Curriculum Vitae

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					Curriculum Vitae                                                      Date of birth:
                                                                      Tel.:
                                                                                           03/21/1985
                                                                                           +98-912-4572270
SeyedehAida Ebrahimi                                                  Email:               aida.ebrahimi@gmail.com
                                                                                           a.ebrahimi@ece.ut.ac.ir
                                                                      Homepage:            www.aidaebrahimi.info
                                                                      P. O. Box:           14395-1387, Tehran, Iran


Education
M. Sc.: Electrical Engineering/ Semiconductor Device 2007-2009
School of Electrical and Computer Engineering
University of Tehran, Iran, GPA 19.05/20

Thesis: Fabrication of Highly Sensitive Capacitive Sensors and Actuators based on Branched Carbon Nanotubes,
20/20
Master Seminar: Optical MEMS, Basic Concepts to Advanced Devices

B.Sc.: Electrical Engineering/Telecommunications 2003-2007
School of Electrical and Computer Engineering
University of Tehran, Iran, GPA 17.15/20

High School Diploma: Physics and Mathematics 1999-2003
Farzanegan High School, Under supervision of Iranian National Organization for Development of Exceptional
Talents (NODET)
Gorgan, Iran, GPA 19.65/20

Language Proficiency
TOEFL            101 (iBT)

Honors
  • Ranked 1st among 35 graduate students of the Electronics major at University of Tehran, 2009.
  • Ranked 3rd among 400 graduate students of the Faculty of Engineering at University of Tehran, 2009.
  • Selected as an Exceptional Talented Student in ECE department of University of Tehran and admitted to
        study master degree without participation in national entrance exam, 2007.
    •   Ranked 53rd among more than 400,000 participants in National Universities Enterence Exam, 2003.
    •   Bronze Medal in National Mathematics Olympiad, 2001.
    •   Ranked 1st in national scientific competition, among more than 100,000 high school students, 1996

Research interests
   • MEMS/NEMS (Sensors and Actuators, MOEMS, Bio-MEMS), Integration and Packaging Techniques
   • Flexible Electronics (Thin Film Transistors)
   • CNT based devices
   • Optoelectronics (Theory and Fabrication)
Research Experience
    •   Thin Film Laboratory (Summer 2005 to date)
            o    Clean room processes and device fabrication steps
                     -   Dry Etching (RIE and Deep-RIE)
                     -   Silicon Etching (Anisotropic Wet Etching, Deep Vertical Etching, Lateral Etching)
                      -   Sputtering (RF and DC-Magnetron)
                      -   Evaporation tools (Thermal and Ebeam)
                      -   CVD systems (RF/DC-PECVD, LPCVD)
                      -   Standard Photo-Lithography
             o   Various characterization techniques: SEM, FE-SEM, XRD, Raman, TEM, EDX, XPS, and FTIR

             Projects
             o Fabrication of Capacitive Interdigital sensors and actuators based on highly overlapped Tree-like
                 Carbon Nanotubes
             o Fabrication of Electric-field induced catalytic nanostructures on Si micro-grasses for gas detection
             o Working and studying on low-frequency capacitive accelerometers based on silicon substrate
             o Lateral Etching of Silicon
             o Low temperature stress-assisted metal-induced crystallization of amorphous silicon on polymer
             o Fabrication of polycrystalline thin film transistors on PET by applying external mechanical stress
                 and plasma enhanced hydrogenation
             o Contribution in fabrication of CNT-based displays

Job Experience
   • SensIran company (Fall 2009 to Sep. 2010)
             o   One of the authorized operators of FE-SEM Hitachi S1831
             o   Contribution in construction of DRIE, DC-PECVD, LP-CVD, Wet-Bench, and Photolithography
                 and Mask aligner set-ups

Teaching Experience
   • Advanced Solid State Physics (Graduate Course),
         Teaching Assistant of Prof. Mohajerzadeh, University of Tehran, Tehran, Fall 2010.
    •    Electronics II (Undergraduate Course),
         Teaching Assistant of Prof. Afzalikousha, University of Tehran, Tehran, Fall 2010.
    •    An introduction to Solid State Physics
         Workshop, IEEE student branch of School of ECE, University of Tehran, Tehran, Summer 2007.
    •    An Introduction to Quantum Mechanics
         Workshop, IEEE student branch of School of ECE, University of Tehran, Tehran, Summer 2006.
    •    Number Theory
         Lecturer, Training selected high school students participating in National Mathematics Olympiad, Gorgan,
         Iran, 2004-2007.
    •    Combinatorial Analysis
         Lecturer, Training selected high school students participating in National Mathematics Olympiad, Gorgan,
         Iran, 2004-2007.

