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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
Y
I NAR
REL
IM l sp
ecif ct to c
fina e subje
icat
ion. ange.
h
M63815P/FP/KP
P ice:
is n
m
ot a its ar
This etric li
m
Not e para
Som 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION PIN CONFIGURATION
M63815P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transis- IN1→ 1 18 →O1
tors. Both the semiconductor integrated circuits perform IN2→ 2 17 →O2
high-current driving with extremely low input-current supply.
IN3→ 3 16 →O3
IN4→ 4 15 →O4
INPUT OUTPUT
IN5→ 5 14 →O5
IN6→ 6 13 →O6
FEATURES IN7→ 7 12 →O7
q Three package configurations (P, FP, and KP) IN8→ 8 11 →O8
q Medium breakdown voltage (BVCEO ≥ 35V) →COM COMMOM
GND 9 10
q Synchronizing current (IC(max) = 300mA)
q With clamping diodes
Package type 18P4G(P)
q With zener diodes
q Low output saturation voltage
q Wide operating temperature range (Ta = –40 to +85°C)
NC 1 20 NC
IN1→ 2 19 →O1
IN2→ 3 18 →O2
IN3→ 4 17 →O3
APPLICATION IN4→ 5 16 →O4
Driving of digit drives of indication elements (LEDs and INPUT OUTPUT
IN5→ 6 15 →O5
lamps) with small signals
IN6→ 7 14 →O6
IN7→ 8 13 →O7
IN8→ 9 12 →O8
GND 10 11 →COM COMMOM
FUNCTION NC : No connection
The M63815P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided be- 20P2N-A(FP)
tween each output pin (collector) and COM pin. The transis- Package type 20P2E-A(KP)
tor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maxi-
mum of 35V voltage can be applied between the collector CIRCUIT DIAGRAM
and emitter. COM
OUTPUT
Vz=7V
INPUT
10.5K
10K
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: Ω
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
Y
IM I NAR icat
ion. ange.
M63815P/FP/KP
REL
h
ecif ct to c
l sp
fina e subje
P ice:
is n
m
ot a its ar
This etric li
m
Not e para
Som 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85 °C)
Symbol Parameter Conditions Ratings Unit
V CEO Collector-emitter voltage Output, H –0.5 ~ +35 V
IC Collector current Current per circuit output, L 300 mA
VI Input voltage –0.5 ~ +35 V
IF Clamping diode forward current 300 mA
VR Clamping diode reverse voltage 35 V
M63815P 1.79
Pd Power dissipation Ta = 25°C, when mounted M63815FP 1.10 W
on board M63815KP 0.68
Topr Operating temperature –40 ~ +85 °C
T stg Storage temperature –55 ~ +125 °C
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Limits
Symbol Parameter Test conditions Unit
min typ max
VO Output voltage 0 — 35 V
Duty Cycle no more than 50% 0 — 250
Collector current M63815P
Duty Cycle no more than 100% 0 — 170
(Current per 1 cir-
Duty Cycle no more than 30% 0 — 250
IC cuit when 8 circuits M63815FP mA
Duty Cycle no more than 100% 0 — 130
are coming on si-
Duty Cycle no more than 12% 0 — 250
multaneously) M63815KP
Duty Cycle no more than 100% 0 — 100
VIN Input voltage 0 — 30 V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Limits
Symbol Parameter Test conditions Unit
min typ max
V (BR) CEO Collector-emitter breakdown voltage ICEO = 10µA 35 — — V
IIN = 1mA, IC = 10mA — — 0.2
VCE(sat) Collector-emitter saturation voltage V
IIN = 2mA, IC = 150mA — — 0.8
VIN(on) “On” input voltage IIN = 1mA, IC = 10mA 13 19 23 V
VF Clamping diode forward volltage IF = 250mA — 1.2 2.0 V
IR Clamping diode reverse current VR = 35V — — 10 µA
h FE DC amplification factor VCE = 10V, IC = 10mA 50 — — —
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Limits
Symbol Parameter Test conditions Unit
min typ max
ton Turn-on time — 140 — ns
CL = 15pF (note 1)
toff Turn-off time — 240 — ns
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
Y
IM icat I NAR
ion. ange.
M63815P/FP/KP
REL
h
ecif ct to c
l sp
fina e subje
P ice:
is n
m
ot a its ar
This etric li
m
Not e para
Som 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
NOTE 1 TEST CIRCUIT TIMING DIAGRAM
INPUT Vo
50% 50%
Measured device RL INPUT
OPEN
PG OUTPUT
OUTPUT
50Ω CL 50% 50%
ton toff
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 18V
(2)Input-output conditions : RL = 220Ω, Vo = 35V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics Input Characteristics
2.0 4
M63815P
Power dissipation Pd (W)
1.5 3
Input current II (mA)
Ta = –40°C
M63815FP
Ta = 25°C
1.0 2
0.931
M63815KP
0.572
0.5 1
0.354 Ta = 85°C
0 0
0 25 50 75 85 100 0 5 10 15 20 25 30
Ambient temperature Ta (°C) Input voltage VI (V)
Duty Cycle-Collector Characteristics Duty Cycle-Collector Characteristics
(M63815P) (M63815P)
400 400
Collector current Ic (mA)
Collector current Ic (mA)
300 1~5 300 1~3
6
7 4
8
5
200 200 6
7
8
•The collector current values •The collector current values
100 represent the current per circuit. 100 represent the current per circuit.
