Operational Amplifier design with BJT _ MOSFET Technology by bestt571

VIEWS: 306 PAGES: 5

More Info
									EET 323                                                                                                                                     1




                     Operational Amplifier design with BJT
                            & MOSFET Technology
                                                               Daniel L. Longstreet



   Abstract—Operational amplifiers (Op-Amp) are used in linear
AC operations and are widely used in electronic industry. What
follows are two operational amplifier designs using bipolar
junction Transistor (BJT) Technology and metal oxide
semiconductor field effect transistor (MOSFET) Technology.
These designs will focus in the input stage and gain stages. The
BJT will be modeled as an Op-Amp and characterized.


Index Terms—Operational amplifiers, Power electronics.
                                                                                  Fig. 1. Operational amplifier
                                                                               I designed the cascode current mirror for a current of 2mA
                          I. INTRODUCTION
                                                                               using the SSM2210 transistor arrays to bias the input stage and

A     N operational amplifier is made up of several transistors.
     The Bipolar Junction Transistor (BJT) is widely used with
different configurations, and different transistors for different
                                                                               the gain stage.

                                                                               VCC and VEE = ±20V.
models of op-amps. The op-amp has an inverting input and a                     RC1 = RC2 = 10k
non-inverting input with one output as in Fig. 1. The op-amp                   IC = 1mA
is powered by ±VDC.                                                            re' = 26
   Section II will have a BJT Design, Section III will show the
results of the simulation of the BJT design, Section IV will                          40v − 1.4v
have a MOSFET design, and Section V will conclude with a                       Ic =              = 2.14mA
few notes.                                                                              18kΩ
                                                                               The gain of the input stage is
                      II. BJT OP-AMP DESIGN
                                                                                       10kΩ
   I designed a three stage operation amplifier with BJT using a               Av1 =          = 192
cascode current mirror to bias the input stage and the gain                             2re '
stage. I added two emitter followers on the inputs to increase
input impedance. I also added emitter followers on the gain                    Input impedance is
stage to match impedances from the input stage. I used four
different transistors for this design.
                                                                               Zin = β × β × re'
   NTE912                SSM2210
      β1 = 100              β3 = 605                                           Zin = 100 × 100 × 26Ω
      VA = 100V             VA = 40V                                           Zin = 260kΩ
   SSM2210                 2N3906
                                                                               The common mode gain is
     β3 = 165                β4 = 300
                                                                                          − Rc
     VA = 40V                VA = 100V                                         ACM =
                                                                                        re'+2 RT
                                                                                               − 10kΩ
                                                                                       =
                                                                                         26Ω + 2 × 20kΩ * 605
                                                                                       = −0.000413
   Manuscript received March 20, 2008. This work was supported in part by
Oregon Institute of Technology.
   D. L. Longstreet is with the Oregon Institute of Technology, Portland, OR
97006 USA (corresponding author to provide phone: 503-866-5561; e-mail:
daniel.longstreet@oit.edu).
EET 323                                                                                                                              2

The common mode rejection ratio is
                  Av1           
   CMRR = 20 Log 
                  ACM           
                                 
                                                                            TABLE I – Characteristic of the BJT OP-Amp
   CMRR = 113dB                                                      Parameter       Condition        Dan's          Units
                                                                                                      OPAMP
                                                                     Input Offset    TA = 25°C        111            mV
                                                                     Voltage
   The gain stage consists of a differential pair with an active     Input Offset    TA = 25°C        200              A
load. The differential stage is biased with the cascode current      Current
mirror.                                                              Input Bias      TA = 25°C        9.1              A
                                                                     Current
The gain of this stage is the output resistance of the active load
                                                                     Input           TA = 25°C        400            k
divided by 2(Re+re'). Also I ran into the problem of reduce
                                                                     Resistance
voltage swing as the voltage at the emitters of the differential
                                                                     Output          VS = ±15V        ±5             V
amplifiers was not close to zero but was around 8.3V. I
                                                                     Voltage Swing RL ≥ 1k
centered my voltage around 14V for a max swing of ±6V.
                                                                     Output Short    TA = 25°C        45             mA
       40V                                                           Circuit Current
Ro =       = 40kΩ
       1mA                                                           CMRR            TA = 25°C        60             dB
                                                                                     f = 1 kHz
          40kΩ                                                       Bandwidth       TA = 25°C        2              MHz
Av 2 =           = 770                                               Slew Rate                        0.2            V/ s
         2 × 26Ω

