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MULSIC Tools and ISE TCAD

VIEWS: 22 PAGES: 17

									                              Integrated Systems Engineering
                              Development, Modeling, and Optimization of Microelectronic
                              Processes, Devices, Circuits, and Systems




            MULSIC Tools and ISE TCAD

                (2nd MULSIC Workshop, Erlangen)




June 2004
2nd MULSIC Workshop, Erlangen

                                     Outline


  ISE Products overview
  Integration of MULSIC tools in ISE TCAD
  Integration of topography simulation tools
  Conclusion and next steps




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       2nd MULSIC Workshop, Erlangen

                                  Product overview

                                          Simulation Environment
                                                                                  Process & Device
                                                GENESISe™                          & Interconnect
                                                                                   Design Analysis

                       Process          Structure         Device     Extraction
Layout & Process                        & Mesh           & System
                                                                                   Circuit Modeling
    Recipe
                   FLOOPS-ISE          DEVISE™           DESSIS™    ISExtract™

                                                                                   Yield, Statistical
                                                                                       Analysis

                                         TCAD Fab Package™



                                            Services

                                             Support




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             Integration strategy: Goals


   Establish TCAD environment for back-end simulation and thus
   complement TCAD for manufacturing activities of ISE in front-end.
   Power to select models varying in accuracy of simulated physics
   and computing time.
   Methodology to address manufacturing, process integration and
   reliability challenges.
   Pass statistical and sensitivity data to other environments: yield
   management systems, EDA




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                                   2nd MULSIC Workshop, Erlangen

                                                     MULSIC simulation flow and tools
                                     Process Description, Layout and process step variability

                                                                                                                                  Simulation Control
                                                                                                                        Parametric Analysis and DoE
                                                          WP5(2):                                                                Statistical Analysis
                                                          3-D Process Emulation for BE:                                                 Optimization
Integration of WP3 and WP4 tools




                                                          DEVISE Process Emulator             WP3: 3-D Physics                            GENESISE
                                                          •Geometrical modeling               based topography
    in ISE TCAD environment




                                                                                                                                            OptimISE
                                      BE TCAD flow




                                                          •Physical modeling interface        simulation (FhG)
                                                                                    Solid-
                                                          •Lithography integration: Solid-C   DEP-
                                                                                              DEP-3D
                                                                                              ANETCH
             WP5(1):




                                                                                              CMP-
                                                                                              CMP-2D


                                                                                                                             WP5(2):
                                                           Meshing Tools for Back-end                              Testing and benchmarking of
                                                          (drawing on background work)                           Integrated DEVISE environment
                                                                 NOFFSET-
                                                          MESH, NOFFSET-3D, (YAMS, GHS3D)

                                                                                                                 Post-processing and Visualization
                                                          WP4: Device and System Simulation (TUV) :                                     TECPLOT
                                                          RLC, EM, Reliability                                                           INSPECT
                                                          STAP

                                   RLC, MTF and variation as a function of process parameters                                WP5(2):
                                   Process compact models                                                 Investigation of link to manufacturing/yield
                                   Process Explorer


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    2nd MULSIC Workshop, Erlangen

                   MULSIC tools: DoE integration

            Process Model
Process
Variation
                     Process
                     Simulation




                      Device                MULSIC topography tools
                      Simulation            integrated in GENESISe
Device
Variation
                      Extraction and
                      Circuit Simulation

                                                ISE Process Explorer for
                                                  evaluation of process-
                                                device relations (process
                                                       models) and yield


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 2nd MULSIC Workshop, Erlangen

                                     FabLink TCAD
  Simulation             Fab DB
                                             ISE is integrating TCAD with fab
                         Process flow
                         and recipes
                                             software systems
                         Masks
                                             Process, device and metrology
                         In-process          data provides good data for TCAD
                         metrology data      simulation set-up and calibration

   Predicted
   metrology                                 TCAD can provide additional
   data                                      precise measurement-equivalent or
                                             predicted device data
   Equivalent            Device
   device                test data
   test data
                                             Strong focus on
   Predicted                                  – Software integration of fab
   device
   performance                                   software system with TCAD
                                              – Providing process models
TCAD process models   Process and device         linking process factors do
and compact models    info and metrology
                      data
                                                 device performance



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      2nd MULSIC Workshop, Erlangen

         MULSIC tools: LIGAMENT integration
                                              GENESISe and LIGAMENT
                                              are the basis for direct links
                                              between MES (manufacturing
                                              execution system), metrology
                                              databases and ISE TCAD
                                              tools.
                                                Process flow information
                                              (where available) can be
                                              downloaded into LIGAMENT.
                                                Variability data can be
                                              downloaded into GENESISe
                                              for parametric and statistical
                                              analysis.
                                                 Custom implementations of
MULSIC topography tools in                    above links have been already
LIGAMENT. Process flow (top)                  made with selected
and layout (right)                            customers.


