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Batch 8 Test Matrix

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Batch 8 Test Matrix Powered By Docstoc
					     Process Steps                               Target   Wafer Splits
                                                           I-1,3,5,7,9     I-2,4,8       I-6,10      I-12
                                                                                          M-8       M-1, 6     M-2,4,5,7
 1 Initial Measurement of Wafers (4pt Probe)
   Resistivity
   Crystalline Orientation, Type                               I-1                                    M-1
 2 Pirhana Clean and BOE Dip ~3min                          bare-Si                                 bare-Si
   Ensure Dewet                                             Piranha                                 Piranha
   Nwell Sequence
 3 Initial Thermal Oxidation INIOX.003                     INI0X.003                               INI0X.003
     tox (Mean, Std. Dev)                        1000A
     N
     Film Quality
 4   N-Well Photo [ N-WELL1, 1827]                         NWELL1
     AlignmentGap
     Exposure Time
     Development Time
 5   Hardbake 120C, 30min                                   reclaim
 6   N-Well Implantation 5E12, 150KeV                                                                Nwell
     SIMS Analysis                                                                                  Implant
     Junction Depth, P, Sheet Resistance         3.43u
 7   2 min BOE to Remove Native Oxide                                                                BOE
     Etch Time
 8   Removal of PR                                                                                 PR Strip
     Stripper/Asher/RIE time
 9   Piranha Clean                                                                                  Piranha
10   N-Well Drive In NWDRIVE.003                                                                    Drive In
     tox (Mean, Std. Dev)                        3000A
   Junction Depth, P, Sheet Resistance
11 6 min BOE to Remove Surface Oxide                                                                reclaim
   Etch Time (wait for dewet, bare Si exposed)                                I-2           I-6                    M-2
12 Piranha Clean                                                           bare-Si       bare-Si                 bare-Si
   Active Area Sequence                                                    Piranha       Piranha                 Piranha
13 Pad Oxidation PADOX.003                                               PADOX.003     PADOX.003               PADOX.003
     tox (Mean, Std. Dev)                        300A                    Measure Tox
     Process Steps                              Target   Wafer Splits
                                                          I-1,3,5,7,9     I-2,4,8        I-6,10     I-12
                                                                                          M-8      M-1, 6    M-2,4,5,7
   N                                                                    Refractive N
   Film Quality
14 Nitride Deposition MFCPP.004/NICOM.004                               NICOM.004      NICOM.004
     Nitride Thickness(Mean, Std. Dev)          1000A                   Measure Tni
     N                                                                  NiCOM.004      NICOM.004
     Adhesion to Pad Oxide
     Film Quality                                                                                               Test
15   Active Area Photo [ ACTIVE1, 1813] PR1                              ACTIVE-1      ACTIVE-1               Junction
     AlignmentGap                                                                                              Depth
     Exposure Time                                                                                              and
     Development Time                                                                                       Implantation
16   Hardbake 120C, 3hrs                                                 Hardbake       Hardbake               Profile
17   Nitride Etch CMOSNITR.BCH                                          CMOSNITR       CMOSNITR                  for
     Etch Time                                                          Oxide Stop     OxideStop                  P
     Stop on Oxide                                                                                              Filed
18   Field (P-) Implant Photo [PFIELD1, 1813]                            PFIELD1
     AlignmentGap
     Exposure Time
     Development Time
19   Hardbake 120C, 30min                                                 reclaim
20   Field P- 1.5E13, 70KeV                                                SEM                                Field P-
     SIMS,
21   Removal of PR                                                                     PR Remove              Piranha
     Stripper/Asher/RIE time                                                                                   SIMS
22   Pirhana Clean                                                                      Piranha
23   LOCOS Oxidation [FIELDOX2.003]                                                     LOCOS
     tox (Mean, Std. Dev)
     N
     Film Quality
24   BOE Dip (remove oxide on nitride)                                                    BOE
25   Nitride Hard Mask Etch                                                             SiN Etch
     Etch Time @ 160C                           23min      I-3/M-3
26   Piranha Clean                                         bare-Si                      Piranha
27   BOE Dip (remove PadOxidation)                         Piranha                       BOE
     Process Steps                              Target   Wafer Splits
                                                          I-1,3,5,7,9     I-2,4,8       I-6,10         I-12
                                                                                         M-8          M-1, 6     M-2,4,5,7
28 Sacrificial Oxide KOOI.067                             KOOI.067
     tox (Mean, Std. Dev)                       200A
     N
     Film Quality
29   Threshold Ion Implantation 1.7E12, 30KeV             Threshold
     SIMS
30   Piranha Clean                                         Piranha
31   BOE Dip (remove Sacrificial Oxide)                     SIMS            I-4                         M-6         M-4
     Ensure Dewet                                                        bare-Si        Piranha       bare-Si     bare-Si
     Gate Sequence                                                       Piranha        Piranha       Piranha     Piranha
32   Gate Oxidation GATEOX.067                                          GATE0X.67     GATEOX.067    GATE0X.067   GATE0X.67
     tox (Mean, Std. Dev)                       300A
   N
   Film Quality
33 Polysilicon Deposition (CMOSPOLY.008)                                CMOSPOLY      CMOSPOLY      CMOSPOLY     CMOSPOLY
     PolyThickness (Mean, Std. Dev)             4500A
     Adhesion to Gate Oxide
   Film Quality
34 Polysilicon Doping (PYPREDOP.001)                                     PYREDOP       PYREDOP      PYREDOP      PYREDOP
   Resisitivity of PolySi after Doping
35 Doping Anneal (PYDOPANL.001)                                         PYDOPANL      PYDOPANL      PYDOPANL     PYDOPANL
   Resistivty, Shrinkage
36 Gate Photo [ POLY1]                                                    POLY1         POLY1                     reclaim
