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GaAs MESFET Foundry Service MSAG™ Process 5 V1
GaAs MESFET Foundry Service
Introduction
M/A-COM’s high performance MSAGTM Process 5 is an advanced microwave process that offers not only ex-
cellent performance, but also unparalleled multifunctional capabilities. Based on a self-aligned implant device
structure incorporating patented refractory gate technology, this process offers a family of MESFETs, each sepa-
rately optimized for low noise, high efficiency power, switching, or logic applications. The planar device struc-
ture results in excellent device uniformity, ease of manufacture, and outstanding reliability. Combined with a full
suite of passive elements and through-wafer via holes, this process is ideally suited for both complex multifunc-
tion MMICs and high performance single function MMICs.
Performance Summary Applications
• Power: For a 625 µm FET at 14.5 GHz • High power amplifiers
Pout = 27.0 dBm, Asso. Gain = 8.0 dB, PAE = 59 % • Low noise amplifiers
(Vds = 10 V) • Oscillators
• Switching: Ron = 2 Ω·mm; • Phase Shifters
Coff = 0.25 pF/mm • Switches
• Low Noise: 300 µm FET at 18 GHz • On-chip control logic
Noise Figure = 1.4 dB, Gain = 8 dB (Vds =3V)
• Digital: Switch Driver
Pdiss < 8 mW, Speed-Power Product < 15 fj
(FI/FO=1/1, Vss = =2 V)
Process Feature Summary
Microwave FETs Digital FETs
Parameter D-mode E-mode
Parameter Power Switching Low Noise Idss (mA/mm) 40 60
FET FET FET
Imax (mA/ 460 - - Vt (V) -0.39 +0.2
mm)
Idss (mA/mm) 360 255 225 Passive Elements
Ron (Ω·mm) 2.1 2.2 3.0 Resistors
GaAs 150 Ω/ٱ
Vt (V) -2.75 -2.65 -1.12 Thin Film 10.8 Ω/ٱ
BVgdo (V) 19 12.5 6 MIM Capacitor 300 pF/mm2
30
Other
Ileak (µA/ - -
mm) Substrate Thickness 3 or 5 mil
Ft (GHz) 14.3 18.5 33 Pad Size 75 µm
Mask Layers 11-17
Metal Levels 2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) North America: Tel. (800) 366-2266
or information contained herein without notice. M/A-COM makes no warranty, Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
GaAs MESFET Foundry Service MSAG™ Process 5 V1
GaAs MESFET Foundry Service
MSAGTM Process 5 MESFET Structures
A s y m m e tric M W F E T
G o ld G o ld
P la tin g P la tin g
S iN
G a te
S o u rc e D ra in
n+ n+
p
S y m m e tric M W F E T
G o ld G o ld
P la tin g P la tin g
S iN
G a te
S o u rc e D r a in
n+ n+
p
D ig it a l F E T
G o ld
P la tin g
S iN
G a te
S o u rc e D r a in
n+ n+
p
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) North America: Tel. (800) 366-2266
or information contained herein without notice. M/A-COM makes no warranty, Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
GaAs MESFET Foundry Service MSAG™ Process 5 V1
GaAs MESFET Foundry Service
DC IV Curves
450
400
350
300
Ids (mA/mm) 250
200 Power
150 FET
100
50
0
0 1 2 3 4 5 6 7 8 9
Vds (volts)
450
400
350
300
Ids (mA/mm)
250
200 Switching
150 FET
100
50
0
0 1 2 3 4 5 6 7 8 9
Vds (volts)
250
200
Ids (mA/mm)
150
Low Noise
100
FET
50
0
0 0.5 1 1.5 2 2.5 3 3.5
Vds (volts)
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) North America: Tel. (800) 366-2266
or information contained herein without notice. M/A-COM makes no warranty, Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
GaAs MESFET Foundry Service MSAG™ Process 5 V1
GaAs MESFET Foundry Service
Benefits of Using M/A-COM Foundry Services:
• Over 17 years of GaAs MMIC production experience
• A wide variety of stable and mature GaAs production processes for commercial handset, infra-
structure, and military applications
• Superior device performance to meet the most stringent specifications
• World-class testing and modeling capabilities
• Shortest production cycle time in the industry
• Proven manufacturer of microwave components and systems for more than 50 years
M/A-COM Foundry Services Include:
• Support in:
• Layout
• DRC and LVS checking
• Technical consultation
• Provide transistor models and inductor models to assist design
Upon Request, Services Available to Foundry Customer:
• Extract small signal, noise, and large signal models
• Provide transistor characterization data in:
• Small signal measurements
• Load pull measurements
• Perform circuit test at:
• Wafer level
• Package level
• Production qualification testing
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) North America: Tel. (800) 366-2266
or information contained herein without notice. M/A-COM makes no warranty, Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
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