                                                                       .
The output stage was design for low output impedance. I used
a common emitter to drop the voltage from 14V to around                                  IV. MOSFET DESIGN
1.4V and then used a Darlington pair to reduce my output
impedance. The DC out put component was 0.5V. This could
be adjusted by changing the amount of voltage drop across the        I was not as happy with the MOSFET OP-Amp Design as I had
common emitter amplifier in the previous stage.                      so difficulties with centering my voltage from the differential
Ignoring loading effect (as I believe that I can as I designed       gain stage. Besides that everything was straight forward. I
each stage accordingly) the over all calculated gain was about       designed a cascode current mirror for a current of 2mA. This
150,000.                                                             bias the differential pair and the active loads. I used the
                                                                     CD4007 transistor array to model my design.
                III. BJT OP-AMP SIMULATIONS                          N-Channel
                                                                     KP = 111
   After the design process was finished I build and tested my       Vto = 2v
design. I had problems getting the cascode current mirrors to
function correctly so a removed them and replace them with a         P-Channel
basic current mirror. This did reduce my CMRR but I was still        KP = 55
satisfied with the results. I look at the open loop gain,            Vto = -1.5V
measured the common mode gain and measured the input
                                                                     Id = k (Vgs − Vto )
                                                                                           2
impedance. I tested my design with a negative feedback
network with a gain of -10 and a non-inverting gain of 1. The        2mA = 111µ (Vgs − 2v )
                                                                                                 2

results can be seen if fig. XX in the appendix.
                                                                     Vgs = 6.24v
                                                                     Implementing a cascode current mirror the bias resistor is
                                                                               40 − 2 * 6.24
                                                                     Rbias =
                                                                                   2mA
                                                                     Rbias   = 13.76kΩ
                                                                     I modeled my design in LTSpice and got a simulated open loop
                                                                     gain of around 10,000. Also I connect a negative feed back
                                                                     network to control the gain with a gain of -10. as seen in Fig. 2.
                                                                     You can see in Fig. 3 that this design does not allow for more
                                                                     then 1.2Vp swing.
EET 323                                                            3




Fig. 2. MOSFET inverting amplifier Av = -10




Fig. 3. MOSFET inverting amplifier Av = -10




                          V. CONCLUSION
   There are a few things that I should have done differently in
the BJT design. I could have added emitter resistors to
increase the input impedance or I could have used the
SSM2210 with a Beta of 605 at 1mA. That would have
increased Zin to 9.5M . I should have picked transistors with
a higher early voltage to get more gain when used as an active
load and better CMRR when used as a current mirror. I still
need no learn more about voltage shifters and output stages to
improve the BJT design.
   I was not very satisfied with my MOSFET design but I do
understand the current mirror and active loads.
EET 323                           4



                               APPENDIX




Fig. 4. BJT OP-Amp Design




Fig. 5. MOSFET OP-Amp design
EET 323                                                                                                                       5




                                                     Fig. 9. BJT OP-Amp Measuring Slew Rate. SR = 0.2 v/ s
Fig. 6. BJT OP-Amp Open loop gain




                                                     Fig. 10. BJT OP-Amp Measuring Common mode gain ACM = 0.001

Fig. 7. BJT OP-Amp with negative feedback Av = -10




                                                     Daniel L. Longstreet is pursuing his Bachelor of Science in Electronic
                                                     Engineering Technology from the Oregon Institute of Technology in Portland,
                                                     OR USA and is expected to graduate June 2009. He also has an Associates of
                                                     Science in Industrial Electronics from the Technical College of the
Fig. 8. BJT OP-Amp Non-inverting Av = 1              LowCounrty Beaufort, SC. USA May 2005.
                                                     He is working at TriQuint Semiconductor in Hillsboro Oregon as a RF Test
                                                     Technician.

								
To top