Patent Inventor: Srinivas D. Nemani
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Process sequence for formation of patterned hard mask film (RFP) without need for photoresist or dry etch
Inventor: Nemani, et al. | Patent Number: 8153348
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Dopant activation in doped semiconductor substrates
Inventor: Munro, et al. | Patent Number: 7989366
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Methods for forming a silicon oxide layer over a substrate
Inventor: Nemani, et al. | Patent Number: 7943531
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Deposition-plasma cure cycle process to enhance film quality of silicon dioxide
Inventor: Chen, et al. | Patent Number: 7902080
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High quality silicon oxide films by remote plasma CVD from disilane precursors
Inventor: Mallick, et al. | Patent Number: 7867923
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Curing methods for silicon dioxide multi-layers
Inventor: Mallick, et al. | Patent Number: 7825044
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Method for depositing and curing low-k films for gapfill and conformal film applications
Inventor: Munro, et al. | Patent Number: 7790634
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Two-layer film for next generation damascene barrier application with good oxidation resistance
Inventor: Zheng, et al. | Patent Number: 7749563
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Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
Inventor: Mallick, et al. | Patent Number: 7745352
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Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO.sub.2
Inventor: Chen, et al. | Patent Number: 7745351
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Method and system for improving dielectric film quality for void free gap fill
Inventor: Mallick, et al. | Patent Number: 7541297
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Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
Inventor: Nemani, et al. | Patent Number: 7524750
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Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II--remote plasma enhanced deposition processes
Inventor: Mallick, et al. | Patent Number: 7498273
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Apparatus for abatement of by-products generated from deposition processes and cleaning of deposition chambers
Inventor: Pokharna, et al. | Patent Number: 7494628
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Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO.sub.2
Inventor: Chen, et al. | Patent Number: 7465680
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Method for forming ultra low k films using electron beam
Inventor: Zheng, et al. | Patent Number: 7422774
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Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications
Inventor: Krishnaraj, et al. | Patent Number: 7189639
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Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications
Inventor: Lee, et al. | Patent Number: 7151053
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Silicon oxide gapfill deposition using liquid precursors
Inventor: Nemani, et al. | Patent Number: 7087536
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Method for forming ultra low k films using electron beam
Inventor: Zheng, et al. | Patent Number: 7060330
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Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers
Inventor: Pokharna, et al. | Patent Number: 7060234
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Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
Inventor: Yim, et al. | Patent Number: 7056560
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Method for cleaning a process chamber
Inventor: Zheng, et al. | Patent Number: 6902629
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Method for depositing a low dielectric constant film
Inventor: Gaillard, et al. | Patent Number: 6897163
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Method of depositing dielectric materials in damascene applications
Inventor: Lee, et al. | Patent Number: 6890850
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Side wall passivation films for damascene cu/low k electronic devices
Inventor: Nguyen, et al. | Patent Number: 6878620
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Use of cyclic siloxanes for hardness improvement of low k dielectric films
Inventor: Singh, et al. | Patent Number: 6815373
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Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power
Inventor: Rocha-Alvarez, et al. | Patent Number: 6797643
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Method and apparatus for processing semiconductor substrates with hydroxyl radicals
Inventor: Pokharna, et al. | Patent Number: 6596343
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Method of depositing organosillicate layers
Inventor: Gaillard, et al. | Patent Number: 6531398