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Sort by: most recent | most downloaded | most viewed Per Page: 152550 1234...19Next » Crystal Manufacturing - Patent 8152921 pgs. 31 The invention relates to an apparatus and a method of manufacturing crystals by means of the Czochralski-related technique in general level, but more  ...   ...  More » Tags: Crystal manufacturing, Anttila, et al., Olli Anttila, Ari Saarnikko, Jari Paloheimo, Application number 11 514-177, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 35 views Language: English Methods For Epitaxial Silicon Growth - Patent 8152918 pgs. 8 Epitaxial silicon is used in a variety of semiconductor devices when a pure silicon layer is required. Epitaxial silicon is generally grown on a... ...   ...  More » Tags: Methods for epitaxial silicon growth, Zhang, et al., Jingyan Zhang, Er-Xuan Ping, Application number 11 478-401, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 26 views Language: English Epitaxial Silicon Wafer And Fabrication Method Thereof - Patent 8152919 pgs. 13 1. Field of the Invention The present invention relates to an epitaxial silicon wafer and a fabrication method thereof. More particularly, the... ...   ...  More » Tags: Epitaxial silicon wafer and fabricati..., Dohi, et al., Takayuki Dohi, Shinji Nakahara, Masaya Sakurai, Masato Sakai, Application number 13 164-511, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 30 views Language: English Crucible For The Crystallization Of Silicon - Patent 8152920 pgs. 6 1. Field of the Invention The invention relates to a crucible for the crystallization of silicon and to the preparation and application of release... ...   ...  More » Tags: Crucible for the crystallization of s..., Rancoule, Gilbert Rancoule, Application number 11 994-151, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 27 views Language:  Crystal Puller And Method For Growing A Monocrystalline Ingot - Patent 8147613 pgs. 96 The present invention relates to a crystal puller and method for growing single crystal semiconductor material, and more particularly to a crystal... ...   ...  More » Tags: Crystal puller and method for growing..., Kulkarni, Milind Kulkarni, Application number 10 705-813, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 29 views Language: English Method For Manufacturing Gallium Nitride Crystal And Gallium Nitride Wafer - Patent 8147612 pgs. 34 The present invention relates to a method for fabricating a gallium nitride crystal, and also relates to a gallium nitride wafer.BACKGROUND ART... ...   ...  More » Tags: Method for manufacturing gallium nitr..., Uemura, et al., Tomoki Uemura, Takashi Sakurada, Shinsuke Fujiwara, Takuji Okahisa, Koji Uematsu, Hideaki Nakahata, Application number 12 298-332, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 23 views Language: English Method Of Manufacturing Single Crystal - Patent 8147611 pgs. 9 The present invention relates to a method of manufacturing a single crystal based on a Czochralski method of applying a magnetic field, and more... ...   ...  More » Tags: Method of manufacturing single crystal, Sakurada, et al., Masahiro Sakurada, Izumi Fusegawa, Application number 11 988-295, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 26 views Language: English Method For Producing Ga-containing Nitride Semiconductor Single Crystal Of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 And 0<=t<1) O - Patent 8142566 pgs. 17 TECHNICALFIELD The present invention relates to a Ga-containing nitride semiconductor single crystal with less crystal defects and good... ...   ...  More » Tags: Method for producing Ga-containing ni..., 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a s..., Kiyomi, et al., Kazumasa Kiyomi, Hirobumi Nagaoka, Hirotaka Oota, Isao Fujimura, Application number 11 659-420, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 22 views Language:  Vitreous Silica Crucible For Pulling Single-crystal Silicon - Patent 8142565 pgs. 9 1. Field of the Invention The present invention relates to a vitreous silica crucible which is used for pulling single-crystal silicon, and more... ...   ...  