Silicon Switching Diode Array BGX

					Silicon Switching Diode Array                                                            BGX 50 A

q    Bridge configuration
q    High-speed switch diode chip




Type                Marking        Ordering Code             Pin Configuration          Package1)
                                   (tape and reel)
BGX 50 A            U1s            Q62702-G38                                           SOT-143




Maximum Ratings per Diode
Parameter                                          Symbol            Values         Unit
Reverse voltage                                    VR                50             V
Peak reverse voltage                               VRM               70
Forward current                                    IF                140            mA
Total power dissipation, TS = 74 ˚C                Ptot              210            mW
Junction temperature                               Tj                150            ˚C
Storage temperature range                          Tstg              – 65 … + 150

Thermal Resistance
Junction - ambient2)                               Rth JA            ≤   640        K/W
Junction - soldering point                         Rth JS            ≤   360




1)   For detailed information see chapter Package Outlines.
2)   Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.


Semiconductor Group                               1                                            5.91
                                                                                      BGX 50 A




Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter                                        Symbol                Values           Unit
                                                             min.       typ.    max.

DC characteristics
Forward voltage per diode                        VF          –          –       1.3     V
IF = 100 mA
Reverse current per diode                        IR                                     µA
VR = 50 V                                                    –          –       0.2
VR = 50 V, TA = 150 ˚C                                       –          –       100

AC characteristics
Diode capacitance                                CD          –          –       1.5     pF
VR = 0, f = 1 MHz
Reverse recovery time                            trr         –          –       6       ns
IF = 10 mA, IR = 10 mA, RL = 100 Ω
measured at IR = 1 mA

Test circuit for reverse recovery time




Pulse generator: tp = 100 ns, D = 0.05       Oscillograph:       R = 50 Ω
                 tr = 0.6 ns, Rj = 50 Ω                          tr = 0.35 ns
                                                                 C ≤ 1 pF




Semiconductor Group                          2
                                                                          BGX 50 A




Forward current IF = f (TA*; TS)       Reverse current IR = f (TA)
* Package mounted on epoxy




Forward current IF = f (VF)            Peak forward current IFM = f (t)
TA = 25 ˚C                             TA = 25 ˚C




Semiconductor Group                3
                                  BGX 50 A




Forward voltage VF = f (TA)




Semiconductor Group           4