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International Journal of Computer Science, Engineering and Information Technology(IJCSEIT)
International Journal of Information Technology, Modeling and Computing (IJITMC)
Machine Learning and Applications: An International Journal (MLAIJ)
Computer Game Development and Education: An International Journal (CGDEIJ)
International Journal of Artificial Intelligence & Applications (IJAIA)
International Journal on AdHoc Networking Systems (IJANS)
Third International Conference on Software Engineering and Applications (SEAS-2014)
Impact of Parameter Variations and Optimization on DG-PNIN Tunnel FET.pdf
The downscaling of conventional MOSFETs has come to its fundamental limits. TFETs are very attractive devices for low power applications because of their low off-current and potential for smaller sub threshold slope. In this paper, the impact of various parameter variations on the performance of a DG-PNIN Tunnel field effect transistor is investigated. In this work, variations in gate oxide material, source doping, channel doping, drain doping, pocket doping and body thickness are studied and all these parameters are optimized as performance boosters to give better current characteristics parameters. After optimization with all these performance boosters, the device has shown improved performance with increased on-current and reduced threshold voltage and the Ion/Ioff ratio is > 106.
FPGA Based Efficient Multiplier for Image Processing Applications Using Recursive Error Free Mitchell Log Multiplier and KOM Architecture
Design of a Novel Current Balanced Voltage Controlled Delay Element
Design of 6-Bit Flash Analog to Digital Converter Using Variable Switching Voltage CMOS Comparator.pdf
Analytical Modeling of Electric Field Distribution in Dual Material Junctionless Surrounding Gate MOSFETs
Compact Low-Power High Slew-Rate CMOS Buffer Amplifier with Power Gating Technique
An Efficient Multi Resolution Filter Bank Based on DA Based Multiplication
A Novel Approach for Leakage Power Reduction Techniques in 65nm Technologies
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