Patent Inventor: Gene Y. Kohara
-
Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor features
Inventor: Chiang, et al. | Patent Number: 7989343
-
Method of depositing a metal seed layer over recessed feature surfaces in a semiconductor substrate
Inventor: Chiang, et al. | Patent Number: 7795138
-
Metal / metal nitride barrier layer for semiconductor device applications
Inventor: Ding, et al. | Patent Number: 7687909
-
Method of depositing a sculptured copper seed layer
Inventor: Chiang, et al. | Patent Number: 7589016
-
Method of depositing a metal seed layer on semiconductor substrates
Inventor: Chiang, et al. | Patent Number: 7381639
-
Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
Inventor: Ding, et al. | Patent Number: 7253109
-
Method of depositing a metal seed layer on semiconductor substrates
Inventor: Chiang, et al. | Patent Number: 7074714
-
Method of preventing diffusion of copper through a tantalum-comprising barrier layer
Inventor: Chiang, et al. | Patent Number: 6919275
-
Damage-free sculptured coating deposition
Inventor: Chiang, et al. | Patent Number: 6758947
-
Method and apparatus for shielding a device from a semiconductor wafer process chamber
Inventor: Brezoczky, et al. | Patent Number: 6620250
-
Sputter deposited barrier layers
Inventor: Kim, et al. | Patent Number: 6271592
-
Method for forming titanium silicide in situ
Inventor: Kohara, et al. | Patent Number: 6110821
-
Oxygen enhancement of ion metal plasma (IMP) sputter deposited barrier layers
Inventor: Kim, et al. | Patent Number: 5985759