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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT” ZHCS500
ISSUE 1- September 1997 7
FEATURES:
• Low V F 1
C
• High Current Capability 2
1
APPLICATIONS:
• DC - DC converters A
• Mobile telecomms 3
• PCMCIA
PARTMARK DETAIL: ZS5 3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage VR 40 V
Forward Current (Continuous) IF 500 mA
Forward Voltage @ IF = 500mA VF 550 mV
Average Peak Forward Current; D.C. = 50% IFAV 1000 mA
Non Repetitive Forward Current t≤100µs IFSM 6.75 A
3 A
t≤10ms
Power Dissipation at Tamb= 25° C Ptot 330 mW
Storage Temperature Range Tstg -55 to + 150 °C
Junction Temperature Tj 125 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V (BR)R 40 60 V IR= 200µA
Voltage
Forward Voltage VF 270 300 mV IF= 50mA*
300 350 mV IF= 100mA*
370 460 mV IF= 250mA*
465 550 mV IF= 500mA*
550 670 mV IF= 750mA*
640 780 mV IF= 1000mA*
810 1050 mV IF= 1500mA*
440 mV IF= 500mA, Tamb= 100° C*
Reverse Current IR 15 40 µA V R= 30V
Diode Capacitance CD 20 pF f= 1MHz,V R= 25V
Reverse Recovery trr 10 ns switched from
Time IF = 500mA to IR = 500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2% .
ZHCS500
TYPICAL CHARACTERISTICS
1 100m
10m
IF - Forward Current (A)
IR - Reverse Current (A)
+125°C
1m
+100°C
100m
100u +50°C
10u
+25°C
1u
10m +125°C
+25°C
-55°C 100n
10n -55°C
1m 1n
0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40
VF - Forward Voltage (V) VR - Reverse Voltage (V)
IF v VF IR v VR
0.6 0.4
t 1
PF(av) - Avg Pwr Diss (W)
DC D=t 1/t p Tj=125°C
IF(av) - Avg Fwd Cur (A)
I F(pk)
D=0.5 t
0.3
p
0.4
I F(av) =DxI F(pk)
PF(av) =I xV
D=0.2 F(av) F
0.2
t 1
D=t 1/t p
0.2 D=0.1
I F(pk)
0.1
D=0.05 DC t
p
DC=0.5
DC=0.2 I F(av) =DxI F(pk)
DC=0.1
DC=0.05 PF(av) =I xV
0 0 F(av) F
100 105 110 115 120 125 0 0.1 0.2 0.3 0.4 0.5 0.6
TC - Case Temperature (°C) IF(av) - Avg Fwd Curr (A)
IF(av) v TC PF(av) v IF(av)
125 90
CD - Diode Capacitance (pF)
Ta - Ambient Temp (°C)
Rth=100° C/W
Rth=200°C/W
Rth=300°C/W 50
95
65 0
1 10 100 0 10 20 30 40
VR - Reverse Voltage (V) VR - Reverse Voltage (V)
Ta v VR CD v VR
ZHCS500
TYPICAL CHARACTERISTICS
300
p
D=1 t 1
D=t 1/t
RTHj-a (°C/W)
t p
200
D=0.5
100
Single Pulse
D=0.2
D=0.1
D=0.05
0
100u 1m 10m 100m 1 10 100
Pulse Width (s)
