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DNS Lithography Breakfast Forum

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  • pg 1
									    DNS Lithography Breakfast Forum
                               Phil Alibrandi
              Director, US Strategic Marketing
                                  July 15, 2003



1
 THE Lithography Design Rule =                                                  k1xl/NA

                             Reduction in Design Rules has been enabled
                             Reduction in Design Rules has been enabled
                                through scaling of 3 basic parameters
                                 through scaling of 3 basic parameters
         1                                                         0.95
     0.9                                                                     G-line    ~0.03 Reduction
                                                                   0.85                ~0.03 Reduction
                      l transition
                                                             F2                         in k11 per Year
                                                                                         in k per Year
     0.8              l transition
                       ~ every 6
                        ~ every 6                                  0.75
     0.7                 years
                          years                                            I-line
                                                     ArF           0.65
     0.6
NA




                       I-line


                                                                  k1
     0.5                                       KrF
                                                                   0.55
     0.4                                           ~ 0.03
                                                    ~ 0.03                             KrF
                                                 increase          0.45
     0.3                                          increase                                        ArF
                                                in NA per
                                                 in NA per
                     G-line                                        0.35
     0.2                                            year
                                                     year
                                                                                                          F2
     0.1                                                           0.25
      1982 1986 1990 1994 1998 2002 2006                              1982 1986 1990 1994 1998 2002 2006
                    First Year of Tool Shipment                           First Year of Tool Shipment
 Source: ASML


     2       DNS Lithography Forum July 2003
Shrinking Process Windows

    Smaller process windows make system performance
    Smaller process windows make system performance
    even more critical for die yield and to avoid rework
    even more critical for die yield and to avoid rework
                                12
                                               100 nm
                                 9
          Exposure energy [%]




                                                     80nm
                                 6
                                 3                              CD within
                                 0                          tolerance = O.K.
                                                                  70nm
                                 -3
                                 -6
                                                                    J
                                 -9
                                -12
                                      -0.6   -0.45   -0.3   -0.15   0    0.15   0.3   0.45   0.6
                                                               Focus [mm]

3   DNS Lithography Forum July 2003
                                      l   Ultra-k1 Portfolio
                                            l   Mask Design Optimization
                                                  lLithoCruiser™, CPL™,
                                                  MaskWeaver™, DDL™
                                            l   Aberration Measurement
                                                and Control
                                            l   Customized Illumination
                                            l   Process Variability
                                                Compensation

                                      l   Dual Stages
                                            l   Imaging
                                            l   Overlay
                                            l   Productivity
                                            l   Value of Innovation
4   DNS Lithography Forum July 2003
    LithoCruiser Mask-Source Optimization
                Design                             Process                  Stepper
                 Clip                               Rules                 Fingerprint


                                                 LithoCruiser




                                      Stepper                   OPC/CPL
                                      Settings                   Recipe




        •Integrated Low k1 Imaging Simulation and Optimization Suite
        •Simultaneous Mask and ASML Scanner Optimization
        •Reduces Process Development Costs and Time to Market

5   DNS Lithography Forum July 2003
                                      l   Ultra-k1 Portfolio
                                            l   Mask Design Optimization
                                                  lLithoCruiser™, CPL™,
                                                  MaskWeaver™, DDL™
                                            l   Aberration Measurement
                                                and Control
                                            l   Customized Illumination
                                            l   Process Variability
                                                Compensation

                                      l   Dual Stages
                                            l   Imaging
                                            l   Overlay
                                            l   Productivity
                                            l   Value of Innovation
6   DNS Lithography Forum July 2003
k1 Imaging Sensitivity to Lens Aberrations


     l                     L1-L2 measure of asymmetry and coma
                                  0.9
    Sensitivity (% DCD / ml Z7)




                                  0.8                                  L1      L2


                                  0.7

                                  0.6

                                  0.5

                                  0.4

                                  0.3

                                  0.2

                                  0.1

                                  0.0
                                    0.30   0.35   0.40   0.45   0.50    0.55        0.60

