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Introduction As Silicon Photonics moves forward_ more practical

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                                Introduction

     As Silicon Photonics moves forward, more practical and sustainability issues
 are emergent. This workshop is to provide a forum for international experts and
 Chinese scientists in this area to present and discuss their forward looking views
 and suggestions. The speakers for the Workshop are by invitation only, but the
 workshop attendance is open.

 Organized by:
  State Key Laboratory of Advanced Optical Communications System and
 Networks, Peking University
Co-sponsored by:
   The Institution of Engineering and Technology (The IET)
   IEEE Photonics Society
Supported by:
   Peking University
   National Natural Science Foundation of China
   The Chinese Optical Society
Sponsors:
   Bronze Sponsor      Huawei Technologies Co.
   Dinner Sponsor      Kotura, Inc.
Conference Advisors:
     Bingkun Zhou, Tsinghua University, China
     Alan E. Willner, University of Southern California, USA
    Qiming Wang, Institute of Semiconductor, CAS, China
Conference Co-Chairs:
     Zhiping (James) Zhou, Peking University, China
     Jurgen Michel, Massachusetts Institute of Technology, USA




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        Workshop on Frontiers in Silicon Photonics Program
                  Jadepalace Hotel Beijing China(北京翠宫饭店)
                 Venue: Multifunction Hall, 2nd Floor (二层多功能厅)

                 8:30-8:50     Opening Remarks
                               Communication Technology Roadmap
                 8:50-9:40
                               Jurgen Michel     Massachusetts Institute of Technology, USA
                               Optical Communication Evolution
                 9:40-10:30
                               Li Zeng   Huawei Technologies Co., China
AM, August 29
                               Tea break and taking a group photo at the entrance of Jadepalace
                 10.30-10:50
Session Chair:                 Hotel
Zhiping Zhou
                               Energy Issues in Silicon Photonics
                 10:50-11:40
                               Tom Koch     Lehigh University, USA
                               Chip-to-Chip Optical Interconnects
                 11:40-12:30
                               Mehdi Asghari     Kotura, Inc., USA
                 12:30-13:30   Lunch (The Gallery Coffee Shop, 2nd Floor 二层画廊咖啡厅)
                               Si MEMS Photonics for Electronics and Photonics Convergence
                 13:30-14:20   on Si CMOS Platform
                               Kazumi Wada       Tokyo University, Japan
                               A Silicon Photonics Platform with Heterogeneous III-V Integration
                 14:20-15:10
                               Wim Bogaerts      Ghent University, Belgium
PM, August 29    15:10-15:30   Tea break
                               Silicon Photonic Devices for on-chip Microsystems
Session Chair:   15:30-16:20
Mehdi Asghari                  Zhiping Zhou     Peking University, China
                               Lotus Surface Structure with ZnO Nanowires for Low Reflection
                 16:20-17:10   High Efficiency Solar Cells
                               Ching Ping Wong Georgia Institute of Technology, USA
                               Reception Dinner
                 17:30-20:00   Speaker: Andrew Richman, Chairman, Kotura Inc.
                               (The Banquet Hall, 3rd Floor 三层大宴会厅)
                               A High Speed 4-Channel Integrated Silicon Photonics WDM Link
                 8:30-9:20     with Hybrid Silicon Lasers
                               Haisheng Rong Intel Corporation, USA
                               Silicon Based On Chip Photonic Quantum Dots and Photonic
                 9:20-10:10    Molecules
AM, August 30                  Kunji Chen Nanjing University, China
                 10:10-10:30   Tea break
Session Chair:
Tom Koch                       Phosphorus and Boron Doping of Silicon Nanocrystals
                 10:30-11:20
                               Deren Yang      Zhejiang University, China
                               Si Nanodot Photonics
                 11:20-12:10
                               Lorenzo Pavesi University of Trento, Italy
                 12:10-13:30   Lunch (The Gallery Coffee Shop, 2nd Floor 二层画廊咖啡厅)
                               Silicon Based Organic/inorganic Optoelectronic Materials and
                 13:30-14:20   Application
                               Wei Huang Nanjing University of Posts and Telecommunications,
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                               China
                               Chemical and Biological Sensing with Photonic Crystal Devices
                 14:20-15:10   Made of Silicon
PM, August 30                  Philippe M. Fauchet University of Rochester, USA
                 15:10-15:30   Tea break
Session Chair:                 Vector Lensing with Metal-Nanoparticle Arrays
Jurgen Michel    15:30-16:20
                               David Citrin  Georgia Institute of Technology, USA
                               Surface Plasmon Assisted Emission Enhancement for Silicon
                 16:20-17:10   Nanocrystals
                               Yidong Huang      Tsinghua University, China
                               CMOS Device Scaling Challenges and Possible Solutions: A
                 17:10-18:00   Personal View
                               Huilong Zhu Institute of Microelectronics CAS, China
                 18:00-18:10   Closing Remarks




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                              Sunday, 29 August, 2010

8:30AM - 8:50AM        Opening Remarks

8:50AM - 9:40AM        Communication Technology Roadmap
                       Jurgen Michel Massachusetts Institute of Technology, USA

Abstract: In 2005, the Communication Technology Roadmap (CTR) I Report correctly noted a
shift in technology from classic telephonic communications infrastructure to data-centric
packet-switched communications. The report also forecast the impending integration of photonic
circuit elements within standard electronics circuits and noted the inability of any single
commercial entity to resolve these issues independently. We will present the findings from the
most recent report, CTR II. In this report, an even greater change in direction is observed as
Information Technology is reaching limits in its ability to scale to greater capacity and
functionality. The emerging barriers to the scaling of information technology are power efficiency,
bandwidth density, and cost. By 2018, the energy utilized by Internet Protocol (IP) traffic is
predicted to exceed 10% of total electrical power generation in developed countries. Parallelism in
computational architecture is the accepted solution to power efficiency of information processing,
but bandwidth density bottlenecks are occurring throughout the interconnection hierarchy from
cloud networks to chip-to-chip interconnects. We will discuss the opportunities for optical data
transmission and photonic integration in telecommunication, computation, imaging, and learning.

