Gregor_Seminar_FEL

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					Fast position resolution silicon detectors
                 Gregor Kramberger , DESY



  OUTLINE
     •General properties of position sensitive detectors
     •Column Parallel CCD (CPCDD)
     •Monolithic Active Pixel Detectors (CMOS imager)
     •Depleted Field Effect Transistor Detectors (DEPFET)
     •Hybrid Active Pixel Detectors (HAPS)
                Particle tracking                                          Imaging

3.6 eV/pair

                      p+                                                   p+
 up                                       n-Si                                         n-Si
 to 1                 n+                                                   n+
 mm
                                                              Only some photons interact
each particle leaves a track                              U                                      U
 collection time ~ns order
                                                                  dP        x
                                                                      exp        25m (5.9 keV)
                                                                  dx        




                   p+
  up                                  n-Si                     up
  to 1                                                         to 1
  mm               n+                                          mm

                                                     U                                          U
  Signal                                                        Signal
         Position can be determined – center of gravity


                   To obtain good position resolution – high S/N ratio
                                                                        N
Segmentation options:
•low particle (photons) rate – strip detectors
     Read-out channels/detector module: N+M
     When read-out in:
              series: N+M time units
             parallel: bigger of [N,M]                                           M
   Only projections can be obtained.
                                                   Bottom side perpendicular segmentation
                                                   or two detectors (each 1D) can be used!

•high particle (photons) rate – pixel detectors
                                                                               N
       Read-out channels/detector module: NxM
       When read-out in:
                series: NxM time units
               parallel: bigger of [N,M]

    Usually many detector modules are put
      together to cover the image area!                                               M
(silicon is produced in silicon wafer – nowadays already 8” inch)
 15 cm diameter




                          >1m




Slicing the rod in typically
                                                   Detectors diced out of
       300 m slices
                                                       silicon wafers
         (wafers)

                        Similar processing as for microelectronics
                 lithographic steps, etching, implantations, PolySi filling
What do we want from one module?
A large high resolution “picture” as fast and easy as possible!


few 10 cm2                    picture taking rate
               few m                                                     With a lot of
                              (frame rate) up to
                                                                          effort can be
                              few 10 kHz
                                                                            achieved!
              without severe restriction on operating conditions,
              electronics (voltage supply etc) needed

           One of the following requirements can be even more
                   demanding on expense of the others!


  This talk will try to illustrate
 different detector options for                        Many common points: with
 particle tracking at LC and to                        modification same detector
                                                      concepts can be used for both
some extent their ability to be
 exploited for X-ray detection!


       The further discussion will refer only to pixel detectors!
    One can not explain everything -> only the concepts will be presented !
  things specific to tracking at LC (material budget – thinning of the detectors, power consumption,
                                  mechanics, cooling … will be left out)



Division of fast position sensitive detectors with respect to operational principle!
  • Charge Coupled Devices (CP CCD)
           (RAL, Oxford, Liverpool)
  •Active Pixel Sensor (APS)                                                             Different
     - Depleted Field Effect Transistor Detector                                      collaborations
                                                                                     working on LC
           (MPI München, Mainz, Bonn)                                                vertex detector
     - Monolithic Active Pixel Sensors (MAPS, CMOS imager)                            (plots taken
                                                                                       from their
           (IRES Strasbourg, DESY, NIKHEF)                                          presentations)
     - Hybrid Active Pixel Sensors (HAPS)
           (Warshaw, Krakow, Insubria)
         (widely used technology for pixel detectors in HEP)
                       CPCCD - Principles of operation
        p1   p2        p3          metal       CCD is an array of capacitors
oxide                              gates

                                           buried channel CDD
                                           •potential minimum moved from the surface by n+
                                           •collected charge is a combination of drift and diffusion
                                           (drift much faster – high resistive epi-Si)
                                           •p/p+ edge works as a reflection layer
                                           •MOS gate is superimposed on top of the n+ layer
                                           •the depleted region is controlled by the voltage applied
                                           to the electrodes (p1,p2,p3)


