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Sort by: most recent | most downloaded | most viewed Per Page: 152550 «12345...19Next » Technique For Monitoring Dynamic Processes In Metal Lines Of Microstructures - Patent 8118932 pgs. 11 1. Field of the Invention Generally, the present invention relates to the formation of microstructures, such as advanced integrated circuits, and,... ...   ...  More » Tags: Technique for monitoring dynamic proc..., Buschbeck, et al., Joerg Buschbeck, Eckhard Langer, Marco Grafe, Application number 11 420-159, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 6 views Language:  Non-polar III-V Nitride Material And Production Method - Patent 8118934 pgs. 12 The present invention is directed to methods of producing non-polar III nitride materials having both low defects density and low stress, and more... ...   ...  More » Tags: Non-polar III-V nitride material and ..., Wang, Wang Nang Wang, Application number 11 861-747, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 8 views Language: English Crystallization Method, Crystallization Apparatus, Processed Substrate, Thin Film Transistor And Display Apparatus - Patent 8114217 pgs. 40 1. Field of the Invention The present application relates to a technique to manufacture a filed effect transistor at a surface layer part of a... ...   ...  More » Tags: Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display appa..., Jyumonji, et al., Masayuki Jyumonji, Hiroyuki Ogawa, Masakiyo Matsumura, Masato Hiramatsu, Yoshinobu Kimura, Yukio Taniguchi, Tomoya Kato, Application number 12 166-997, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 7 views Language:  2-dimensional Line-defects Controlled Silicon Ingot, Wafer And Epitaxial Wafer, And Manufacturing Process And Apparatus Therefor - Patent 8114215 pgs. 30 The present invention relates to a silicon ingot, a wafer and an epitaxial wafer, and a process and apparatus for manufacturing the same, and in... ...   ...  More » Tags: 2-dimensional line-defects controlled..., wafer and epitaxial wafer, and manufacturing process and apparat..., Song, et al., Do-Won Song, Young-Hun Kim, Eun-Sang Ji, Young-Kyu Choi, Hwa-Jin Jo, Application number 12 256-663, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 9 views Language: English Crucible For A Crystal Pulling Apparatus - Patent 8114218 pgs. 8 1. Field of the Invention The present invention generally relates to apparatus for growing single crystals from a melt. In particular, the present... ...   ...  More » Tags: Crucible for a crystal pulling apparatus, Radkevich, et al., Olexy V. Radkevich, Keith Ritter, Application number 12 202-453, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 6 views Language: English Semiconductor Single Crystal Growth Method Having Improvement In Oxygen Concentration Characteristics - Patent 8114216 pgs. 8 FIELD OFTHE INVENTION The present invention relates to a semiconductor single crystal growth method, which grows a high-quality semiconductor single... ...   ...  More » Tags: Semiconductor single crystal growth m..., Cho, et al., Hyon-Jong Cho, Seung-Ho Shin, Ji-Hun Moon, Hong-Woo Lee, Young-Ho Hong, Application number 12 263-000, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 8 views Language: English Coloured Diamond - Patent 8110041 pgs. 19 This invention relates to a method of producing coloured diamond and more particularly coloured single crystal chemical vapour deposition... ...   ...  More » Tags: Coloured diamond, Twitchen, et al., Daniel James Twitchen, Philip Maurice Martineau, Geoffrey Alan Scarsbrook, Application number 12 416-216, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 9 views Language: English Method For Manufacturing Single Crystal - Patent 8110042 pgs. 17 Thisapplication is a U.S. National Phase Application under 35 USC 371 of International Application PCT/JP2008/058483 filed May 7, 2008.TECHNICAL... ...   ...  More » Tags: Method for manufacturing single crystal, Narushima, et al., Yasuhito Narushima, Shinichi Kawazoe, Fukuo Ogawa, Tsuneaki Tomonaga, Yasuyuki Ohta, Toshimichi Kubota, Shinsuke Nishihara, Application number 12 515-730, Single-Crystal Oriented-Crystal And E..., Chemistry Of Inorganic Compounds  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 5 views Language:  Beam Homogenizer And Laser Irradiation Apparatus And Method Of Manufacturing Semiconductor Device - Patent 8105435 pgs. 20 1. Field of the Invention The present invention relates to a beam homogenizer which homogenizes a beam spot on a surface to-be-irradiated in a... ...   ...  More » Tags: Beam homogenizer and laser irradiatio..., Tanaka, Koichiro Tanaka, Application number 12 549-793, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 10 views Language: English Single Crystal Silicon Wafer For Insulated Gate Bipolar Transistors And Process For Producing The Same - Patent 8105436 pgs. 15 1. Field of the Invention The present invention relates to single crystal silicon wafers for use in the manufacture of insulated gate bipolar... ...   ...  More » Tags: Single crystal silicon wafer for insu..., Umeno, Shigeru Umeno, Application number 12 235-448, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 17 views Language: English Crystal Growth Apparatus And Manufacturing Method Of Group III Nitride Crystal - Patent 8101020 pgs. 227 The present invention relates to a crystal growth apparatus growing a group III nitride crystal and a method of manufacturing a group III nitride... ...   ...  More » Tags: Crystal growth apparatus and manufact..., Sarayama, et al., Seiji Sarayama, Hirokazu Iwata, Akihiro Fuse, Application number 11 546-989, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 6 views Language:  Method For Fabricating A Semiconductor Device And Apparatus For Inspecting A Semiconductor - Patent 8101018 pgs. 31 1. Field of the Invention The present invention relates to a method for fabricating a semiconductor device incorporating a circuit built with... ...   ...  More » Tags: Method for fabricating a semiconducto..., Tagusa, Yasunobu Tagusa, Application number 10 598-488, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 5 views Language:  Method For Producing A Monocrystalline Or Polycrystalline Semiconductor Material - Patent 8101019 pgs. 16 The present application claims priority of German patent application no. 10 2007 061 704.8 "Methodfor Producing a Monocrystalline or Polycrystalline... ...   ...  More » Tags: Method for producing a monocrystallin..., Sahr, et al., Uwe Sahr, Matthias Mueller, Ingo Schwirtlich, Frank-Thomas Lentes, Frank Buellesfeld, Application number 12 334-646, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 14 views Language: English Crystal-growing Furnace System With Emergent Pressure-release Arrangement - Patent 8101022 pgs. 8 1. Field of the Invention The present invention relates to a crystal-growing furnace system, and more particularly, to a crystal-growing furnace... ...   ...  More » Tags: Crystal-growing furnace system with e..., Lew, et al., Shiow-Jeng Lew, Hur-Lon Lin, Application number 12 219-711, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 4 views Language:  Flow Method And Reactor For Manufacturing Nanocrystals - Patent 8101021 pgs. 22 The invention relates to methods of preparing nanocrystals.BACKGROUND Nanocrystals having small diameters can have properties intermediate between... ...   ...  More » Tags: Flow method and reactor for manufactu..., Yen, et al., Brian Yen, Axel Guenther, Klavs F. Jensen, Moungi G. Bawendi, Martin Schmidt, Application number 11 955-774, Single-Crystal Oriented-Crystal And E..., Coating Apparatus, Semiconductor Device Manufacturing: P..., Nanotechnology  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 6 views Language:  Nonplanar Faceplate For A Plasma Processing Chamber - Patent 8097082 pgs. 12 1. Field of the Invention Embodiments of the present invention generally relate to a plasma processing chamber configured to process semiconductor... ...   ...  More » Tags: Nonplanar faceplate for a plasma proc..., Zhou, et al., Jianhua Zhou, Deenesh Padhi, Karthik Janakiraman, Hang Yu, Siu F. Cheng, Yoganand Saripalli, Tersem Summan, Application number 12 110-879, Single-Crystal Oriented-Crystal And E..., Coating Apparatus, Coating Processes  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 5 views Language:  Method Of Cutting Single Crystals - Patent 8097080 pgs. 17 FIELDOF THE INVENTION The invention relates to a method of separating single crystals, e.g., single crystalline plates or wafers or parts thereof. ... ...   ...  