Patent Inventor: Christopher S. Olsen

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Dual frequency low temperature oxidation of a semiconductor device
Inventor: Ma, et al. | Patent Number: 8043981

Method of selective nitridation
Inventor: Olsen, et al. | Patent Number: 7972933

Method of forming dielectric layers on a substrate and apparatus therefor
Inventor: Olsen, et al. | Patent Number: 7910497

Plasma surface treatment for SI and metal nanocrystal nucleation
Inventor: Olsen, et al. | Patent Number: 7846793

Silicon oxynitride gate dielectric formation using multiple annealing steps
Inventor: Olsen | Patent Number: 7429540

Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric
Inventor: Olsen | Patent Number: 7429538

Method for improving nitrogen profile in plasma nitrided gate dielectric layers
Inventor: Olsen | Patent Number: 7122454

Trench fill process for reducing stress in shallow trench isolation
Inventor: Olsen | Patent Number: 6653200

Method for determining nitrogen concentration in a film of nitrided oxide material
Inventor: Olsen, et al. | Patent Number: 6313466

Trench-diffusion corner rounding in a shallow-trench (STI) process
Inventor: Olsen | Patent Number: 6150234

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