials,
field-effect transistors
Views: 0
Language: