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Preliminary
HP Power Process V1
GaAs PHEMT Foundry Service
GaAs PHEMT Foundry Service
Introduction
M/A-COM’s high performance HP Power Process is based on a Pseudomorphic High Electron Mobility Transistor
(PHEMT) epitaxial structure which incorporates patented InGaP etch-stop technology. This highly refined material
configuration results in superior device consistency and ease of manufacture. The unique electron transport charac-
teristics of our 0.5 µm gate length PHEMT power process enables realization of power transistors which are ideal
for high power, high gain, and high efficiency amplifiers.
Performance Summary
• Ft = 20 GHz, at Vds = 6V, Id = 75% Idss • F = 14 GHz, W = 500 µm, Vds = 7V, Ids = 48
• Peak Ft ~ 33 GHz mA:
• F = 14 GHz, W = 500 µm, Vds = 5V: Pout @ 1 dBc = 575 mW/mm, PAE = 44.9 %,
Pout = 22.5 dBm, PAE =52 %, Asso. Gain = 8.6 dB Asso. Gain = 6.6 dB
Process Feature Summary Applications
• High efficiency power amplifiers and driver am-
Idss 250 mA/mm
plifiers for applications up to 16 GHz
Imax 525 mA/mm • Low loss switches and LNAs for wireless, and
infrastructure applications
Vp - 1.0 V
gm (@3V,1/2 Idss) 290 mS/mm
InGaP Etch Stop
BVgd(@ 1 mA/mm) 12 V
Gate
MIM Capacitor 400 or 120 pF/mm2 Source Drain
Substrate Thickness 4 mil
Pad Size 75 µm
Total Mask Number 13 n+ GaAs
Metal Number 3 n GaAs
n AlGaAs
Optional Process Feature
i InGaAs
Air-bridge Crossovers Yes
NiCr Resistor 50 Ω/ٱ Superlattice
Via 50 µm GaAs buffer
BCB Protection Layer Yes
HP PHEMT
Epitaxial Layer Structure
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) North America: Tel. (800) 366-2266
or information contained herein without notice. M/A-COM makes no warranty, Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
representation or guarantee regarding the suitability of its products for any
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
HP Power Process V1
GaAs PHEMT Foundry Service
GaAs PHEMT Foundry Service
Metal 3
Metal 2
Metal 1
VIA Hole
D-FET NiCr Resistor Capacitor
HP Process Device Feature Cross Section
Arrhenius plot for HP process
8
10 o
227 C
o
181 C
o
144 C
o
112 C o
84 C
Median time to failure (t )
50
7
10
6
10
5
10
4
10
1000
0.0018 0.002 0.0022 0.0024 0.0026 0.0028
1/T (K)
ch
MTTF vs. Temperature
Tch = 250 oC at Life Test
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) North America: Tel. (800) 366-2266
or information contained herein without notice. M/A-COM makes no warranty, Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
representation or guarantee regarding the suitability of its products for any
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
HP Power Process V1
GaAs PHEMT Foundry Service
GaAs PHEMT Foundry Service
DC IV Curves
1.1544e+01
2X100 µm FET
1.5521e+01 +5.5846e 02 8.6217e 01 +1.0740e 01 7.9642e 01 +1.1200e+00
120.0
1.00
100.0
DC Drain Current (mA)
.80
.60
.40
80.0
.20
60.0 .00
- 30 oC
-.20
40.0
-.40
20.0
-.60
.0 -1.20
.0 1.0 2.0 3.0 4.0 5.0 6.0
DC Drain Voltage (volts)
120.0
1.00
100.0
DC Drain Current (mA)
.80
.60
80.0
.40
.20
60.0
.00 + 27 oC
40.0 -.20
-.40
20.0
-.60
.0 -1.20
.0 1.0 2.0 3.0 4.0 5.0 6.0
DC Drain Voltage (volts)
120.0
100.0
DC Drain Current (mA)
1.00
.80
80.0 .60
.40
60.0 .20
+ 85 oC
.00
40.0
-.20
-.40
20.0
-.60
-.80
.0 -1.40
.0 1.0 2.0 3.0 4.0 5.0 6.0
DC Drain Voltage (volts)
M/A-COM Inc. and its affiliates reserve North America: Tel.
the right to make changes to the product(s) (800) 366-2266
or information contained herein without notice. M/A-COM makes no warranty, Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
HP Power Process V1
GaAs PHEMT Foundry Service
GaAs PHEMT Foundry Service
14 GHz Load Pull: Pout, Gain , PAE vs. Pin
HP Process, 4 X 125 um, Vds=5V, Ids=48 mA
30 60
Pout (dBm), Gain (dB)
25 50
20 Pout 40
15 30
PAE
PAE (%)
Gain
10 20
5 10
0 0
-5 0 5 10 15 20
Pin (dBm)
14 GHz Load Pull Results at 5V:
Pout = 22.5 dBm, PAE = 52 %, Asso. Gain = 8.6 dB
14 GHz Load Pull: Pout, Gain vs. Pin
HP Process, 500 um, Vd=3.5, 5, 7V, Id=50 mA
35
30
Pout (dBm), Gain (dB)
25 7V
5V
20 Pout 3.5V
15
Gain
10
7V
5 5V
3.5V
0
-10 -5 0 5 10 15 20
Pin (dBm)
14 GHz Load Pull Results at 3.5, 5, 7 V
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) North America: Tel. (800) 366-2266
or information contained herein without notice. M/A-COM makes no warranty, Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
representation or guarantee regarding the suitability of its products for any
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
HP Power Process V1
GaAs PHEMT Foundry Service
GaAs PHEMT Foundry Service
Benefits of Using M/A-COM as a Foundry Service:
• Over 17 years of GaAs MMIC production experience
• A complete offering of stable and mature GaAs production processes for commercial handset,
infrastructure, and military applications
• Superior device performance to meet the most stringent specifications
• World-class testing and modeling capabilities
• Shortest production cycle time in the industry
• Proven manufacturer of microwave components and systems for more than 50 years
M/A-COM Foundry Services Include:
• Support in:
• Layout
• DRC and LVS checking
• Technical consultation
• Provide design kit including transistor models and passive models to assist design
Upon Request, Services Available to Foundry Customer:
• Extract small signal, noise, and large signal models
• Provide transistor characterization data in:
• Small signal measurements
• Load pull measurements
• Perform circuit test at:
• Wafer level
• Package level
• Production qualification testing
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) North America: Tel. (800) 366-2266
or information contained herein without notice. M/A-COM makes no warranty, Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
representation or guarantee regarding the suitability of its products for any
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
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