Computer Skills
•        Simulation Tools
        HSPICE, HFSS, CST, COMSOL, SILVACO
•        Software Programs
        MATLAB, Maple, Quartus, Microsoft Office (Word, Power Point, FrontPage, Visio, etc), AutoCAD,
        Photoshop, CorelDraw Graphics Suite
•        Programming Languages
        C++, Visual C++, HDL languages (Verilog and VHDL), Pascal
Publications
Journal Papers:
     1. Y. Abdi, A. Ebrahimi, S. Mohajerzadeh and M. Fathipour, “High sensitivity interdigited capacitive
         sensors using branched tree-like carbon nanotubes on silicon membranes”, App. Phys. Lett. 94, (2009)
         1735071-3
     2. S. Darbari, Y. Abdi, A. Ebrahimi, and S. Mohajerzadeh, “Fabrication of silicon based actuators using
         branched carbon nano-structures”, accepted at journal of IEEE Sensors, (2010).
     3. S. Paydavosi, A. Ebrahimi, S. Mohajerzadeh, A. H. Tamaddon, N. Izadi, A. Behnam and Y. Abdi,
         “Hydrogenation assisted metal-induced lateral nano-crystallization of amorphous silicon on PET at low
         temperatures”, Thin Solid Films, Vol. 516, pp. 7790-7796, (2008).
     4. M. Kayyalha, J. Naghshnilchi, A. Ebrahimi, and S. Mohajerzadeh, “High Aspect Ratio Hydrogenation-
         assisted Lateral Etching of (100) Silicon Substrates”, submitted to Journal of Micromechanics and
         Microengineering, (2011)
    5. A. Behnam, F. Karbassian, S. Mohajerzadeh, A. Ebrahimi and M.D. Robertson, “Low-temperature nickel-
        induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress”, Solid-States
        Electronics, Vol. 50, pp.1618–1624, (2006).