                                                         k1
7    DNS Lithography Forum July 2003
Continuing Progress in ArF Aberrations
Residual RMS Aberration Level (AU)



                                                                       1100
                                                                       0.75 NA           1150     1200
                                                                                        0.75 NA   0.85 NA

                                                               Manufacturing Learning




                                                                   Lens #
                                      •ILIAS™ provides waferless measurement techniques for setup and lens
                                      control
                                      •LithoGuide™ optimizes imaging performance with on-board aberrations
                                      monitoring
        8                            DNS Lithography Forum July 2003
      ILIAS Performance: Accuracy


       l     On board interferometer to measure lens aberrations with sub nm accuracy
       l     Wavefront Comparison-Zeiss PMI to ILIAS with excellent correlation
       l     Zernike set measurements at 13 points across the slit in 15 minutes


                                         AT:1100, l=193nm, NA=0.75

 PMI

ILIAS


            -12.7              -8.5          -4.2         0.0       4.2   8.5      12.7

                                                    Slit Position




  9    DNS Lithography Forum July 2003
     ILIAS Performance: Reproducibility
      l    Same Scanner (ASML AT:1100, 193nm), same lens
              l       2 Independent ILIAS modules
                            ILIAS 1             ILIAS 2             Difference (nm)   10



                                                                                      5



                                                                                      0



                                                                                      -5



                                                                                      -10
                      30
                               Zernike Correlation (ml)
                      20

                      10
            ILIAS 1




                       0

                      -10

                      -20                    13 positions, 33 Zernikes
                      -30
                        -30     -20    -10       0      10     20        30
                                             ILIAS 2
10   DNS Lithography Forum July 2003
                                       l   Ultra-k1 Portfolio
                                             l   Mask Design Optimization
                                                   lLithoCruiser™, CPL™,
                                                   MaskWeaver™, DDL™
                                             l   Aberration Measurement
                                                 and Control
                                             l   Customized Illumination
                                             l   Process Variability
                                                 Compensation

                                       l   Dual Stages
                                             l   Imaging
                                             l   Overlay
                                             l   Productivity
                                             l   Value of Innovation
11   DNS Lithography Forum July 2003
       LumenShaper™
       Customized Illumination for Optimized Process Windows




                                             ED Window Dipole versus Annular




     •Diffractive Optical Elements (DOEs) are designed to provide customized
     illumination for specific process layers at full productivity
     •LumenShaper together with QUASAR™ enables larger process windows for
     increased yield at low k1 values
12   DNS Lithography Forum July 2003
                                       l   Ultra-k1 Portfolio
                                             l   Mask Design Optimization
                                                   lLithoCruiser™, CPL™,
                                                   MaskWeaver™, DDL™
                                             l   Aberration Measurement
                                                 and Control
                                             l   Customized Illumination
                                             l   Process Variability
                                                 Compensation

                                       l   Dual Stages
                                             l   Imaging
                                             l   Overlay
                                             l   Productivity
                                             l   Value of Innovation
13   DNS Lithography Forum July 2003
DoseMapper™
Improved CD Control & Greater Process Latitude




      l   Compensates for external sources of non-uniformity
      l   Critical dimension analysis
      l   Allows correction of CD variations over the entire wafer resulting in
          better CD uniformity

14   DNS Lithography Forum July 2003
                                       l   Ultra-k1 Portfolio
                                             l   Mask Design Optimization
                                                   lLithoCruiser™, CPL™,
                                                   MaskWeaver™, DDL™
                                             l   Aberration Measurement
                                                 and Control
                                             l   Customized Illumination
                                             l   Process Variability
                                                 Compensation