   AlignmentGap
   Exposure Time
   Development Time
37 Etch Polysilicon CMOSPOLY.BCH                                        CMOSPOLY      CMOSPOLY
   Etch Time                                                 I-5                                                    M-5
38 Piranha Clean and 3s BOE Dip                            bare-Si      XXXXXXXXX     XXXXXXXX                     bare-Si
   Capacitor Sequence                                     Piranha       SEM Profile   SEM Profile                 Piranha
39 Capacitor Oxide CAPOX.067                             CAPOX.067                                  CAPOX.067    CAPOX.067
     tox (Mean, Std. Dev)                       800A
     N
  Process Steps                          Target   Wafer Splits
                                                   I-1,3,5,7,9   I-2,4,8   I-6,10      I-12
                                                                            M-8       M-1, 6    M-2,4,5,7
   Film Quality
40 Capacitor Polysilicon CMOSPOLY.008             CMOSPOLY                           CMOSPOLY   CMOSPOLY
  PolyThickness (Mean, Std. Dev)         4500A
  Adhesion to Capacitor Oxide
   Film Quality
41 Polysilicon Doping (PYPREDOP.001)              PYREDOP                            PYREDOP    PYREDOP
   Resisitivity of PolySi after Doping
42 Doping Anneal (PYDOPANL.001)                   PYDOPANL                           PYDOPANL   PYDOPANL
   Resistivty, Shrinkage
43 Capacitor Photo [ POLY2 ]                        POLY2                             reclaim    POLY2
   AlignmentGap
   Exposure Time
   Development Time
44 Etch Polysilicon CMOSPOLY.BCH                  CMOSPOLY                                      CMOSPOLY
   Etch Time
45 Piranha Clean and 3s BOE Dip                     Reclaim                                      Reclaim
46 N+ S/D Photo [ N-PLUS1]
   AlignmentGap
   Exposure Time
   Development Time                                                                                M-7
47 Hardbake 120C, 30min                                                                          Piranha
48 N+ S/D Arsenic Implant 160KeV, 5E15                                                           N+ S/D
   SIMS
49 PiranhaClean                                                                                   SIMS
50 S/D Anneal                                                                                    Anneal
   Junction Depth
51 P+ S/D Photo [ P-PLUS1 ]                                                                       SIMS
   AlignmentGap
   Exposure Time                                                             M-8
   Development Time                                                        Piranha
52 P+ S/D Boron Implant 30KeV, 5E15                    I-7                 P+ S/D
   SIMS                                             bare-Si
53 Pirhana Clean and 3s BOE Dip                     Piranha                 SIMS
     Process Steps                     Target   Wafer Splits
                                                 I-1,3,5,7,9   I-2,4,8   I-6,10    I-12
                                                                          M-8     M-1, 6   M-2,4,5,7
54 PSG Deposition CMOS7K.SET                     CMOS7K
     tox (Mean, Std. Dev)              7000A
     N
     Film Quality
55   PSG Densification DENS.003                  DENS.003
     Shrinkage
56   Contact Photo [ CONT 1]                      CONT1
     AlignmentGap
     Exposure Time
     Development Time
57   Etch Polysilicon CMOSCONT.BCH              CMOSCONT
     Etch Time
     Back Side Etch                               Reclaim
58   Removal of PR
59   Piranha Clean
60   Hardbake in 120C for 30min
61   Spin PR on front side
62   Dip off BOE in 6:1
63   Backside Poly2 Etch
     Etch Time
64   Dip off BOE in 6:1
65   Backside Poly1 Etch
     Etch
66   Final dip in BHF for back dewet
67   Removal of PR                                                I-8
68   Piranha Clean                                             bare-Si
69   Piranha Clean and 6s BOE dip                              Piranha
     Metallization Sequence
70   Metallization -1 Al               6000A                   Metal-1
     Deposition Time
     Power
     Aluminum Thickness
71   Metal-1 [ME-1]                                             ME-1
     AlignmentGap
     Process Steps                        Target   Wafer Splits
                                                    I-1,3,5,7,9    I-2,4,8     I-6,10     I-12
                                                                                M-8      M-1, 6   M-2,4,5,7
     Exposure Time
     Development Time
72   Plasma Etch Al                                               Etch Al
     Etch Time
73   Sintering                                                    Sintering
     Time
     Temperature
     Examine Film Quality
74   Testing of N and P Channel devices                           Reclaim
     Voltage
     Current                                            I-9                     I-10                I-11
     Sheet Resistance                                bare-Si                  bare-Si             bare-Si
     Piranha Clean                                   Piranha                  Piranha             Piranha
     Planerization Sequence
75   PECVD Oxidation CMOS2K.set                                               CMOS2K              CMOS2K
     tox (Mean, Std. Dev)                 2000A
   N
   Film Quality
76 SOG CMOSSOG.Linberg                                SOG                       SOG                 SOG
     tox (Mean, Std. Dev)                 5000A
   N                                                                           VIA - 1
   Film Quality
77 ICP EtchBack                                      Reclaim                  EtchBack            EtchBack
   Etch Time                                                                  CMOSOX              CMOSOX
78 PECVD Oxidation CMOS2K.set                                                 Measure             CMOS2K
     tox (Mean, Std. Dev)                 2000A                               Reclaim
   N
   Film Quality
79 VIA Photo VIA1                                                                                  VIA-1
   AlignmentGap
   Exposure Time
   Development Time                                                                       I-12
80 Etch Via                                                                 bare-Si     Etch Via
   Process Steps                 Target   Wafer Splits
                                           I-1,3,5,7,9   I-2,4,8   I-6,10     I-12
                                                                    M-8     M-1, 6      M-2,4,5,7
   Etch Time                                                                Piranha     CMOSOX
81 Metallization -2 Al           8000A                                      Metal-2     Measure
   Deposition Time                                                                       Reclaim
   Power
   Aluminum Thickness
82 Metal-1 [ME-1]                                                            ME-2
   AlignmentGap
   Exposure Time
   Development Time
83 Plasma Etch Al                                                           Etch Al
   Etch Time
84 Sintering                                                                Sintering
   Time
   Temperature
   Examine Film Quality
85 Testing                                                                  Reclaim
   Metal -1 /Metal - 2 Contact
86 Testing
   Device and Structures
       Junction Depth - Implant/DriveIn