                          Biography: Jurgen Michel is a Principal Research Scientist in the
                          Microphotonics Center at the Massachusetts Institute of
                          Technology. He manages and conducts research projects in
                          silicon-based photonic materials and devices and agglomeration issues
                          in silicon processing. Currently, his main focus is on-chip WDM
                          devices, coupling and packaging issues in silicon photonics, and
                          self-assembly of nano dots. In 1990, prior to joining MIT, he was a
                          Postdoctoral Member of the Technical Staff at AT&T Bell Laboratories,
                          studying defect reactions and defect properties in semiconductor
materials. He was educated in Germany and earned his diploma in Physics at the University of
Cologne and his doctorate in Applied Physics at the University of Paderborn. He has authored
more than 130 scientific papers.

9:40AM - 10:30AM        Optical Communication Evolution
                        Li Zeng Huawei Technologies Co., China

Abstract: The presentation introduces the trend of fix communication network, which will be
ultra bandwidth transport, high speed access and large capacity grooming, so the optical
technology will become one of key technologies in the fix communication network, however there
are many challenges to optical technologies application, such as smaller package, lower power,
lower cost. The photonic integrated technologies will meet these requirements.


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                          Biography: Zeng Li received the B. Eng. Degree from Southeast
                          University in 1999. After graduated he joined Huawei technologies, the
                          department of Optical Network, has worked in development, design and
                          architecture of WDM system for over 10 years. Zeng Li is interested in
                          research of high speed transmission and photonic technologies, is
                          currently director for department of photonic-electronic technical research.
                          Zeng Li is doing the 100GE E2E transport research of ―863‖ program in
                          China.

10:30AM - 10:50AM         Tea Break and taking a group photo in the entrance of Jadaplace
                          Hotel

10:50AM - 11:40AM          Energy Issues in Silicon Photonics
                           Tom Koch Lehigh University, USA

Abstract: not available

                          Biography: Thomas L. Koch is a joint Professor in the Electrical and
                          Computer Engineering and Physics Departments at Lehigh University,
                          and holds the Daniel E. '39 and Patricia M. Smith Endowed Chair of
                          Director, Center for Optical Technologies. Dr. Koch previously held
                          Vice President positions at SDL, Lucent, and most recently at Agere
                          Systems, where he was responsible for research and development of the
                          underlying materials and device technologies required to support Agere's
                          optoelectronic and IC product portfolio. Koch received his Bachelor of
                          Arts degree from Princeton University in Physics and his Ph.D. in
Applied Physics from the California Institute of Technology in 1982. Upon joining Bell
Laboratories Research as a member of technical staff in that year, his activities focused on
improving the spectral properties and modulation characteristics of semiconductor lasers used in
high capacity optical fiber communications systems. This included Bell Labs' first
high-performance distributed-feedback (DFB) lasers with record-setting transmission rates, basic
advances in tunable lasers, and later as Department Head, leading the research team that
developed the first generation of semiconductor photonic integrated circuits (PICs). In the
international scientific community Koch has served on numerous conference, technical and
governance committees for the OSA and the IEEE, and has chaired a number of major conferences,
including the Optical Fiber Communications conference (OFC), the IEEE LEOS Annual Meeting,
and the IEEE International Semiconductor Laser Conference. Dr. Koch holds 35 patents and has
authored or co-authored over 300 journal and conference publications, several book chapters, and
was co-editor of the two-volume book, "Optical Fiber Telecommunications III," with Ivan. P.
Kaminow. He has received the Distinguished Lecturer Award and the William Streifer Award for
Scientific Achievement from the IEEE LEOS, and is a Bell Labs Fellow, a Fellow of the OSA and
the IEEE, and a member of the National Academy of Engineering.

11:40AM - 12:30AM          Chip-to-Chip Optical Interconnects
                           Mehdi Asghari Kotura, Inc., USA
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Abstract: In this talk I will review the motivation, key challenges and progresses made in the
field of optical interconnects for High Performance Computing and Data Centers. I will start by
reviewing the driving forces for this technology and the potential benefits it can offer at different
levels within such systems. I will then discuss potential physical implementations of such
solutions in Silicon and report on some of the key progress made by Kotura and its partners in this
area. Before concluding the talk I will briefly reviewing some of the real life challenges that has
and will continue to hamper the commercialization of this promising technology and suggest areas
where key progress is needed.

                      Biography: Dr. Mehdi Asghari has over 15 years of research and product
                      development experience within the silicon photonics industry. Currently
                      Dr. Asghari is the CTO at Kotura Inc, a California based US Company,
                      where he is responsible for technology and product development efforts.
                      Prior to that, Dr. Asghari served as VP of Research and Development at
                      Bookham Inc., where he was responsible for the R&D and manufacturing
                      transfer activities behind all of Bookham's silicon-based technologies and
                      products. Dr. Asghari holds a Ph.D. degree in Optoelectronics from the
                      University of Bath, a M.Sc. degree in Optoelectronics and Laser Devices
from the Heriot-Watt and St. Andrews Universities, and a MA degree in Engineering from
Cambridge University. He has authored or co-authored over 100 Journal and Conference
publications and holds more than 12 patents within the fields of silicon photonics and
optoelectronics.