                                           U                                                V
                                                              dep.       p        p+
                                                                         (epi)   (bulk)

        p1        p2        p3

              p+ implants                      PNP CDD
                                               •Instead of MOS a p-n-p structure is formed
         Fully depleted     n-   bulk          •Larger volume can be depleted and by that higher
                                               photon detection efficiency at larger energies
                                               ( used for XMM – Newton )
                            p+
                                   CPCCD - Readout




Asymmetrical
n+ doping




   Only one direction of charge transfer possible   both direction of charge transfer possible
       V




                                                    p1

                                        p1          p2
                sine clocks
                                        p2          p3
                                                                     Typical frequency 5 MHz

                                                                        Classical CCD: slow –
                                                                        not appropriate for high
                                                                        frame read-out rates
  reset




                                  One can use higher frequency in
                                  horizontal shift register – some
                                  gain in speed, but not enough!
Source follower
(1st stage of amplification)
2nd stage amplification follows                                            “Classic CCD”
                                                                       Readout time=NxM/out

                                                                     different frequencies can be used in
                      Different solution is needed!                  horizontal shift register
TESLA VXD – requires 50 s read-out/frame in layer 1 – huge challenge !
read-out of column with ~2500 pixels (10x1.3 cm2) in 50 s (20 kHz frame rate)
    1st layer ladder read-out

         CCD VXD




                                                                              650 20 m pixels
         read-out

1.3 cm



                        2500 20 m pixels      2500 20 m pixels
  S=13   cm2
                                            10 cm


                          Fast readout speed only with Column parallel readout new
                          design – first in the world !
                          • Serial register omitted
                          • 50 Mpixels/sec from each column
                          • Image section clocked at high frequency
“Column Parallel CCD”
 Readout time=N/out      • Each column has its own ADC/amplifier   (compare to classic CCD)
Fast CPCCD – considerations
•   imagine feeding large capacitance (2-3 nF/cm2) at 50MHz:
    •    Low resistivity gates are required - Polysilicon gates replaced by metallized gates (30%
         variation in clock amplitudes over CCD - simulations)
    •    Low voltage clocks up to max. 3 V amplitude - to reduce the power heating
•   high resistive epi-Si to have large area depleted and therefore fast collection
•   well capacity ~ 20000 e
•   n+ implant design to enhance charge transfer between cells
    +some other things ……



                                                                         Two phase, 50 MHz design
                                                                         pixel size 20 μm  20 μm;
       Metallized gates + field enhance   PolySi gates + field enhance
       implant                            implant


                                                                            World’s 1st CPCCD
                                                                             prototype fully
                                                                              designed and
         Metallized gates                  PolySi gates
                                                                            operational at 50
                                                                                  MHz
    SF          DC          wire bonds
Source follower
( needs reset )
      or
                                                          Wire/bump bond
Direct Coupling ?                                         pads                    Charge          Voltage
                                                                                  Amplifiers DC   Amplifiers SF


Read-out chip (CPR-1 chip, 0.25 mm CMOS, 50 MHz)

    Both charge and Voltage amplifier for DC or SF coupling
                                                                                  250 5-bit flash ADCs
    5 bit flash ADC
    buffer FIFO                                                 Wire/bump bond
                                                                 pads                        FIFO
Next iterations will have also:
Gain eq. between columns, CDS, clustering ,data sparsification
Problem of CCDs

Charge collection efficiency (generated charge clocked through the detector)


      Q  Q0 (1  CTI )           n       CTI denotes the loss of charge when
                                            shifted from one cell to another
       TRAPS  - imperfections in Si crystal (capture charge during transfer)
               radiation induced – radiation damage

     Charge losses must be very small: CTI~0.0001 with n=2000 Q/Q0=82%


 How to reduce CTI:
 •2-phase CCD (smaller V)
 •notch CCD –additional implant
      (smaller V Q sees less traps)
 •fast CCD
      (Q has no time to get trapped) – implementation field enhanced implants
 •pre-injection of dark current to fill the traps
 •proper operational temperature
   CPCCD - Prototype performance

Previous prototype – off-shell 3 phase CCD driven at 50 MHz
               at –70 with pp 3V amplitudes




           55Fe   spectrum

             2.8 ADC
Pros CP-CCD
•Proven technology – a lot of experience

•with low resistive epi-Si or PNP-CCD large effective thickness can be reached – good for
imaging

•large homogeneity of charge collection

•small pixel sizes of order (20x20 m2) – good spatial resolution < 5 m


Cons CP-CCD
•High costs and limited vendor choice ( only MTech is working on them )
•Radiation hardness is questionable (charge transfer over entire detector – CTI degradation)
•detectors may need to be operated at lower temperatures
             MAPS (CMOS imager)- principles of operation

                                                                              -no HV
                                                                              -operation voltage set
                                                                              by CMOS process



                    fill factor = 100%



                                                               through the center of N well
                                                               through the center of P well


• double-well CMOS process with epitaxial layer
• the charge generated by the impinging particle is reflected by the potential barriers due to
doping differences and collected by thermal diffusion by the n-well/p-epi diode
     •large charge spreading (signal shared over many pixels)
     •“slow” charge collection (t~100 ns – depends on epi-Si)
• integration of the circuitry electronics on the same sensor substrate (1st stage of amplification)
•useable for detection off photons with few keV (limit set by epi-layer thickness)
Relaxation of excess charge after particle passage

   Particle track

0 nsec
                                                     0 nsec




1 nsec                                               1 nsec




10 nsec
                                                    10 nsec




                                                    20 nsec
20 nsec
          If r of the substrate is high significant contribution of
            diffused charge from substrate to the total charge
                     MAPS - Readout




Reset          Collection
(common row)   (int. time=frame rate)   Output   Reset…




   M2 gate
   potential
                                                               Current prototype’s
                                                               clock speed 40 MHz



                                                                At present prototypes only reset and
                                                                clock signals are needed

                                                               Last amplification stage common to all


                                                                   Full analog information
                                                                   (all pixel) is read-out in
                                                                   series - slow




Simple readout scheme for the first
prototypes (5 up to now)
•a reset cycle (all pixels) – common row reset
•cell output is amplified - physical signal: two frames are read-out and subtracted – CDS
CDS : get rid of FPN, reset noise, 1/f noise




                        Signal/Noise ratio

                        for given event
“Large” pixel size and deep submicron technology -> integration of high chip functionality

                           MIMOSA 6 (being manufactured)
                           • pixel pitch 28x28 m2
       Chip layout         • 1 array 30x128 pixels – 29 transistors/pixel – instead of 3
                            New features:
                           • columns read-out in parallel - max. clock freq.: 30 MHz (CP)
                           • Also 2nd stage amplification and CDS done on-pixel!
                           • ADC conversion done at the edge of columns
                           • data sparsification integrated at the edge off the chip – zero
                           suppression

                                    AC coupling
                                     capacitor

        CP read out

                                    Single pixel
                                    layout

                                     Charge
  6 clock cycles for row             storage
                                    capacitors
 1st layer ladder read-out
                         optimistic        Column read-out

      ~5-8 clock cycles                              pixels
      will be needed for
        processing the
    signal for each pixels
                                         Analog and digital electronics
       in each column

                                           10 cm

                                         Analog and digital electronics
R/O parallel to the short side
of the detector: for TESLA ~                       Column read-out
200 pixel (0.5 cm)/50s
                                 ~1 cm               pixels


                    less optimistic
                                         Analog and digital electronics
                MAPS – prototype performance
  5 prototypes build so far in different technologies (deep sub ), different pixel sizes,
                        clock frequencies and epilayer thicknesses
MIMOSA 5 – large size detector - standard 0.6 m CMOS of AMS with 14 m thick
EPI layer (1014 cm-3), pixel 17x17 m2, well capacity > 10000 e



                                                                              chip size
                                                                              1.73x1.73 cm2