•Repeated frequency ≥ 10Hz •Repeated frequency ≥ 10Hz
•The value the circle represents the value of •The value the circle represents the value of
the simultaneously-operated circuit. the simultaneously-operated circuit.
•Ta = 25°C •Ta = 85°C
0 0
0 20 40 60 80 100 0 20 40 60 80 100
Duty cycle (%) Duty cycle (%)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
Y
IM icat I NAR
ion. ange.
M63815P/FP/KP
REL
h
ecif ct to c
l sp
fina e subje
P ice:
is n
m
ot a its ar
This etric li
m
Not e para
Som 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics Duty Cycle-Collector Characteristics
(M63815FP) (M63815FP)
400 400
Collector current Ic (mA)
Collector current Ic (mA)
300 1~3 300 1
4 2
5
6 3
200 7 200
8 4
5
67
8
•The collector current values •The collector current values
100 represent the current per circuit. 100 represent the current per circuit.
•Repeated frequency ≥ 10Hz •Repeated frequency ≥ 10Hz
•The value the circle represents the value of •The value the circle represents the value of
the simultaneously-operated circuit. the simultaneously-operated circuit.
•Ta = 25°C •Ta = 85°C
0 0
0 20 40 60 80 100 0 20 40 60 80 100
Duty cycle (%) Duty cycle (%)
Duty Cycle-Collector Characteristics Duty Cycle-Collector Characteristics
(M63815KP) (M63815KP)
400 400
Collector current Ic (mA)
Collector current Ic (mA)
300 1~2 300 1
3
4 2
200 200
5 3
6
7 4
8
5
•The collector current values •The collector current values 67
100 represent the current per circuit. 100 represent the current per circuit. 8
•Repeated frequency ≥ 10Hz •Repeated frequency ≥ 10Hz
•The value the circle represents the value of •The value the circle represents the value of
the simultaneously-operated circuit. the simultaneously-operated circuit.
•Ta = 25°C •Ta = 85°C
0 0
0 20 40 60 80 100 0 20 40 60 80 100
Duty cycle (%) Duty cycle (%)
Output Saturation Voltage Output Saturation Voltage
Collector Current Characteristics Collector Current Characteristics
250 100
Ta = 25°C IB = 2mA Ta = 25°C VI = 32V
IB = 3mA VI = 28V
200 IB = 1.5mA 80
Collector current Ic (mA)
Collector current Ic (mA)
VI = 24V
VI = 20V
IB = 1mA VI = 16V
150 60
40 VI = 12V
100
IB = 0.5mA
50 20
0 0
0 0.2 0.4 0.6 0.8 0 0.05 0.10 0.15 0.20
Output saturation voltage VCE(sat) (V) Output saturation voltage VCE(sat) (V)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
Y
IM icat I NAR
ion. ange.
M63815P/FP/KP
REL
h
ecif ct to c
l sp
fina e subje
P ice:
is n
m
ot a its ar
This etric li
m
Not e para
Som 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Output Saturation Voltage DC Amplification Factor
Collector Current Characteristics Collector Current Characteristics
100 103
II = 2mA VCE 10V
7 Ta = 25°C
5
DC amplification factor hFE
80
Collector current Ic (mA)
Ta = –40°C Ta = 25°C 3
2
60 Ta = 85°C
102
40 7
5
3
20
2
0 101
0 0.05 0.10 0.15 0.20 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Output saturation voltage VCE(sat) (V) Collector current Ic (mA)
Grounded Emitter Transfer Characteristics Grounded Emitter Transfer Characteristics
50 250
VCE = 4V VCE = 4V
40 200
Collector current Ic (mA)
Collector current Ic (mA)
30 150
Ta = 25°C
Ta = 85°C Ta = 25°C
20 100
Ta = 85°C
Ta = –40°C Ta = –40°C
10 50
0 0
0 2 4 6 8 10 12 0 4 8 12 16 20
Input voltage VI (V) Input voltage VI (V)
Clamping Diode Characteristics
250
Forward bisa current IF (mA)
200
150
Ta = 85°C
100
Ta = 25°C Ta = –40°C
50
0
0 0.4 0.8 1.2 1.6 2.0
Forward bias voltage VF (V)
Jan. 2000
