LNAs for ACTIVE ANTENNAS

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					                                                                                                                GPS / Satellite Radio


                                                  LNAs for ACTIVE ANTENNAS

     NEC GaAs MMIC LNAs                             2.34 GHz     XM Satellite Radio

     NEC’S high gain, low noise, low distor-
                                                                              UPG2310TK
     tion GaAs MMIC LNAs were developed
                                                                                                           TUNER
     specifically for GPS and SDARS active
     antenna applications. They’re housed in            NE3509M04
                                                                          NE662M04  NE3508M04
                                                        NE3510M04                   NESG2101M05
                                                                          NE663M04
     a variety of RoHS-compliant packages                                 NE3508M04
     including the ultra-miniature “TK.” This       2.33 GHz              NE3509M04
                                                                          NESG2101M05
     6 pin, low profile package features flat
     leads for better RF performance.                            SIRIUS Satellite Radio

                                                                                                           TUNER
     NEC GaAs HJ FET TRANSISTORS
                                                      NE3508M04     NE3508M04          NE3508M04
     NEC’s discrete HJ FET LNAs deliver the           NE3509M04     NE3509M04          NESG2101M05
                                                      NE3510M04     NE663M04
     industry’s lowest noise figures with                           NESG3031M05
     high associated gain. The NE3509 and           1.575 GHz
                                                                    NESG2101M05

     NE3510 are ideal first stage amplifiers,
                                                                 GPS
     while the NE3508 is designed to serve
                                                                        UPG2311T5F
     as a second or third stage companion
     device. They’re housed in a miniature,                                                                 GPS
                                                                                                          RECEIVER
     low profile, 4-pin flat-lead SOT-343 style
                                                                NE3508M04         NE662M04
     package that’s RoHS-compliant.                             NE3509M04         NE663M04
                                                                NE3510M04         NESG2101M05
                                                                                  NESG3031M05/M14
     NEC BIPOLAR TRANSISTORS
     The NE662 and NE663 discrete silicon
     LNAs are fabricated using NEC’s high
                                                  FEATURES        See specifications on next page
     speed UHS0 25 GHz fT wafer process
                                                  NEC GaAs MMIC LNAs
     and deliver excellent low voltage/low
                                                  UPG2310TK                   27.0 dB gain, low 1.8 dB NF, high Intercept Point,
     current performance. They’re also                                        miniature 1.1 x 1.5 x 0.55mm 6 pin package
     housed in NEC’s M04 package.
                                                  UPG2311T5F                  Two-stage device delivers 37dB gain with low
                                                                              1.2dB NF, miniature 3 x 3mm 12-pin QFN package
     NEC SiGe TRANSISTORS
     With their low noise figures and high        NEC GaAs HJ FET LNAs

     associated gain, NEC’s discrete SiGe         NE3510M04                   Ideal 1st stage device: 19 dB gain with low 0.35dB NF,
                                                                              miniature 2.0 x 2.05 x 0.59 mm low profile package
     LNAs combine the performance of GaAs
                                                  NE3509M04                   1st stage device, 16.3 dB gain with low 0.35dB NF,
     with the cost advantages of silicon. The                                 2.0 x 2.05 x 0.59 mm SOT-343-style package
     NESG2101 and NESG3031 are housed
                                                  NE3508M04                   Ideal 2nd or 3rd stage device, 14.0 dB gain with
     in NEC’s RoHS-compliant M05 package.                                     0.45 dB NF, miniature SOT-343-style package
     It features an industry-standard SOT-343
                                                  NEC Small Signal Silicon Bipolar Transistor LNAs
     footprint with a low, 0.59mm profile.
                                                  NE662M04                    17 dB gain, ideal 2nd or 3rd stage high gain device,
                                                                              SOT-343-style package, 0.59 mm profile
     DATA SHEETS: www.cel.com
                                                  NE663M04                    +17dBm P1dB, high linearity, ideal 2nd or 3rd stage
                                                                              device, SOT-343-style package, 0.59 mm profile

                                                  NEC SiGe Transistor LNAs
                                                  NESG2101M05                 High output power 2nd or 3rd stage device,
                                                                              2.0 x 2.5mm footprint package, 0.59 mm profile
                                                  NESG3031M05/M14             Low noise, high breakdown voltage 1st or 2nd stage,
                                                                              choice of miniature or ultra-miniature package


CL588B 5.08
NEC RF SEMICONDUCTORS                                                             LNAs for GPS and Satellite Radio ACTIVE ANTENNAS


SPECIFIC ATIONS                 Data Sheets for the devices can be found at www.cel.com



NEC GaAs MMIC LNA                                                                                   Typical Perfomance
                                                                         Supply Voltage          Noise Figure          Gain       Output Power
Part Number           Description                                             (V)                    (dB)              (dB)        P1dB (dBm)

                      High gain, low distortion driver stage
UPG2310TK 1                                                                    3.0                   1.8               27              + 16
                      amplifier, 1.5 x 1.1 x 0.55mm package

                      Two-stage, high gain, low noise device,
UPG2311T5F 2                                                                   3.0                   1.2               37              +9
                      3 x 3 x 0.75mm 12-pin QFN package

NOTE: 1. Data specified at 2.34GHz 2. Data specified at 1.575GHz



                                                                                                       Typical Perfomance
NEC GaAs HJ FETs
                                                                               Noise Figure                     Gain             Output Power
Part Number            Description                                                 (dB)                         (dB)              P1dB (dBm)

                       Designed for 2nd or 3rd stage amplification,
NE3508M041                                                                           0.45                       14                   + 18
                       SOT-343 footprint, 0.59 mm profile

                       First stage device, super low noise figure,
NE3509M041                                                                           0.35                       16                   + 11
                       SOT-343 footprint, 0.59 mm profile

                       First stage, high gain super low noise figure,
NE3510M042                                                                           0.35                       19                   + 12
                       SOT-343 footprint, 0.59 mm profile

NOTE: 1. Data specified at 2.4 GHz 2. Data specified at 2.0GHz



                                                                                                  Typical Perfomance @ 2.4 GHz
NEC Small Signal Bipolar Transistors
                                                                               Noise Figure                     Gain             Output Power
Part Number            Description                                                 (dB)                         (dB)              P1dB (dBm)

                       Ideal for 2nd or 3rd stage amplification,
NE662M04                                                                             2.0                        17                   + 11
                       SOT-343 footprint, 0.59 mm profile

                       Ideal for 2nd or 3rd stage amplification,
NE663M04                                                                             1.5                        11                   + 17
                       SOT-343 footprint, 0.59 mm profile



                                                                                                  Typical Perfomance @ 2.4 GHz
NEC SiGe Transistors
                                                                              Noise   Figure 1                  Gain             Output Power
Part Number               Description                                                (dB)                       (dB)              P1dB (dBm)

                          High power, low noise, high breakdown
NESG2101M05                                                                          1.5                        13                   + 21
                          voltage, SOT-343 footprint, 0.59 mm profile

                          High power and breakdown voltage, low noise,
NESG3031M05/M14                                                                      1.0                        17                   + 13
                          2.0 x 2.05 x 0.59 or 1.2 x 1.0 x 0.5mm package

NOTE: 1. Biased for best gain




California Eastern Laboratories 4590 Patrick Henry Drive Santa Clara, CA 95054 408.919.2500 info@cel.com www.cel.com

				
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posted:8/13/2011
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