                                                                    Wafer view
                                                                    max. CMOS die size 2x2 cm2
                             ~10% of the total surface
                                                             Pixel read-out direction
    •First stitched ladders of few neighboring chips are produced (100 m between chips – can
    be reduced to 1 m – almost no dead area)
    • simple serial frame read-out – 150 Hz frame rate (full analog information read-out)
    • problem with fabrication yield!
              55Fe   calibration




                        1 diode – 14.6 V/e-
MIMOSA I CMOS 0.6 m
                        ENC = 14 e- @1.6 ms f. rate
                        1 diode rad. tol.– 22.9 V/e-
IMOSA II CMOS 0.35 m
                        ENC = 12 e- @0.8 ms f. rate
Large scale prototype test in pion beam
                        To large extent leakage current contribution
                  (shorter frame rate should reduce noise to around 10e)

                                    T=0oC
Pros MAPS
•low cost (production of 6 6” wafers for example 44000 Euros, 9 USD/cm2 is expected)

•standard CMOS process – profiting from huge progress in microelectronic industry: convenient way of
design - standard software tools, design kits and libraries, high yield, low power consumption

•Radiation hardness – up to few 100 kRad less than 10% degradation in collected charge

•low noise due to small gate capacitance (few fF) – theoretically few e - few 10 e

•signal processing (1st and 2nd stage amplification) in each individual pixel is possible -> good S/N at
high speed

•homogeneity of charge collection >97%

•pixel sizes of order (25x25 m2) – could be limited by integration of large number of transistors

Cons MAPS
•limited epi-layer thickness and by that usability for detection of photons (deep sub  maybe no epi)
•requirement for 8 metal layers and also analog design rules for CMOS – not very easily found
•potential danger of very deep sub-micron technology (trench isolation – charge trapping)
                   DEPFET - Principles of operation




•p-channel JFET or MOSFET integrated on high-ohmic, sidewards-depleted, n-substrate
•a local potential minimum is formed by S/D potentials aided by a deep n implantation
     (punch-through bias of the pixels)
• electrons are collected in an internal gate close to the surface (collection time few ns)
• the transistor channel current is modulated by charge collected in the internal gate
• the device can be switched on/off by an external (top) gate
pulsed clear: pixel dead time < 1% of   Internal gate fills up with:
measuring time                          •signal charges
                                        •thermally generated charges (leakage
                                        current)
                                                   DEPFET - Readout
       gate                DEPFET- matrix                       reset
                    off                               off
                                                                                                                  Current of pixel i,j
                    on                               reset

                                                                            sample Iped+Isig        sample Iped
                    off                               off


                                                                                                                    Reset row i
                                             nxm
                                             pixel
                    off                               off




             VGATE, ON    IDRAIN                      VCLEAR, ON                                                    Gate row i
    VGATE, OFF                                                VCLEAR, OFF
                                            drain      VCLEAR-Control
                                   0 suppression


         output
                                                                       random access to pixels !

DEPFET Column parallel read-out mechanism:                                                        Now: 20 s – 50 kHz
•switch on one row through gate contacts and take                                                 TESLA: 20 ns – 50 MHz
         pedestal current + signal current                                                        a very ambitious but
•reset the row                                                                                    achievable goal
•switch row on again and take pedestal current                                                 Electronics requirement
•subtract the signal-pedestal                                                                  •Current read-out (@ drain)
•repeat for all rows                                                                           •Current memory cells
•do CDS
Using different readout scheme the frame read-out time can be reduced to as low as
10 s (100 kHz frame rate)

                                               Drawback is larger power consumption:




                                                                         current prototype
                                                                           development:
                                                                          128x128 pixels
                                                                          array clocked at
                                                                              50 MHz


                     expected noise < 100 e (at root temperature) with
                     resolution of < 5m
                       DEPFET – prototype performance

     DEPFET’s field of use – beside tracking in particle physics:
     •low energy X ray astronomy XEUS (0.1-30 keV sensitivity)
     •Medical imaging (autoradiography) - BIOSCOPE (64x64 pixel array of 50x50 m2)