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                     Simulation backbone
                                                         Wafer
 ISE tool DEVISE as open backbone for
 interfacing tools at different levels:
                                                                     Lithography
     Geometry level integration of external
     topography tools.
     Physical modeling interface (PMI) to couple          TCAD
                                                                      Etching
     external topography tools simulating physics        Process
                                                        Simulation
     with geometry engine (ACIS) of DEVISE.
 Electrical contact definition.
                                                                     Deposition
 Interface to the ISE meshing engines.
 Establishes TCAD environment for back-end
 simulation. This complements TCAD for
 manufacturing activities of ISE for the front-           Device
 end.                                                   Simulation

 Enables the user to select models varying in
 accuracy of simulated physics and computing
                                                        Extraction
 time.
                                                    SPICE Parameter


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     DEVISE: Geometry integration platform
                                                   DEVISE
                                                     ISE tool based on ACIS (Spatial
                                                   Inc., www.spatial.com) geometry
                                                   kernel
                                                     Modern user interface
                                                     Interactive and batch mode, both
                                                   with full scripting capabilities
                                                     Front-end to meshing engines

                                                   MULSIC-specific:
                                                     Integration of individual MULSIC
                                                   process modules
                                                     Extension of surface evolution
                                                   capabilities for deposition and
                                                   etching
                                                     Physical and geometrical modeling
                                                   interface
                                                     Polyhedral modeler (under
A two layer interconnect structure created using
                                                   development) for more efficiency
     damascene process emulation in DEVISE

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      2nd MULSIC Workshop, Erlangen

                    DEVISE: Modeling interface

Barrier                                              Geometric and physical modeling
deposition on a                                      interface
structure with
trenches and
conical vias
                                                       Integration of geometry or physics
using coupled                                        based external topography simulation
DEVISE-DEP3D                                         tools (e.g. DEP3D, Anetch) into DEVISE

                                                       The surface movement in DEVISE is
                                                     determined by the etching/deposition
                                                     rates from these tools.

                                                       Use of vertex or face displacement
                                                     functionality for the (triangulated)
                                                     surface movement in DEVISE.

                                                      Automatic detection and repair of
     Constant displacement deposition emulation in
                                                     surface self-intersection and topology
     DEVISE (right frame) over a sputtered barrier   change in DEVISE.
     layer simulated using DEP3D (left)

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                    Lithography integration
                                               The lithography simulation tool
                                             Solid-C is integrated through
                                             LIGAMENT.
                                               DEVISE generates the 3-D
                                             structure which is supplied to
                                             Solid-C along with the layout
                                             information for lithography
                                             simulation.
                                              Solid-C generates the resist
                                             pattern using a cell-based
                                             approach.
                                               The structure is output and
                                             imported back in DEVISE.
                                              Decimation/smoothening tools
                                             (YAMS, Smooth3D) are required
Lithography simulation in Solid-C on a 3-D   to allow further geometric
DEVISE structure and subsequent etch step    operations on the structure.
using ANETCH

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      Integration: Some examples (see demo)




Conventional structure before CMP step

                                              3-D polishing emulation and contact generation
                                                (for capacitance extraction) using DEVISE




A damascene structure emulated/simulated        Temperature and current density
using the integrated environment                distribution computed using STAP

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                  Current overall status

  Full simulation chain complete and working for simple
  examples
  Fully integrated into ISE TCAD


  Both individual process step simulation modules as well as
  complete chain need further stabilization for industrial use.
  Problems relating to stability of geometric operations in
     Surface operations
     Changing surface discretization in interaction with
     algorithms
     Efficient and robust bulk meshing

  Remaining work during and after project will address
  these issues


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      Individual tool status and outlook

  GENESISe, OptimISE, LIGAMENT
    Complete and part of current ISE TCAD releases

  DEVISE
     Continued development under MULSIC
     First version with surface movement and modeling interface in
     Release 10
     Enhancement for robust and fast handling of polygonal data in
     spring 2005

  DEP3D, ANETCH, CMP2D, STAP
     Continued development under MULSIC
     Will enter beta program at project end


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        Commercialization perspective

  Currently in the process of completing the MULSIC tool flow

  Accepting further benchmark specifications for remainder of project

  After project end, beta-program with 2-3 selected customers for 6-12
  months to use tools in end-user setting
      Joint project on tool introduction
      Complete set of tools including non-ISE tools
      Dedicated assistance/support for evaluation and feedback and
      further development

  Subsequent generic commercialization of refined products




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                         Outlook beyond MULSIC

                                                  Study of process and electrical
                                                parameters (RLC) and electro-
                                                migration for a complete process
                                                flow for complete structure (test
                                                structure and standard cell)

                                                 Calibration: complementing and
SEM of a via-first dual damascene trench
illustrating fencing and faceting around the    analyzing available (experimental)
via hole. Source: Adapted from JVST 2001        data with simulated data

                                                  Physical model extension and
                                                hierarchy
                                                      More complete models
                                                     including plasma modeling,
                                                     bulk and surface chemistry,
                                                     sheath models
                                                      Extension to other process
   Examples of bowed, tapered and                    steps
   vertical via profiles

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