12:30AM-13:30AM          Lunch (The Gallery Coffee Shop, 2nd Floor 二层画廊咖啡厅)

13:30PM- 14:20PM         Si MEMS Photonics for Electronics and Photonics Convergence on
                         Si CMOS Platform
                         Kazumi Wada Tokyo University, Japan

Abstract: It is clear that wavelength division multiplexing (WDM) on a chip to enable orders of
magnitudes higher performance computing and communication. The biggest challenge is heat
penalty in circuit operation, i.e., on-chip thermal fluctuation leading malfunctioning WDM in
terms of wavelength fluctuation. Thus various attempts have been reported enable on-chip WDM
without huge success. To breakthrough this issue we have proposed Si MEMS photonics to lock
the wavelength in terms of refractive indices and bandgap dependence on strain. The present paper
describes the current status of the Si MEMS photonics and discusses the future prospectives.

                         Biography: Kazumi Wada is Professor of Microphotonics, Materials
                         Engineering, the University of Tokyo. Born 11th of November 1950 and
                         he received the Ph.D. degree in instrumentation engineering from Keio
                         University, Yokohama, Japan. Since joining Research Laboratories,
                         Nippon Telephone and Telegraph (NTT) Tokyo Japan1975, he was
                         engaged in research on defects in Si and III–V materials and devices.
                         Since 1998, he was with the Microphotonics Center, Materials Science
                         and Engineering, Massachusetts Institute of Technology (MIT),
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conducting research on Si photonics. He focused on Ge photodetector and modulator on Si CMOS
platform. He moved back to Japan 2004 to accept professorship at the University of Tokyo,
managing his Microphotonics laboratory for Si CMOS Photonics research. Since 2005 he has been
conducting the creative scientific research on Si CMOS Photonics sponsored by MEXT. Since
2008 he serves the coordinator of JSPS program on Si Photonics research centers in US, EU, and
Japan. Currently his interests are on on-chip light emitters as a missing element of Si CMOS
Photonics and on optical data processing for optical computing. He is a co-proposer of national
project on Photonic and Electronic Convergence System Technology starting 2009 for 5 years. He
has authored and coauthored more than 100 refereed journal papers and have edited 13 books. As
government services, he was the chair of Si Photonics of JEITA, and that of Institute of Electrical,
Information, and Communication Engineers (IEICE) in Japan, Board of Directors of materials
research society (MRS), a co-chair of 4th international conference on Group IV Photonics (IEEE),
and an organizer of SiGe Symposium at Electrochemical Society (ECS). He was an associate
editor of the Japanese Journal of Applied Physics and an associate editor of the IEEE/TMS, and
Journal of Electronic Materials. He is a Japan Society of Applied Physics Fellow.

14:20PM -15:10PM        A Silicon Photonics Platform with Heterogeneous III-V Integration
                        Wim Bogaerts Ghent University, Belgium

Abstract: We will present an overview of the work by Ghent University and imec on a
multipurpose photonic platform based on silicon technology with heterogeneous integration of
III-V materials. Silicon photonics is widely considered to be the most promising technology to
realize a high-performance, low-cost and high-volume photonic platform that can enable complex
VLSI photonic functionality. One of the key enablers for silicon photonics is the possibility
leverage existing silicon processing technology. Silicon as a material is exceptionally suited for
compact passive waveguide circuits, but for light detection, and especially generation, III-V
materials are by far superior. Heterogeneous integration of III-V materials on silicon photonic
circuits has already been demonstrated in working lasers and efficient photodetectors. We will
discuss the recent progress in adhesive III-V-on-silicon bonding technology, with working lasers,
microlasers and different types of photodetectors, and how these devices can be used for different
purposes. III-V integration can only be successful if integrated in a fully functional silicon
photonics platform. III-V materials are typically not used in a silicon process environment. To
accommodate the III-V materials inside a silicon process flow, careful considerations have to be
made for contamination and temperature budget. Imec is constructing a full silicon photonics
platform which not only integrates passive silicon photonics, but also modulators, germanium
photodetectors, thermal tuning, III-V integration and 3-D integration with electronics

                         Biography: Wim Bogaerts received a PhD in 2004 from Ghent
                         University in 2004, on the design and fabrication of nanophotonic
                         components, and especially photonic crystals using silicon technology.
                         He continued to work on the subject of silicon photonics, co-ordinating
                         the activities between the photonics group and the silicon process
                         technology group in IMEC for the fabrication of SOI photonic
                         nanostructures with advanced CMOS tools. This work spurred
                         collaborations with tens of partners all over the world to combine
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nanophotonic designs into multi-project-wafer runs in IMEC, an activity which is now running as
the silicon photonics platform ePIXfab. Currently he is still active in the photonics group as a
postdoctoral researcher of the Flemish Science Foundation (FWO), active in both Ghent
University and imec, coordinating the silicon photonics work, with a strong focus on active
elements (modulators, detectors, tuners) and integration of silicon photonics with other
technologies using 3D integration. He keeps a strong interest in telecommunications, information
technology and applied sciences. He is a member of IEEE-LEOS and the Optical Society of
America (OSA).

15:10PM -15:30PM        Tea Break

15:30PM -16:20PM        Silicon Photonic Devices for on-chip Microsystems
                        Zhiping Zhou Peking University, China

Abstract:Silicon photonics has a potential as a more efficient and lower cost optical solution for
high density data communications in optical fiber system and computer system. It is expected that
a successful monolithic integration of silicon based photonic devices and microelectronic devices
will lead to a more significant "micro optoelectronics revolution" than the well-known
"microelectronics revolution". From this point of view, this talk will present recent development in
silicon based photonic devices and efforts in large scale integration. Along this line, our own
research on silicon photonic devices and their application for on-chip microsystems will also be
presented.

