Patent Inventor: Valentin N. Todorow
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Gas flow equalizer plate suitable for use in a substrate process chamber
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Method to control uniformity using tri-zone showerhead
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Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process
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Process for wafer backside polymer removal and wafer front side photoresist removal
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Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
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Cathode liner with wafer edge gas injection in a plasma reactor chamber
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Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
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Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures
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Pulsed-plasma system for etching semiconductor structures
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Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
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Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
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Plasma reactor apparatus with independent capacitive and toroidal plasma sources
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Plasma reactor having a symmetric parallel conductor coil antenna
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Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber
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Plasma reactor having a symmetrical parallel conductor coil antenna
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Plasma reactor having a symmetrical parallel conductor coil antenna
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Pulsed RF power delivery for plasma processing
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Plasma reactor having a symmetric parallel conductor coil antenna
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Plasma reactor having a symmetric parallel conductor coil antenna
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Plasma reactor having a symmetric parallel conductor coil antenna
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