More » Tags: Vitreous silica crucible for pulling ..., Kishi, et al., Hiroshi Kishi, Minoru Kanda, Application number 12 325-033, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 28 views Language: English Epitaxial Growth Of ZnO With Controlled Atmosphere - Patent 8137458 pgs. 34 A) Field of the Invention The present invention relates to ZnO crystal and its growth method. The present invention relates also to a manufacture... ...   ...  More » Tags: Epitaxial growth of ZnO with controll..., Kato, et al., Hiroyuki Kato, Michihiro Sano, Application number 12 028-310, Single-Crystal Oriented-Crystal And E..., Semiconductor Device Manufacturing: P...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 23 views Language: English One-pot Synthesis Of High-quality Metal Chalcogenide Nanocrystals Without Precursor Injection - Patent 8137457 pgs. 22 The formation of high-quality semiconductor nanocrystals, with well-controlled size and shape as well as well-confined surface passivation, can be... ...   ...  More » Tags: One-pot synthesis of high-quality met..., Cao, et al., Yunwei Charles Cao, Ou Chen, Application number 12 249-586, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 29 views Language: English Method For Producing Nanoparticles For Magnetic Fluids By Electron-beam Evaporation And Condensation In Vacuum, A Magnetic Fluid Producing Method And Magnetic Fluid Produced Accord - Patent 8137459 pgs. 9 FIELD OFTHE INVENTION The invention relates to producing magnetic fluids and to synthesis of novel materials in vacuum and may be applied in... ...   ...  More » Tags: Method for producing nanoparticles fo..., a magnetic fluid producing method and..., Paton, et al., Boris Paton, Boris Movchan, Iurii Kurapov, Application number 12 667-472, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 25 views Language: Latin Piezoelectric Substrate, Piezoelectric Element, Liquid Discharge Head And Liquid Discharge Apparatus - Patent 8137461 pgs. 15 1. Field of the Invention The present invention relates to a piezoelectric substrate, a piezoelectric element and a liquid discharge head to be used  ...   ...  More » Tags: Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid disc..., Matsuda, et al., Takanori Matsuda, Toshihiro Ifuku, Application number 12 554-238, Single-Crystal Oriented-Crystal And E..., Electrical Generator Or Motor Structure  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 26 views Language:  Manufacturing Method Of GaN Thin Film Template Substrate, GaN Thin Film Template Substrate And GaN Thick Film Single Crystal - Patent 8137460 pgs. 9 The present invention relates to a manufacturing method of a GaN thin film template substrate, which is applied with a hydride vapor phase epitaxy,... ...   ...  More » Tags: Manufacturing method of GaN thin film..., GaN thin film template substrate and ..., Morioka, et al., Satoru Morioka, Misao Takakusaki, Takayuki Shimizu, Application number 12 441-483, Single-Crystal Oriented-Crystal And E..., Semiconductor Device Manufacturing: P...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 30 views Language: English Process For Producing Silicon Carbide Single Crystal - Patent 8133321 pgs. 29 The present invention relates to a process for producing a silicon carbide single crystal that makes it possible to produce a silicon carbide single... ...   ...  More » Tags: Process for producing silicon carbide..., Kawahara, et al., Takamitsu Kawahara, Kuniaki Yagi, Naoki Hatta, Hiroyuki Nagasawa, Application number 11 886-065, Single-Crystal Oriented-Crystal And E..., Semiconductor Device Manufacturing: P...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 20 views Language:  Production Process Of Periodic Table Group 13 Metal Nitride Crystal And Production Method Of Semiconductor Device Using The Same - Patent 8133319 pgs. 27 The present invention relates to a production process of a Periodic Table Group 13 (hereinafter simply referred to as Group 13) metal nitride crystal  ...   ...  More » Tags: Production process of periodic table ..., Arita, et al., Yoji Arita, Yoshinori Seki, Takeshi Tahara, Yuzuru Sato, Application number 11 631-394, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 23 views Language: English Diamond Heat Sink In A Laser - Patent 8133320 pgs. 8 NOTICE OF RELATED AND COPENDING APPLICATIONS This application is related to U.S. Pat. No. 6,582,513, which is hereby incorporated by reference, and  ...   ...  More » Tags: Diamond heat sink in a laser, Linares, Robert Linares, Application number 10 925-217, Single-Crystal Oriented-Crystal And E..., Chemistry Of Inorganic Compounds  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 24 views Language: English Epitaxially Coated Silicon Wafer With 110 Orientation And Method For Producing It - Patent 8133318 pgs. 13 S This application claims priority to German application DE 10 2008 026 784.8 filed Jun. 4, 2008, which is herein incorporated by reference... ...   ...  More » Tags: Epitaxially coated silicon wafer with..., Daub, et al., Erich Daub, Hans Oelkrug, Oliver Schmelmer, Application number 12 454-906, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 30 views Language: English Fabrication Of SOI With Gettering Layer - Patent 8128749 pgs. 14 The invention relates to silicon-on-insulator (SOI) wafers and, more particularly, to SOI substrates incorporating a gettering layer.BACKGROUND OF... ...   ...  More » Tags: Fabrication of SOI with gettering layer, Lee, et al., Junedong Lee, Devendra K. Sadana, Dominic J. Schepis, Application number 11 867-235, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 35 views Language: English Method And Apparatus For Producing Large, Single-crystals Of Aluminum Nitride - Patent 8123859 pgs. 21 The present invention relates to the growth of single-crystal Aluminum Nitride (AlN), and more particularly, to relatively large, single-crystal AlN,  ...   ...  More » Tags: Method and apparatus for producing large, single-crystals of aluminum nitride, Schowalter, et al., Leo J. Schowalter, Glen A. Slack, J. Carlos Rojo, Application number 12 841-350, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 22 views Language:  Method For Producing P-type SiC Semiconductor Single Crystal - Patent 8123857 pgs. 8 INCORPORATION BY REFERENCE The disclosure of Japanese Patent Application No. 2008-026554 filed on Feb. 6, 2008 including the specification, drawings  ...   ...  More » Tags: Method for producing p-type SiC semic..., Terashima, et al., Yukio Terashima, Yasuyuki Fujiwara, Application number 12 366-076, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 22 views Language: English Device And Process For Growing Ga-doped Single Silicon Crystals Suitable For Making Solar Cells - Patent 8123855 pgs. 13 This application claims priority to Chinese Patent Application No. 200710058315.1, filed Jul. 15, 2007, the contents of which are hereby... ...   ...  More » Tags: Device and process for growing Ga-dop..., Ren, et al., Bing Yan Ren, Li Ren, Application number 12 168-891, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 21 views Language:  Manufacturing Method Of Semiconductor Device And Substrate Processing Apparatus - Patent 8123858 pgs. 15 BACKGROUND 1. Technical Field The present invention relates to a manufacturing method of a semiconductor device manufacturing the semiconductor... ...   ...  More » Tags: Manufacturing method of semiconductor..., Wang, et al., Jie Wang, Yasuhiro Ogawa, Katsuhiko Yamamoto, Takashi Yokogawa, Application number 11 902-288, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 24 views Language:  Method And Apparatus For Producing Group III Nitride Based Compound Semiconductor - Patent 8123856 pgs. 7 The present invent ion relates to a method and apparatus for producing a group III nitride based compound semiconductor. The present invention... ...   ...  More » Tags: Method and apparatus for producing gr..., Yamazaki, et al., Shiro Yamazaki, Makoto Iwai, Takanao Shimodaira, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Application number 12 225-550, Single-Crystal Oriented-Crystal And E..., Chemical Apparatus And Process Disinf...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 21 views Language:  Method Of Manufacturing A Silicon Carbide Single Crystal - Patent 8118933 pgs. 6 S This application is a national phase application of International Application No. PCT/IB2007/001003, filed Apr. 5, 2007, and claims the priority... ...   ...  More » Tags: Method of manufacturing a silicon car..., Sakamoto, et al., Hidemitsu Sakamoto, Yukio Terashima, Application number 12 296-145, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 25 views Language: English 1234...19Next »