                          Biography: Zhiping (James) Zhou received his Ph.D. (EE) degree from
                          Georgia Institute of Technology (GT), USA, in 1993. He was a Founder
                          and the Vice President of Production at Hengnan Transistor Factory in
                          China (1971-1978) and a guest scientist of NIST in USA (1987-1989).
                          He is a Fellow of SPIE, a senior member of IEEE, a member of OSA,
                          and a life member of PSC. From 1993 to 2005, he was with the
                          Microelectronics Research Center at GT, where he engaged research and
                          development in the areas of semiconductor devices and sensors;
                          photonic devices and sensors; ultra-fast optical communications;
integrated optoelectronics; nanotechnology; and vector rigorous diffraction analysis. From 2005 to
2008, he was with HUST as a ―Changjiang‖ special professorship appointed by the Ministry of
Education of China, focusing on silicon photonics and microsystems research. He is now a
―Changjiang‖ Professor at Peking University, Beijing, China. He is also an Adjunct Professor at
School of Electrical and Computer Engineering of GT, USA. He has over 190 technical papers
and presentations, and holds 9 patents.

16:20PM - 17:10PM        Lotus Surface Structure with ZnO Nanowires for Low Reflection
                         High Efficiency Solar Cells
                         Ching Ping Wong Georgia Institute of Technology, USA

Abstract: Solar energy is green and environmentally friendly energy sources compared to
traditional energy sources (fossil fuels, nuclear, coals, etc.). It is indispensable in energy
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production in spacecrafts and satellites, and is becoming more widely used in microelectronics and
photonics. Optical and electrical losses are primary factors that influence photovoltaic conversion
efficiency. In particular, the optical loss attributed to the reflection loss of the incoming light. By
incorporating a novel nano surface technology with multiple internal reflections, low surface
reflection and high light -absorption are achieved. Therefore the efficiency of photovoltaic devices
can be significantly enhanced. One-dimensional semiconductor nanowires offer the unique
advantages such as large surface area, high optical absorption across a broad spectrum and high
charge collection efficiency. ZnO nanowires, an outstanding member of the family of one
dimensional nano structures, have many applications for fabricating electronic and optoelectronic
devices. ZnO nanowire is an attractive dielectric antireflection coating material for PV
applications due to its high transparency, appropriate refractive index (n = 2), and its capability to
form a textured coating via anisotropic growth. It was reported that ZnO nanowires display the
reflection suppression at broadband wavelengths range, and have been widely used in
dye-sensitized solar cells as well. In our study, we grew ZnO nanowires on a textured Si surface
for superhydrophobic, low light reflection, and high efficiency solar cells. In our study, the
pyramidal silicon structures were made by etching the silicon wafer with KOH, water, and
isopropyl alcohol at elevated temperature. Then ZnO nanowires were grown on the pyramids
using a hydrothermal decomposition method from a ZnO seed layer. This ZnO nanowires
formation process is cost-effective. The superhydrophobicity on the top ZnO nanowire surfaces
was achieved by using perfluorooctyl trichlorosilane. The weight reflectance (WR) was calculated
by normalizing the hemispherical reflectance spectrum (300-1200 nm) measured. It was found
that the ZnO nanowire serves as an antireflective layer similar to a conventional SiN passivation
and such a structure helps further reduce the reflectance. As a result, a weighted global reflectance
of 6.5% was achieved. We further fabricated, characterized and analyzed the screen-printed solar
cells of ZnO nanowires. Then cell performance was characterized by light I-V as well as internal
quantum efficiency (IQE) measurements for the short-wavelength response. The final efficiency of
our nanostructured solar cell device, the experimental details and surface characterization results
are presented in this paper.

                       Biography: Prof. C. P. Wong is currently Dean of the Faculty of
                       Engineering at the Chinese University of Hong Kong. He is on a no pay
                       long leave from Georgia Institute of Technology(GT) where he is a
                       Regents Professor and the Charles Smithgall Institute Endowed Chair at
                       the School of Materials Science and Engineering. Prior to joining GT in
                       1996, he was with AT&T Bell Laboratories for many years and became an
                       AT&T Bell Laboratories Fellow in 1992 .His research interests lie in the
                       fields of polymeric electronic materials, electronic, photonic and MEMS
                       packaging and interconnect, interfacial adhesions, nano-functional
material syntheses and characterizations, nano-composites. He received many awards, among
those, the AT&T Bell Labs Fellow Award in 1992, the IEEE CPMT Society Outstanding Sustained
Technical Contributions Award in 1995, the IEEE Educational Activity Board Outstanding
Education Award in 2001, the IEEE CPMT Society Exceptional Technical Contributions Award in
2002, the Georgia Tech Class 1934 Distinguished Professor Award, the IEEE CPMT Field Award
in 2006 and the IEEE CPMT David Feldman Award in 2009. He holds over 50 U.S. patents, and

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has published over 1,000 technical papers, co-authored and edited 10 books and is a member of
the National Academy of Engineering of the USA since 2000.

17:30PM - 20:00PM        Reception Dinner
                         Speaker: Andrew Richman, Chairman, Kotura Inc.
                         (The Banquet Hall, 3rd Floor 三层大宴会厅)

                          Biography: Dr. Andrew Rickman OBE was the founder and former
                          CEO/Chairman of Bookham Inc, which he grew from a start-up in 1988
                          to the world’s second largest fibre optics telecom component producer. Dr
                          Rickman holds advisory board positions with a number of science and
                          technology organizations and is a director of CLIK, the
                          commercialisation arm of CCLRC Rutherford Appleton Laboratory. He
                          has a wide range of experience in finance and works closely with VC and
                          institutional investors. He is on the Alchemy Partners Board, which
focuses on restructuring established businesses. Dr Rickman is chairman of two early stages,
venture-backed businesses, including Green Biologics, and is also a director of several growing
technology companies. Dr Rickman was awarded an OBE in the Queen’s Millennium Honours list
for services to the telecommunications industry and is a winner of the prestigious Royal Academy
of Engineering Silver medal for his outstanding contribution to British Engineering. Now he is
Chairman of the Board of Directors of Kotura, Inc., the leading provider of silicon photonic
products and in volume production to customers around the world.