                                       l   Dual Stages
                                             l   Imaging
                                             l   Overlay
                                             l   Productivity
                                             l   Value of Innovation
15   DNS Lithography Forum July 2003
TWINSCANTM Dual Stages
Maximizing Good Die Per Day




     l    Focus performance is independent of stage and scan direction
     l    Inner and edge dies are all printed at optimum focus
                     l   1.5 mm focus edge clearance
                     l   <10 nm Within field focus variation, same for inner and edge field
                     l   <55 nm Across wafer focus variation, on product

16       DNS Lithography Forum July 2003
     TWINSCANTM AT:1200B Results
     Dense Lines
 80nm
                      Binary Mask, NA/s=0.85/0.88-0.58, 225nm TArF6111 on ARC28




     -0.25mm              -0.20mm            -0.10mm       0.0mm          +0.10mm      +0.2mm
                                             0.45 mm focus range
 70nm
              Binary Mask, NA/s=0.85/0.93-0.69, Dipole, 175nm TArF6111 on ARC28




     -0.15mm         -0.10mm            -0.05mm    0.0mm        +0.05mm      +0.10mm    +0.15mm

                                          0.30 mm focus range


17    DNS Lithography Forum July 2003
     TWINSCANTM AT:1200B Results
     60nm Lines, 130nm Pitch


          Binary Mask, NA/s=0.85/0.93-0.69, Dipole, 175nm TArF6111 on ARC28




                -0.15mm           -0.1mm   -0.05mm   Nominal foc.   +0.05mm   +0.10mm

                                           0.25mm focus range
            •k1= 0.286
            •Binary Mask results, indicating quality of optics, focus and stages
            •Early 1200 lens results meeting many 65nm node ITRS roadmap
            requirements today

18   DNS Lithography Forum July 2003
       TWINSCANTM AT:1200B Results
       50nm Isolated Line with AltPSM
                      Alternating PSM, NA/s=0.75/0.30, 175nm TArF 5068, 37nm ARC28




        -0.15mm                 -0.10mm         -0.05mm         0.0mm        +0.05mm   +0.1mm   +0.15mm

                                                      > 0.3mm focus range

                     60
                     58
           CD [nm]




                     56
                     54
                     52
                     50
                          -13       -6.5          0       6.5           13
                                          Slitposition [mm]

       CD variation through the slit of 2.2 nm (range)
19   DNS Lithography Forum July 2003
TWINSCANTM AT:1200B Results
100nm Contact Holes through pitch solution
      Pitch:                  200nm     325nm        400nm       800nm



                             BF-0.2µm   BF-0.1µm    BF-0.15µm   BF-0.15µm

     0.85NA
     0.85NA
     BIM Quasar
     BIM Quasar
     0.79/0.49
     0.79/0.49                     BF      BF          BF          BF
     fixed dose
     fixed dose




                             BF+0.2µm   BF+0.1µm    BF+0.15µm   BF+0.15µm
     Max DOF:               0.4µm DOF   0.2µm DOF   0.3µm DOF   0.3µm DOF

20    DNS Lithography Forum July 2003
TWINSCANTM AT:1200B Results
80nm Dense & Isolated Contact Imaging
       6% attPSM, NA=0.85, Quasar 0.93so/0.69si, 250nm TArF 7047, 82nm ARC19




-0.15µm               -0.10µm           -0.05µm    BF     +0.05µm    +0.10µm    +0.15µm
                                               Focus Range
     -0.15µm           -0.10µm          -0.05µm    BF      +0.05µm   +0.10µm   +0.20µm




       6% attPSM, NA=0.80, Conventional Illum. s=0.40, 250nm TArF 7047, 82nm ARC19
     •Early 1200 lens results meeting many 65nm node ITRS roadmap
     Contact Hole requirements today
21    DNS Lithography Forum July 2003
                                       l   Ultra-k1 Portfolio
                                             l   Mask Design Optimization
                                                   lLithoCruiser™, CPL™,
                                                   MaskWeaver™, DDL™
                                             l   Aberration Measurement
                                                 and Control
                                             l   Customized Illumination
                                             l   Process Variability
                                                 Compensation

