Description
A. This class provides for manufacturing a semiconductor containinga solid-state device by a combination of operations wherein:
(1) no other class provides for the overall combination, and
(2) the intent is to use the electrical properties of the semiconductorin the device for at least one of the following purposes: (a) conductingor modifying an electrical current, (b) storing electrical energyfor subsequent discharge within a microelectronic integrated circuit,or (c) converting electromagnetic wave energy to electrical energyor electrical energy to electromagnetic energy.
B. This class provides for a species of Class 427 operationsinvolving:
(1) coating a substrate with a semiconductive material, or
(2) coating a semiconductive substrate or substrate containinga semiconductive region;
wherein the intent is to use the electrical properties of thesemiconductor in a solid-state device for at least one of the followingpurposes: (a) conducting or modifying an electrical current, (b)storing electrical energy for subsequent discharge within a microelectronicintegrated circuit, or (c) converting electromagnetic wave energyto electrical energy or electrical energy to electromagnetic energy.
C. This class provides for a species of Class 216 operationsinvolving etching a semiconductive substrate or etching a substratecontaining a semiconductive region, wherein the intent is to usethe electrical properties of the semiconductor in a solid-statedevice for at least one of the following purposes:
(1) conducting or modifying an electrical current,
(2) storing electrical energy for subsequent discharge withina microelectronic integrated circuit, or
(3) converting electromagnetic wave energy to electrical energyor electrical energy to electromagnetic energy.
D. This class provides for packaging (e.g., with mounting,encapsulating, etc.) or treatment of packaged semiconductor, when not elsewhere provided, wherein there are:
(1) multiple operations having a step of permanently attachingor securing a semiconductive substrate to a terminal, elongatedconductor, or support (e.g., mounting, housing, lead frame, discreteheat sink, etc.),
(2) multiple operations having a step of shaping flowableplastic or flowable insulative material about a semiconductive substrate,or
(3) a step of treating an already packaged semiconductor substrate(e.g., coating, etching, etc.); if the following conditions arealso met: (a) there is significant semiconductorchip structure (e.g., such as recited semiconductor junction, etc.)or named semiconductor device (e.g., DRAM, CMOS, EPROM, etc.), or(b) there is no significant semiconductor structure if also combinedwith a coating operation of this class (see B above) or etching operationof this class (see C above), and (c) the intent is to use the electricalproperties of the semiconductor in a solid-state device for at leastone of the following purposes: (i) conducting or modifying an electricalcurrent, (ii) storing electrical energy for subsequent discharge withina microelectronic integrated circuit, or (iii) converting electromagneticwave energy to electrical energy or electrical energy to electromagneticenergy;
(1)Note. When Class 438 coating (see B above) or etching operations(see C above) are not included,Class 29, following historical precedence, provides for processesof mounting, packaging, molding, or encapsulating of semiconductorshaving no significant semiconductor chip structure (e.g., merelyrecited as semiconductor chip, per se, etc.) when not elsewhereprovided.E. This is the generic class for operations not elsewhereprovided for treating a semiconductive substrate or substrate containing asemiconductive region; wherein the intent is to use the semiconductorin a solid-state device for at least one of the following purposes:(1) conducting or modifying an electrical current,(2) storing electrical energy for subsequent discharge withina microelectronic integrated circuit, or(3) converting electromagnetic wave energy to electrical energyor electrical energy to electromagnetic energy.
(1)Note. Lacking an indication that the semiconducting materialis to be used for a purpose other than (a) conducting or modifyingan electrical current, (b) storing electrical energy for subsequentdischarge within a microelectronic integrated circuit, or (c) convertingelectromagnetic wave energy to electrical energy or electrical energyto electromagnetic energy; it will be assumed that the process meetsthe Class 438 definition.
(2)Note. For this class certain materials will be consideredto be semiconductors even if there is no other indication that semiconductingproperties are present. Thus, if the criteria set forth under the(1) Note is met that there is no indication that the material isto be used for a purpose other than (a), (b), or (c), the followingmaterials are to be considered semiconductive: silicon, germanium,selenium, tellurium, gallium nitride, gallium phosphide, galliumarsenide, aluminum phosphide, aluminum arsenide, and mercury cadmiumtelluride.