                              Monday, 30 August, 2010

8:30AM - 9:20AM        A High Speed 4-Channel Integrated Silicon Photonics WDM Link
                       with Hybrid Silicon Lasers
                       Haisheng Rong Intel Corporation, USA

Abstract: The need for increased IO bandwidth in and around the CPU in many different
computer systems has stimulated the research into optical interconnects for many years. Intel has
been pursuing Silicon Photonics, a technology which creates optical components from a silicon
substrate, as a candidate for these applications and has developed a series of silicon based
photonic building blocks. Here we report on a silicon photonics based WDM link demonstrating
all the key technologies required to create a viable optical link for system integration. This
4-channel CWDM integrated silicon photonics link was designed to operate at a line rate of
10Gbps per channel. When over-clocked to operate at 12.5Gbps per channel, we succeeded in
demonstrating a 50Gbps aggregate bandwidth silicon photonics link.




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                          Biography: Dr. Haisheng Rong is a senior scientist in the Photonics
                          Technology Group of Intel Labs. He has worked in many areas of optical
                          and laser technologies during his career including optical information
                          processing, high-resolution laser spectroscopy, large-scale laser
                          interferometer, and optical communications and interconnects. He has
                          published numerous scientific papers including two in Nature and given
                          over 20 invited and keynote presentations at major international
                          conferences and meetings including SPIE conferences, CLEO, OFC, and
                          IEEE LEOS meetings. He has won various Intel awards including the
highest Intel Achievement Award. In November 2005, he was recognized by Scientific American
as one of the top 50 research leaders in science and technology for his work on development of
silicon Raman lasers. He received his Ph.D. degree from the University of Heidelberg, Germany,
M.S. and B.S. degrees from Nankai University, China. Prior to joining Intel Corporation, he also
held research positions at MIT and Caltech. He is a Senior Member of IEEE.

9:20AM - 10:10AM        Silicon Based On Chip Photonic Quantum Dots and Photonic
                        Molecules
                        Kunji Chen Nanjing University, China

Abstract: Similar to the three dimension (3D) quantization of electric states in semiconductor
quantum dots (QD), in the 3D optical microcavity structures the discretization of photonic states
can also be observed. Based on this concept, the 3D optical microcavity may be termed as
photonic QDs. In this paper we proposed an approach to build Si based 3D optical microcavity, in
which photons were confined by Bragg reflectors in all dimensions instead of the lateral
confinement by using total internal reflection. Size-dependent photonic energy modes were
observed when the lateral size is changed from 4 μm to 1 μm. With decreasing lateral size the
modes shift to higher energies, and the splitting between the modes increases. The observed
discrete optical eigenmodes show a quantitative agreement with numerical calculations based on
model of quantized photonic states in the photonic QDs. Based on two coupled 3D photonic QDs
structure, two main bands of discrete optical eigenmodes which similar to the bonding and
anti-bonding modes in the molecule energy spectrum have been observed. The energy positions of
modes are dependent on the lateral size and the coupling distance. This study could be stimulation
for both basic research and application in photon manipulation of silicon photonics.

                         Biography: Chen Kunji Professor of Nanjing University, Deputy
                         Director of Chinese Physical Society, Jiangsu Province(2002--),
                         Member of Advisory Committee of ―State Key Program for Basic
                         Research of China‖(2006--), Member of International Advisory
                         Committee of International Conference on Amorphous and
                         Nanocrystalline Semiconductors(1996--). 1981--1983 as a visiting
                         scholar at University of Chicago, USA. Research areas:
                         Nano-semiconductor materials, Quantum Nano-electronics and
                         Nano-optoelectronics. Published SCI papers over 200 articles and one
book, owned 8 invention patents. Award: National Nature Science Award ―Ordered、Controllable
Silicon Based Quantum Structures – Architecture Principles and Optoelectronics
                                               13
Characteristics‖(2003), Advanced Achievements Award in Science and Technology of Jiangsu
Province (1988、1995、2002)

10:10AM-10:30AM         Tea break

10:30AM-11:20AM        Phosphorus and Boron Doping of Silicon Nanocrystals
                       Deren Yang Zhejiang University, China

Abstract:Research on silicon (Si) nanocrystals (NCs) is critical to the next-generation Si
technologies for nanoelectronics, optoelectronics and photovoltaics. In the past two decades both
the effect of NC size and that of states introduced by surface defects and impurities on the
properties of Si NCs have been carefully studied. Recently, the focus has shifted to intentional
modification of NC composition as an additional means of improving the properties of Si NCs.
We will introduce recent work on the doping of Si NCs with boron (B) and phosphorus (P). Our ab
initio calculations show that the most probable locations of dopants are actually at the surface of
Si NCs, since the formation energies of B and P are the lowest when they substitute or passivate Si
atoms at the NC surface. This signifies the difficulty of tuning the electrical conductivity of Si
NCs by doping, which inherently requires the incorporation of dopant atoms into the lattice sites
inside Si NCs. Experimental work shows significant loss of P after removing the oxide layer of
oxidized P-doped Si NCs, consistent with the above-mentioned theoretical prediction that P is the
most likely resides at the NC surface. In contrast, the concentration of B increases after the oxide
layer of oxidized B-doped Si NCs is removed. The underlying mechanism is currently investigated.
Our calculations explain the doping-induced changes in the light emission from Si NCs. The
infrared absorption of P-doped Si NCs actually originates from transitions involving
doping-induced deep energy levels, rather than free carriers. We also explain the absence of the
infrared absorption of B-doped Si NCs.