More » Tags: Method of cutting single crystals, Hammer, et al., Ralf Hammer, Manfred Jurisch, Application number 12 271-245, Single-Crystal Oriented-Crystal And E..., Stone Working, Abrading  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 5 views Language:  High Pressure Apparatus And Method For Nitride Crystal Growth - Patent 8097081 pgs. 17 The present invention relates generally to techniques for processing materials in supercritical fluids. More specifically, embodiments of the... ...   ...  More » Tags: High pressure apparatus and method fo..., D'Evelyn, Mark P. D'Evelyn, Application number 12 133-364, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 6 views Language: English Method And Apparatus For Fabricating Crack-free Group III Nitride Semiconductor Materials - Patent 8092597 pgs. 13 The present invention relates generally to semiconductor materials and, more particularly, to a method and apparatus for growing Group III nitride... ...   ...  More » Tags: Method and apparatus for fabricating ..., Dmitriev, et al., Vladimir A. Dmitriev, Yuri V. Melnik, Application number 13 011-879, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 6 views Language:  Carbon Ribbon To Be Covered With A Thin Layer Made Of Semiconductor Material And Method For Depositing A Layer Of This Type - Patent 8092594 pgs. 7 This application is a National Phase application of PCT/FR2006/050530, filed on Jun. 7, 2006, which in turn claims the benefit of priority from... ...   ...  More » Tags: Carbon ribbon to be covered with a th..., Belouet, Christian Belouet, Application number 11 920-018, Single-Crystal Oriented-Crystal And E..., Coating Apparatus, Active Solid-State Devices (E.G. Tran...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 9 views Language:  Bulk GaN And AlGaN Single Crystals - Patent 8092596 pgs. 15 The present invention relates generally to semiconductor materials and, more particularly, to bulk single crystals.BACKGROUND OF THE INVENTION Recent  ...   ...  More » Tags: Bulk GaN and AlGaN single crystals, Melnik, et al., Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A Dmitriev, Application number 12 138-487, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 5 views Language:  Self-assembly Of Water-soluble Nanocrystals - Patent 8092595 pgs. 11 The invention relates to a method for making water-soluble nanocrystals, and, more particularly, to a method for making ordered nanocrystal arrays... ...   ...  More » Tags: Self-assembly of water-soluble nanocr..., Fan, et al., Hongyou Fan, C. Jeffrey Brinker, Gabriel P. Lopez, Application number 12 038-037, Single-Crystal Oriented-Crystal And E..., Compositions, Coating Processes  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 6 views Language: English Method And System For Diamond Deposition Using A Liquid-solvent Carbon-tranfser Mechanism - Patent 8088221 pgs. 54 The present invention relates to diamond deposition, and more particularly to relatively low-temperature, relatively low-pressure diamond deposition... ...   ...  More » Tags: Method and system for diamond deposit..., Shapiro, Zalman M. Shapiro, Application number 13 084-521, Single-Crystal Oriented-Crystal And E..., Chemistry Of Inorganic Compounds  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 6 views Language:  Method, System, And Apparatus For The Growth Of On-axis SiC And Similar Semiconductor Materials - Patent 8088222 pgs. 10 The current application is related to the two co-pending application Ser. Nos. 11/626,388 and 11/626,387, both filed Jan. 24, 2007, both owned by... ...   ...  More » Tags: Method, system, and apparatus for the growth of on-ax..., Makarov, et al., Yuri Makarov, Michael Spencer, Application number 11 829-215, Single-Crystal Oriented-Crystal And E...  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 5 views Language: English Deep-eutectic Melt Growth Of Nitride Crystals - Patent 8088220 pgs. 13 The technology disclosed herein relates generally to fabrication of semiconductor single crystals, in particular the growth of nitride semiconductor... ...   ...  More » Tags: Deep-eutectic melt growth of nitride ..., Slack, et al., Glen A. Slack, Sandra B. Schujman, Application number 12 126-334, Single-Crystal Oriented-Crystal And E..., Compositions  ...  More » Categories:Legal › Patents › Crystals And Epitaxy Growth Processes ›  3188617 10 views Language: English «12345...19Next »