BT-2   PadOxide Thickness
       Nitride Hard Mask Thickness
       SiN adhesion to SiO

       Active Litho Parameters
       HardMask Etch/Stop on Oxide
       Pfield Litho Parameters
       Cleaved for SEM Cross Section

BT-3   PadOxide Thickness
       Nitride Hard Mask Thickness
       SiN adhesion to SiO
       Active Litho Parameters
       HardMask Etch/Stop on Oxide
       LOCOS Thickness
       H3P04 Wet SiN Etch
       LOCOS SEM Profile
         Independent Test Wafer Assignment (I-1 - I-12)

Split    # Wafers Process Sequences

   I-1       1     Initial Oxidation     N-Well Litho
   I-2       2     Pad Oxidation         Nitride Hard Mask   Nitride RIE
   I-3       1     Sacrificial Oxide
   I-4       2     Gate Oxidation        1st PolySilicon     Poly Doping Poly Anneal Poly Etch
   I-5       1     Capacitor Oxide       2nd PolySilicon     Poly Doping Poly Anneal Poly Etch
   I-6       1     LOCOS                 Nitride Wet Etch
   I-7       1     PSG Deposition        PSG Densification   PSG Etch
   I-8       2     Metal-1 Deposition    Metal-2 RIE         Sintering
   I-9       2     SOG Deposition
  I-10       2     2nd PSG Deposition    Etch Back Test
  I-11       1     VIA Photo             Via Etch to ME-1
  I-12       2     Metal 2- Deposition   Metal-2 RIE         Sintering




         Monitor Test Wafer Assignment (M-1 - M-8)

Split    # Wafers Process Sequences

  M-1        2     Intiial Oxidation     N-Well Implantation Drive In
  M-2        1     Pad Oxidation         Field Implantation
  M-3        0     Sacrificial Oxide     Threshold Implant
  M-4        1     Gate Oxidation        1st PolySilicon     Poly Doping Poly Anneal
  M-5        1     Capacitor Oxide       2nd PolySilicon     Poly Doping Poly Anneal
  M-6        1     Gate/Cap Sequence
  M-7        2     N+ S/D Implant        Drive In
  M-8        1     P+ S/D Implant

				
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