                          Biography: Prof. Dr. Deren Yang is a Cheung Kong Professor in
                          Zhejiang University in China. He is also the director of the State Key
                          Lab of Silicon Materials and the Institute of Semiconductor Materials.
                          He received his Ph. D. degree in 1991 in Zhejiang University, and then
                          worked in Japan, Germany and Sweden for several years as a researcher
                          in 1990’s. In 2002 he won the National Science Fund for Distinguished
                          Young Scholars in China. He has engaged in the research of silicon
                          materials used for microelectronic devices, solar cells and nano-devices.
                          He have authored 8 books as an author or co-authors, and edited 4
proceedings of the international conference. He has published more than 310 research papers in
international journals. He also received 43 patents. In the past, he chaired 6 international
conferences and was appointed as the member of international committee of 21 international
conferences. He also presented more than 20 invited talks in international conferences.

11:20AM-12:10AM         Si Nanodot Photonics
                        Lorenzo Pavesi University of Trento, Italy



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Abstract: Silicon Photonics is no more an emerging field of research and technology but it is a
present reality with commercial products available on the market, where low dimensional silicon
(nanosilicon or nano-Si) can play a fundamental role. After a review of the field, the optical
properties of silicon reduced to nanometric dimensions are introduced. The use of nano-Si, in the
form of Si nanocrystals, in the main building blocks of Silicon Photonics (waveguides, modulators,
sources and detectors) is reviewed and discussed. Recent advances of nano-Si devices such as
waveguides, optical resonators (linear, rings, and disks) are treated. The development of high
efficiency light emitting diodes for interchip bidirectional optical interconnects is presented as9
well as the recent progresses to exploit nano-Si for solar cells. In addition, non-linear optical
effects which enable fast all-optical switches are described.

                          Biography: Lorenzo Pavesi is Professor of Experimental Physics at the
                          University of Trento (Italy). Born the 21st of November 1961, he
                          received his PhD in Physics in 1990 at the Ecole Polytechnique Federale
                          of Lausanne (Switzerland). In 1990 he became Assistant Professor, an
                          Associate Professor in 1999 and Full Professor in 2002 at the University
                          of Trento. He leads the Nanoscience Laboratory (25 people), teaches
                          several classes at the Science Faculty of the University of Trento, and is
                          dean of the PhD School in Physics. He founded the research activity in
                          semiconductor optoelectronics at the University of Trento and started
several laboratories of photonics, growth and advanced treatment of materials. He is director of
the professional master Nano on Micro, coorganized between University and Bruno Kessler
Foundation. He is the president and founder of the IEEE italian chapter on Nanotechnology. He
has directed more than 15 PhD studens and more than 20 Master thesis students. His research
activity concerned the optical properties of semiconductors. During the last years, he concentrated
on Silicon based photonics where he looks for the convergence between photonics and electronics
by using silicon nanostructures. He is interested in active photonics devices which can be
integrated in silicon by using classical waveguides or novel waveguides such as those based on
dynamical photonic crystals. His interests encompass also optical sensors or biosensors and solar
cells. In silicon photonics, he is one of the worldwide recognized experts, he organized several
international conferences, workshops and schools and is a frequently invited speaker. He manages
several research projects, both national and international. He advises EC on photonics and is a
frequently invited reviewer, monitor or referee for photonics projects by several grant agencies.
He is an author or co-author of more than 280 papers, author of several reviews, editor of more
than 10 books, author of 2 books and holds six patents. He is in the editorial board of Research
Letters in Physics and he was in the editorial board of Journal of Nanoscience and
Nanotechnologies, in the directive council of the LENS (Florence), in the Board of Delegates of
E-MRS. He holds an H-number of 36 according to the web of science.

12:10PM - 13:30PM        Lunch (The Gallery Coffee Shop, 2nd Floor 二层画廊咖啡厅)

13:30PM - 14:20PM        Silicon Based Organic/inorganic Optoelectronic Materials and
                         Application
                         Wei Huang Nanjing University of Posts and Telecommunications, China

                                                15
Abstract: In the recent research of organic optoelectronic material developments, more and more
attention has been paid to introduce silicon, which is a widely used element in inorganic
optoelectronics, into the organic molecular systems to modify and improve the desired functional
materials. Silicon-containing π-electron systems are interesting organic functional materials
because of their unique interaction between the π*-orbital of the π-modules and the σ-orbital of
the exocylic silicon-carbon bonds, which effectively tunes the molecular and electronic structures
and properties of the organic materials. In this presentation, I will review the applications of
silicon in the optoelectronic organic systems which are closely related to our work, considering
the future development directions of this important research field. Silanes, silicon-inserted organic
systems, and silicon-substituted π-electron molecules will be briefly introduced and discussed. I
focus on the silicon-bridged π-system, which I think is the best way to introduce silicon atom into
the π-conjugated molecules. I believe the marriage of silicon which is the star element in inorganic
optoelectronics with the π-conjugated organic systems opens a door for both structural and
functional modifications and improvements of the organic molecules, and the forthcoming in
depth investigations on this silicon-containing organic material will eventually put the organic
electronics into reality.

                         Biography: Wei Huang is the deputy president of Nanjing University of
                         Posts and Telecommunications (NUPT) as well as Director-General of
                         Key Laboratory for Organic Electronics & Information Displays
                         (KLOEID). At the same time, working as a professor at Faculty of
                         Science at National University of Singapore.Electroluminescent
                         polymeric Materials; Functional polymeric materials; Plastic electronics;
                         Conjugated polymers for applications in molecular electronics;
                         OLED-based flat-panel displays; Metal-containing polymers for
                         molecular electronics; Nanomaterials and nanotechnology; Applications
of photoelectron spectroscopy; Molecular modeling.