                                      55Fe   (6 keV) - 37 lp/mm ~ 6.7 m
single pixel device ENC=4-5 e                                                6  threshold
matrix – 69 e (35oC)
                                      109Cd   (22 keV) - 57 lp/mm ~ 4.3 m
1 kHz frame rate - 50 kHz line




                                     75 m tungsten plate
                                     Imaged with sources

                                                                             projections
Real time – space and energy resolution!
  (different markers can be separated)
Pros DEPFET
•low noise due to small gate capacitance (few 10 fF) – theoretically few e

•external amplification only in the 2. stage what leads to good signal/noise

•the thickness of the substrate can be large - higher efficiency for photons!

•Homogeneity of charge collection >95% (achieved with prototypes so far)

•pixel sizes of order (25x25 m2)

•Non-linearities < 0.1% within large dynamic range

•Radiation hard (deep submicron technology, rad-hard design rules) ?????


Drawback

•High cost (8 implantations, 15 masks, 200 technological steps)
•less flexible – not suitable for any vendor
                 HAPS - Principles of operation
                       All major HEP experiments concept
                At LHC MHz frame rate – with noise around 200 e

                                      •fast read-out (charge collection times of ns order)
         chip                         •each pixel has its own read-out amplifier
                                      •Detection of low-energy photons from the back –
                                      large thickness – up to 1 mm - can be depleted
                         Charge
                        sensitive     •The read-out chip is mounted directly on top of the
                      preamplifiers
                                      pixels (bump-bonding)
                                      Problem is in assembly of pixel detector-hybrid:
                                      bump bonding – alignment
          p+
                                      This limits the pixel detector resolution – minimal
sensor                                bump-bondable size – pixel area limited by the read-
         n-                           out chip!
                                      Large pixel capacitance – higher noise
          n+
                                      BUT…, no limit on read-out chip design
                                      •possible to detect few keV photons from the back
                               Pixel detector with interleaved pixels
                         Interleaved pixel      Polyresistor
Readout pixel
                                                                 readout pitch = n x pixel pitch



                                                               Large enough to          Small enough
                                                               house the VLSI          for an effective
p+
                                                                front-end cell           sampling and
                                                                                         good spatial
n
                                                                                          resolution
     Charge carriers generated underneath one of the interleaved pixel cells induce a signal on the capacitively
     coupled read-out pixels, leading to a spatial accuracy improvement by a proper signal interpolation.

                                  Silicon On Insulator (SOI) detector
     Detector: conventional p+-n, DC-coupled: Electronics: conventional bulk MOS technology

                                                                  Detector  handle wafer
                                                                          – High resistive
                                                                          – 300 m thick            SUCIMA
                           INSULATOR
                                                                  Electronics  active layer
                                                                          – Low resistive
                                                                          – 1.5 m thick
                       HAPS - Prototype performance
                                                        The read-out pixels were wire bonded to
                                                              the readout electronics chip.

                                                         The BELLE experiment amplifiers and
                                                              readout chain were used


                                                880 nm laser used to determine CCE
                                                <80 m spot size – scan performed with 2D stage



 cell size = 100 m
60 m                                         Interleaved

                                              Readout




         Max charge loss ~ 40%
In good agreement with estimated values for
            capacitive network
                                                                      Resolution between 3-10 m
Pros HAPS
•Proven technology – a lot of experience

•Very fast - up to few MHz frame rate

•good homogeneity of charge collection

•no problems with radiation hardness (can sustain 3 orders of magnitude larger doses than others)

•large thickness can be depleted – good efficiency for photons

•Independent design of the read-out chip



Cons HAPS
•High cost (ATLAS and CMS estimation)
•Complicated assembly – alignment of hybrids and detectors
•higher noise (large pixel capacitance)
                        SUMMARY


   There is a bright future for silicon in the field of particle
                           detectors!

With new ideas coming and microelectronics industry growing
                    … sky is the limit

				
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posted:10/2/2011
language:English
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