Conference Papers:
   1. A. Ebrahimi, S. Mohajerzadeh, A. Alihosseinzadeh, A. Khodadadi, and Y. Mortazavi, “Preferential
       Oxidation of CO Based on Electro-Thermally Assisted Catalytic Ni/Cu Nanostructures on Si Micro-Grass”,
       accepted at 219th Electro-Chemical Society Meeting, Canada, 2011.
   2. A. Ebrahimi, S. Mohajerzadeh, A. Alihosseinzadeh, A. Ali Khodadadi, and Y. Mortazavi, “Electric-field
       assisted Catalytic Ni and Cu Nanostructures on silicon micro grasses suitable for CO combustion”,
       accepted at MRS (Spring meeting), San Francisco, CA, 2011.
   3. A. Ebrahimi, H. Miladi, and S. Mohajerzadeh, and A. Moafi, “A Two Level Etch Process for Fabrication
       of Low Frequency Out-of-Plane Accelerometer”, presented at APCOT, Australia, 2010.
   4. A. Ebrahimi, Y. Abdi, S. Mohajerzadeh and Y. Komijani, “Highly Sensitive Capacitive Transducer Based
       on Comb-Like Array of Branched Carbon Nanotubes”, presented at EurosensorsXXIII, Swiss, September
       2009.
   5. A. Ebrahimi, Y. Abdi, S. Mohajerzadeh and S. Paydavosi, “Interdigital Capacitive Array of Tree-like
       Carbon Nanotubes on Silicon-based Membranes for Sensor Applications”, presented at MRS conference
       (Spring meeting), San Francisco, CA, April 2009.
   6. A. Ebrahimi, S. Darbari, S. Mohajerzadeh and S. Azimi, “Fabrication of Suspended Interdigit structures
       for Capacitive Sensors on (100) and (111) Silicon Wafers”, accepted at APCOT, Taiwan, 2008.
   7. A. Ebrahimi, S. Paydavosi, S. Mohajerzadeh, A. Behnam, Y. Abdi, and M.D. Robertson, “Hydrogenation
       assisted metal-induced lateral nano-crystallization of amorphous silicon on PET at low temperatures”,
       presented at EMRS Conference, France, June 2006.
   8. S. Darbari, A. Ebrahimi, Y. Abdi, and S. Mohajerzadeh, “A novel SAW-like interdigital capacitive
       transducer based on branched carbon nanotubes”, accepted at ICNST, China, 2010.
   9. S. Paydavosi, A. Ebrahimi, S. Mohajerzadeh, A. Behnam, and Z. Sanaie, “Ultra Low Temperature Poly-
       crystalline Silicon Thin Film Transistors on Flexible PET Substrates for Display Applications” presented at
       IDRC Conference, 2006.
   10. S. Paydavosi, A. Ebrahimi, S. Mohajerzadeh, N. Izadi, A. Behnam, “Poly-crystalline Thin Film
       Transistors”, presented at ICEE Conference, Iran, 2007.
   11. S. Darbari, Y. Abdi, A. Ebrahimi, N. Doostani, and S. Mohajerzadeh, “Fabrication and Modeling of a
       Novel SAW-Like Transducer Device Based on Branched Carbon Nanotubes”, accepted at 219th Electro-
       Chemical Society Meeting, Canada, 2011.
   12. S. Darbari, Y. Abdi, A. Ebrahimi, and S. Mohajerzadeh, “Novel interdigital actuators and sensors based on
       highly overlapped branched carbon nanotubes”, presented at Nanotech conference, San Francisco, CA,
       2010.
   13. M. Kayyalha, J. Naghshnilchi, A. Ebrahimi, and S. Mohajerzadeh, “High Aspect Ratio Hydrogenation-
       Assisted Lateral Etching of (100) Silicon”, accepted at MME, Netherlands, 2010.
   14. Z. Sanae, S. Darbani, J. Koohsorkhi, A. Ebrahimi, S. Mohajerzadeh, and Y. Abdi, “PECVD-grown
       Vertically-aligned Carbon Nano-Tube’s on Silicon Substrate, Utilized to Realized a Preliminary Display”
       presented at ICEE, Iran, 2006.
    15. J. Koohsrokhi, Y. Abdi, Z. Sanaie, S. Mohajerzadeh, A. Ebrahimi, A. Khodadadi, M.D. Robertson, and
        J.C. Bennett, “Embedded Carbon Nanotubes suitable for the realization of field emission transistors and
        displays”, presented at Carbon Conference, 2006.
    16. A. Behnam, S. Haji, F. Karbassian, S. Mohajerzadeh, A. Ebrahimi, Y. Abdi, and M.D. Robertson, “Nano-
        crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced
        crystallization technique”, presented at MRS (spring meeting), San Francisco, CA, 2006.

Extracurricular Activities
    •    Referee, 11th Iranian Student Conference on Electrical Eng., ISCEE 2008.
    •    Secretary of IEEE student branch, 2006-2007
    •    Executive board of 9th Iranian Student Conference on Electrical Engineering (ISCEE 2006)
    •    Contribution in University of Tehran 70th anniversary

References
   • Prof. S. Mohajerzadeh, Professor, University of Tehran, ECE department, mohajer@ut.ac.ir
   • Prof. M. Shahabadi, Associate Professor, University of Tehran, ECE department, shahabad@ut.ac.ir
   • Prof. A. Afzalikousha, Professor, University of Tehran, ECE department, afzali@ut.ac.ir
   • Prof. E. Aslsoleimani, Professor, University of Tehran, ECE department, soleimni@ut.ac.ir
   • Prof. Y. Abdi, Assistant Professor, University of Tehran, Physics department, abdi@khayam.ut.ac.ir

				
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Description: Capacitive sensors are often known as the capacitance level meter, capacitance level meter capacitive sensing element is a cylindrical capacitor according to the principle of work, by the two capacitor plates insulated coaxial cylindrical inner and outer electrodes electrodes, between the two cylinders filled with a dielectric constant e of the electrolyte, the capacitance between two cylinders for the C = 2ΠeL/lnD/d, where L is the overlapping part of two tube length; D electrode diameter for the outer tube; d is the diameter of the inner cylinder electrode; e is the dielectric constant of the intermediate medium. In the actual measurement D, d, e is basically unchanged, so you can know the level measured at the level of C, which is easy to use with capacitive sensors, a simple structure and high sensitivity, low price and so one of the reasons .