Patent Inventor: Zheng Gao

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Magnetic sensor with perpendicular anisotrophy free layer and side shields
Inventor: Dimitrov, et al. | Patent Number: 8125746

Computer housing
Inventor: Raff, et al. | Patent Number: 8111505

Magnetic sensing device including a sense enhancing layer
Inventor: Gao, et al. | Patent Number: 8091209

Magnetic stack with laminated layer
Inventor: Zheng, et al. | Patent Number: 8039913

Structures for resistive random access memory cells
Inventor: Li, et al. | Patent Number: 8000128

Magnetic stack having reference layers with orthogonal magnetization orientation directions
Inventor: Zheng, et al. | Patent Number: 7999338

Spin-transfer torque memory self-reference read and write assist methods
Inventor: Zhu, et al. | Patent Number: 7961509

STRAM with electronically reflective insulative spacer
Inventor: Zheng, et al. | Patent Number: 7940551

Magnetic stack having assist layer
Inventor: Zheng, et al. | Patent Number: 7936598

Magnetic sensing device including a sense enhancing layer
Inventor: Gao, et al. | Patent Number: 7929259

Magnetic sensor including a free layer having perpendicular to the plane anisotropy
Inventor: Xue, et al. | Patent Number: 7929258

Magnetic memory with separate read and write paths
Inventor: Lu, et al. | Patent Number: 7881104

Stram with self-reference read scheme
Inventor: Zheng, et al. | Patent Number: 7876604

Multi-bit STRAM memory cells
Inventor: Dimitrov, et al. | Patent Number: 7834385

Spin-transfer torque memory self-reference read and write assist methods
Inventor: Zhu, et al. | Patent Number: 7826260

Magnetic sensing device including a sense enhancing layer
Inventor: Gao, et al. | Patent Number: 7800868

Structures for resistive random access memory cells
Inventor: Li, et al. | Patent Number: 7791925

Magnet tunneling junction with RF sputtered gallium oxide as insulation barrier for recording head
Inventor: Gao, et al. | Patent Number: 7453673

Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments
Inventor: Mao, et al. | Patent Number: 7035062

Tunneling barrier material for a magnetic recording head
Inventor: Gao, et al. | Patent Number: 6791806

Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature
Inventor: Mao, et al. | Patent Number: 6738236

Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation
Inventor: Mack, et al. | Patent Number: 6724584

Magnetoresistive sensor with reduced side-reading effect
Inventor: Chen, et al. | Patent Number: 6713800

Spin valve head with exchange bias stabilized free layer
Inventor: Mao, et al. | Patent Number: 6556392

Spin valve sensors with an oxide layer utilizing electron specular scattering effect
Inventor: Mao, et al. | Patent Number: 6556390

Method of fabricating a spin valve/GMR sensor having a synthetic antiferromagnetic layer pinned by Mn-alloy
Inventor: Mao, et al. | Patent Number: 6548114

Giant magnetoresistive sensor with a CrMnPt pinning layer and a NiFeCr seed layer
Inventor: Gao, et al. | Patent Number: 6498707

Giant magnetoresistive sensor with a PtMnX pinning layer and a NiFeCr seed layer
Inventor: Mao, et al. | Patent Number: 6490140

Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation
Inventor: Mack, et al. | Patent Number: 6469878

Spin valve sensor with exchange tabs
Inventor: Mack, et al. | Patent Number: 6462919

Giant magnetoresistive sensor with pinning layer
Inventor: Mao, et al. | Patent Number: 6433972

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