14:20PM - 15:10PM        Chemical and Biological Sensing with Photonic Crystal Devices
                         Made of Silicon
                         Philippe M. Fauchet University of Rochester, USA

Abstract:We report on the development of all-silicon platforms for label-free biosensing. The
biosensors consist of photonic crystal (PhC) microcavities built in either porous silicon [1,2] or
silicon-on-insulator [3-6]. The present devices are functionalized to capture the appropriate targets
with a negligible false positive response. Both the 1-D and 2-D platforms allow for the detection
of minute amounts of biological matter but the 2-D PhC microcavities also make single virus
detection possible [4]. We will discuss the design and fabrication of PhC microcavities, show how
they can work as biosensors and illustrate their performance with multiple examples.




                                                 16
SEM picture (left) and optical picture (right) of a 1-D and 2-D photonic crystal microcavity in
porous silicon and in SOI.
This work was supported by grants from the National Science Foundation and the National
Institutes of Health, with initial support form the Center for Future Health and its sponsors. The
work described in this presentation was performed in collaboration with many researchers,
including but not limited to Selena Chan, Huimin Ouyang, Mindy Lee, Elisa Guillermain,
Sudeshna Pal, and Prof. Benjamin Miller and his group.

                          Biography: Dr. Fauchet is the Chair and a Distinguished Professor in
                          the Department of Electrical and Computer Engineering at the
                          University of Rochester. He holds additional appointments as Professor
                          at the Institute of Optics, in the Departments of Physics and Biomedical
                          Engineering and in the Materials Science program. He is also the
                          founding Director of the University of Rochester’s Energy Research
                          Initiative, which coordinates efforts in renewable energy from large
                          number of research groups from the School of Engineering and Applied
                          Sciences, Chemistry, Physics, and other departments. In 1998, he
founded the Center for Future Health, a multidisciplinary research center where physicians,
medical experts, engineers, scientists, and others work together to develop technologies that can
help people stay healthy in their home. Dr. Fauchet’s group is well known for research in
nanoscience and nanotechnology with silicon with application to photonics, biosensing, and
energy. He has published 400 papers, edited 13 books, and given numerous plenary or invited
presentations at major international conferences. Among his awards, Dr. Fauchet received an IBM
Faculty Development Award, an NSF Presidential Young Investigator Award, an Alfred P. Sloan
Research Fellowship, and the Prix Guibal & Devillez for his work on porous silicon. He is a
Fellow of the Optical Society of America, the American Physical Society, the Institute of
Electrical and Electronic Engineering, and the International Society for Optical Engineering
(SPIE). Dr. Fauchet holds numerous patents and has founded one company (SiMPore). He
received an engineering degree from Faculte Polytechnique de Mons in Belgium in 1978, an MS
in Engineering from Brown University in 1980 and a Ph.D. in Applied Physics from Stanford
University in 1984. He was on the faculty at Stanford University and Princeton University prior to
moving to the University of Rochester in 1990.

15:10PM - 15:30PM        Tea break

15:30PM - 16:20PM       Vector Lensing with Metal-Nanoparticle Arrays
                        David Citrin Georgia Institute of Technology, USA

                                               17
Abstract:Pendry proposed using metal films to achieve negative-index effects—a proposal that
relies on local and macroscopic electrodynamics whereby the metal film is characterized by a
(scalar) index of refraction. In this talk we show how such a view must be abandoned for
nanostructures composed of noble-metal nanoparticles. Due to the strong polarization dependence
of surface-plasmon polaritons in metal nanoparticle chains (1D) and arrays (2D) on dielectric
substrates, such as silicon, different polarizations of an incident optical field suffer different
amplitude and wavefront modulation. This leads to different ―images‖ for spatial Fourier
components of the incident field polarized (principally) parallel or perpendicular to the in-plane
wavevector. We discuss effects due to 1D nanoparticle chains for possible imaging applications
in Si-photonic waveguides and for optical vector beam formation by 2D nanoparticle arrays. In
particular we discuss the use of such structures for the formation of optical vector beams.

                        Biography: David S. Citrin is a Professor in the School of Electrical and
                        Computer Engineering at the Georgia Institute of Technology where his
                        multidisciplinary interests overlap the areas of electrical engineering,
                        physics, and materials science. Areas of special focus include nanoscale
                        science and engineering, plasmonics, photonic crystals and metamaterials,
                        terahertz science and technology, semiconductor devices, chaos
                        communications, nonlinear optics, and ultrafast phenomena. He has been
                        conducting research on the optical and electromagnetic properties of
                        low-dimensional semiconductor structures, materials, and devices for
twenty years. His B.A. is in Physics from Williams College, Massachusetts (1985). He earned
the MS (1987) and PhD (1991) in Physics from the University of Illinois at Urbana-Champaign.
Following the PhD, Citrin was a post-doctoral research fellow at the Max Planck Institute for
Solid State Research, Stuttgart, Germany (1992-1993). From 1993 to 1995 he was Center Fellow
at the Center for Ultrafast Optical Science at the University of Michigan. He was an Assistant
Professor of Physics at Washington State University from 1995 to 2001. During that time, Citrin
was awarded a PRESIDENTIAL EARLY CAREER AWARD FOR SCIENTISTS AND ENGINEERS (PECASE)
and an award under the YOUNG INVESTIGATOR PROGRAM (YIP) of the ONR. In 2005 he was
awarded the FRIEDRICH BESSEL PRIZE by the Alexander von Humboldt Stiftung.

