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SOI/Elastomer Microfabrication Process Aaron Gerratt and Dr. Sarah Bergbreiter Micro Robotics Laboratory Goals Process Characterization Develop a process for integrating a soft elastomer into an SOI Silicon and elastomer fabrication features delaminated Design mechanical devices for: between 0.8 and 1.6 MPa o storing and rapidly releasing energy under normal forces and o improving friction along surfaces of electrostatic inchworm between 40 and 70 kPa motors under shear forces. The o improving robustness of microrobot components difference between the two conditions can be attributed Silicon and Elastomer Fabrication Process to stress concentrations. 4) Stress-‐strain curves for Sylgard 184 Hysteresis curves for Sylgard 184 Bare SOI wafer DRIE silicon trenches 1) 5) SEM of the test structure used to SEM of test structure used to SEM of test structure used to DRIE elastomer trenches measure strain characteristics of the measure normal adhesion DRIE on backside measure shear adhesion elastomer 2) 6) Micromechanical Thrusters Refill trenches with elastomer Release of buried oxide 3) Silicon Photoresist Silicon dioxide Elastomer Planarize elastomer to silicon surface Micromechanical silicon and elastomer thruster Superimposed screenshots of a thruster kicking a 2 mg resistor and a schematic showing the thruster setup 1 is at 0 ms, 2 is at 8 ms, 3 is at 12 ms, 4 is at 17 ms, and 5 is at 23 ms Step 1 Step 3 Step 4 Step 6 Micromechanical Hinges Future Work Motor Spring Solar Cells/ 4-‐bit MicrocontrollerPower Supply Manipulation of a silicon cantilever and elastomer hinge with a probe Develop new generation of Work supported by a DARPA Young Faculty Award. robust, jumping microrobots Silicon trenches that have been refilled Silicon and elastomer features with elastomer at an aspect ratio fabricated together in-‐plane References A. Gerratt, I. Penskiy Micromechanisms Hilton Head 2010, Hilton Head, SC, June 6-‐10, 2010. greater than 20:1 A. Gerratt, I. Penskiy, S -‐ -‐8, 2010. A. Gerratt, I. Penskiy, S PowerMEMS 2009, Washington, DC, December 1-‐4, 2009.
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