                                       l   Dual Stages
                                             l   Imaging
                                             l   Overlay
                                             l   Productivity
                                             l   Value of Innovation
22   DNS Lithography Forum July 2003
     Overlay Requirements


l    Process overlay requirement of 30% is often reduced to 25%
     of design rule for ArF exposure tool contribution
l    TWINSCANTM overlay specification is 12nm single tool and
     20nm matched machines
l    Current overlay performance is meeting ~70nm design node
     requirement now, with roadmap for further improvements
l    Tighter overlay performance allows for manufacturing
     flexibility, avoiding need for tool dedication
l    Tighter overlay results lead to higher yielding wafers and
     better performing devices


23   DNS Lithography Forum July 2003
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TWINSCANTM In-Situ Metrology
Improved Overlay without Throughput Penalty




     l   Superior overlay through the use of up to 16 alignment mark pairs
     l   No compromise between alignment performance and throughput


29   DNS Lithography Forum July 2003
How Many Exposures on a 300mm Wafer?
Exposure Shots / 300mm Wafer*


                                   220
                                                                  Typical Die Sizes
                                   200
                                   180
                                   160
                                   140
                                   120
                                                                                  Typical # Shots = 125
                                   100
                                     80
                                     60
                                             5    6    7    8      9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
                                             x    x    x    x      x x x x x x x x x x x x x x x x x x
                                             5    6    7    8      9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26

                          ASML tests at 109 300mm exp. today,                                Die Size [mm]
                          raising the bar to 125 exp. in ‘04
                                * 3mm wafer edge exclusion, minimum 1 die within exclusion

30                              DNS Lithography Forum July 2003
    Continuous Throughput versus Die Size
                         150
                         140
                                                                                         Dual Stage
300mm Throughput [WPH]




                         130
                         120
                         110
                         100
                          90                                                                                 8 Pairs

                          80
                                                                                         Single Stage
                          70                                                                                 16 Pairs

                          60
                                 5    6     7    8    9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
                                 x    x     x    x    x x x x x x x x x x x x x x x x x x
                                 5    6     7    8    9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26

                                                               Die Size [mm]
                    The Dual Stage TWINSCANTM consistently provides greater than 100 WPH
                    under most Real Fab Process Conditions (die size, exposures, dose)


        31                DNS Lithography Forum July 2003
The low k1 Limbo: How low can we go?




32   DNS Lithography Forum July 2003
The Value of Innovation
                                                   Dual Stage Alignment allows high
      Dual Stage Wafer Mapping                   OVL sample size with high productivity
       conserves valuable DOF




                                                                   Ultra k1 Dose Mapper
                                                                    minimizes external
                           Ultra k1 Sources                        contributions to CDU
                             maximize PW
                         for individual layers
                                                     Low Aberration Lenses with
                                                     on board interferometry
                                                     optimize imaging at low k1


                         ASML Innovation enables
                          low k1 manufacturing
                               1

33   DNS Lithography Forum July 2003
The low k1 Limbo: How low can we go?

       l    Historically, Lithography overcomes new obstacles
              l    with Low k1 enhancements
              l    with Improved equipment
              l    with Advances in resists
              l    with RET on masks
       l    Higher NA ArF lenses under consideration
              l    Per modeling, improves resolution
       l    Immersion in development, with end-of-year decision
              l    If commercially viable, could extend ArF at least one node
       l    There are no ArF limits, yet. We’ve just begun….



34   DNS Lithography Forum July 2003
Acknowledgments

       l    Strategic Marketing
              l    Pete Jenkins
              l    John Doering
              l    Skip Miller
       l    Demo Lab
              l    Dave Witko
              l    Tom Harris
              l    Cassandra Owen
              l    Gerard van Reijen
       l    Marcom
              l    Mark Bigelow
              l    Jacqueline Kirkpatrick-Keller


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