16:20PM - 17:10PM        Surface Plasmon Assisted Emission Enhancement for Silicon
                         Nanocrystals
                         Yidong Huang Tsinghua University, China

Abstract: Silicon nanocrystals show intense visible luminescence at room temperature due to
quantum confinement effect and surface state assisted radiative recombination. Observation of
light amplification in silicon nanocrystals indicates their potential optoelectronic applications.
However, dominating nonradiative recombination induces low internal quantum efficiency (QE).
According to Fermi’s golden rule, large density of states (DOS) can enhance spontaneous
emission (SE), and then improve the internal QE. It is known that the metal surface plasmon (SP)
have been used to enhance the SE of GaN/InGaN quantum wells and ZnO, because specific
dispersion relationship of SP causes a large DOS in the blue or ultra violet (UV) range, near the SP
resonance frequency. Effective enhancement needs that the SP resonance energy coincides with
the light emission energy, which was demonstrated by K. Okamoto et al. Unfortunately, unless
                                                18
silicon quantum dots were with very small size and few surface states, the central emission
energies are usually much lower than the resonance energy of the commonly used metal
surface-plasmon waveguides. In this report, we will discuss a kind of metal-rich cermet to lower
the plasmon energy by doping dielectric into metals. By properly choosing the component of the
cermet, the resonance energy can be engineered to match the central emission energies of
nanostructure silicon. To obtain further larger region enhancement, we proposed doublelayer
surface-plasmon strucutre, which shows potential in developing high efficiency electric pump
silicon based light sources. Besides, the spontaneous emission (SE) enhancement due to SPP band
gap effect on metallic grating was evaluated. Within the range of Silicon nanocrystals (Si-NC)
luminescence (  =1.9eV~1.6eV), the calculated maximum Purcell Factors for Au/Ag/Al-Si3N4

not only Au but also Ag and Al, which SPP resonance frequencies are rather higher, can be
adopted to enhance the SE from Si-NCs.

                          Biography: Yidong Huang was born in Beijing, China. She received the
                          B.S. and Ph.D. degrees in optoelectronics from Tsinghua University,
                          Beijing, China, in 1988 and 1994, respectively. From 1991 to 1993, she
                          was with Arai Laboratories, Tokyo Institute of Technology, Japan, on
                          leave from the Tsinghua University. Her Ph.D. dissertation was mainly
                          concerned with strained quantum well lasers and laser amplifiers. In
                          1994, she joined the Photonic and Wireless Devices Research
                          Laboratories, NEC Corporation, where she was engaged in the research
                          on semiconductor laser diodes for optical-fiber communication and
became an assistant manager in 1998. She received ―Merit Award‖ and ―Contribution Award‖
from NEC Corporation in 1997 and 2003, respectively. She joined the Department of Electronics
Engineering, Tsinghua University in 2003, as a professor, and be appointed by the Changjiang
Project in 2005. She became Vice Chairman of the Department in 2007. She is presently engaged
in research on nano-structure optoelectronics. Professor Huang is a member of the IEEE.

17:10PM - 18:00PM        CMOS Device Scaling Challenges and Possible Solutions: A
                         Personal View
                         Huilong Zhu Institute of Microelectronics CAS, China

Abstract: Introduction of MOSFET scaling over the years is given and today’s challenges,
including the issues of power consumption, process parameter variation, short-channel effect etc.,
are described. The importance of strained Si methods for enhancing MOSFET performance, such
as Dual Stress Liner Technique, Stress Proximate Technique, and Replacement Gate Technique,
are discussed. Particular attention is given to the process variations induced by IC manufacturing.
New device structures, which combine the merits of planar MOSFET and FinFet, are presented and
considered as possible solutions for 16nm CMOS technology and beyond.




                                                19
                            Biography: Professor Huilong Zhu is Chief Scientist of IC Advanced
                            Process R&D Center, the Institute of Microelectronics of Chinese
                            Academy of Sciences, and is responsible for advanced CMOS
                            technology research. Professor Zhu obtained his B.S. in 1982 in physics
                            at the University of Science and Technology of China, Anhui, China,
                            and his Ph.D in 1988 in physics at the Beijing Normal University,
                            Beijing, China. He worked at Argonne National Laboratory in
                            1990-1992, University of Illinois at Urbana-Champaign in 1992-1996,
                            Digital Equipment Corporation in 1996-1998, Intel in 1998-2000, and
IBM in 2000-2009. He joined the Institute of Microelectronics of Chinese Academy of Sciences
in 2009. Professor Zhu is co-inventor of Dual Stress Liner Technique and Stress Proximate
Technique, which have been widely used to enhance CMOS performance. He is also co-inventor
to use recessing gate to enhance stress in the channel of a strained MOSFET, which has been
applied, as a key technique, to advanced high-k metal gate CMOS products. He is one of pioneer
researchers of molecular-dynamics-simulation and theoretical modeling of nano-particle
interaction. He first applied molecular dynamics simulation to study of nano-particle sintering and
discovered super-fast sintering (within a few tens pico-second) and relatively rotating of
nano-particles. He developed a model for Ge and Sb diffusion in Si1-xGex system and, for the
first time, excellent agreement to experimental data was achieved in a large range of Ge fractions
and annealing temperatures. Professor Zhu has 130 issued US patents,more than 100 US pending
patents and over 40 technical papers. He was one of four IBM Corporate Leading Inventors
(2007) and an IBM Master Inventor (2008).

18:00PM - 18:10PM        Closing Remarks




                                                20
21
 Organized by:
  State Key Laboratory of Advanced Optical Communications System and
 Networks, Peking University
Co-sponsored by:
   The Institution of Engineering and Technology (The IET)
   IEEE Photonics Society
Supported by:
   Peking University
   National Natural Science Foundation of China
   The Chinese Optical Society
Sponsors:
   Bronze Sponsor      Huawei Technologies Co.
   Dinner Sponsor      Kotura, Inc.
Conference Advisors:
     Bingkun Zhou, Tsinghua University, China
     Alan E. Willner, University of Southern California, USA
    Qiming Wang, Institute of Semiconductor, CAS, China
Conference Co-Chairs:
     Zhiping (James) Zhou, Peking University, China
     Jurgen Michel, Massachusetts Institute of Technology, USA




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