Studi_Tentang_Struktur_Kristal_Bahan_Semikonduktor_Cd by keralaguest

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									A Study on Crystal Structure of Semiconductor Materials of Cd (Se, S)
                           and Cd (Se, S)

Name                  : Muhammad Ali Mukti
Student Number        : 04306141016
Consultants           : Dr. Ariswan and Edi Istiyono, M. Si.

                                        Abstract

        This study aims at determining effects of temperature and heat flow on crystal
structure, surface morphology and material chemical compositions of Cd (Se, S) and Cd
(Se, S) formed.
        Crystal growth was done by varying the temperature rise and the heat flow. The
temperatures of the material used in the preparation of Cd (Se, S) were 200°C, 500°C,
and 700°C. The preparation of Cd (Se, S) material was done in two stages. The first
phase was at a temperature of 400°C and the second one was at a temperature of 400°C
and 600°C. Crystal as the preparation result was characterized by XRD, SEM and
EDAX. XRD characterization was used to determine the crystal structure, SEM to
determine the surface morphology and EDAX to determine the chemical and crystal
compositions.
        XRD characterization results indicated that the formed materials of Cd (Se, S) and
Cd (Se, S) had hexagonal structure at temperatures of 600°C - 700°C with the lattice
parameter values for crystal of Cd (Se, S) were – and - while ones of Cd (Se, S) were –
and -. Results of SEM characterization showed that crystals of Cd (Se, S) and Cd (Se, S)
had been formed with the crystals’ grain size of 10mm. The EDAX characterization
results indicated that the comparison of chemical compositions of Crystal Cd (Se, S) was
Cd = 57.40%, Se = 26.03% and S = 9.19%, while for Crystal Cd (Se, S) was Cd =
47.27%, Se = 29.78% and S = 7.85%

Keywords      : Bridgman method, Cd (Se, S) and Cd (Se, S), solar cells, temperature
              rise
Year          : 2009

								
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