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DPSIRPUTPTIMP45220-45220specs

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DPSIRPUTPTIMP45220-45220specs Powered By Docstoc
					                                        SPECIFICATIONS
SPUTTERING SYSTEM FOR MULTILAYER COATING                                          QUANTITY: ONE
For operation in class 10,000 clean room
    This system is required for facet coating of semiconductor laser diode with multilayer coatings of
following materials.
       Deposition of oxides: Al2O3, Ta2O5, SiO2, TiO2 , LuOx, HfO2, and Si3N4 using O2 and N2 gases.
The vacuum subsystem of the sputtering unit are as follows :
             1. VACUUM CHAMBER
             2. VACUUM PUMPING SYSTEM FOR DEPOSITION CHAMBER
             3. LOAD LOCK CHAMBER
             4. GAS DELIVERAY LINES
             5. SUBSTRATE HOLDER
             6. THICKNESS MONITOR
             7. SPUTTER CATHODES
             8. DC AND RF POWER SUPPLIES
             9. CONTROL CONSOLE
            10. COOLING WATER LINES
            11. SAFETY FEATURE
(1). VACUUM CHAMBER:
            Volume of the deposition chamber :  100 liters (or the nearest standard).
           a)
            Leak rate of the chamber : Less than 5x10-9 mbar Lit/sec of He
           b)
            Base Pressure: 5 x 10-7 mbar (under clean dry conditions)
           c)
            Time to achieve ultimate base pressure: approx. two hours or less.
           d)
            Material of construction: SS304L.
           e)
            The chamber body should have a provision of heating arrangement for baking the system upto
           f)
            150oC.
         g) View port with shutter: Three view port along with shutter to view sample and magnetron sources.
                                  Two spare ports (CF40) for future upgradation.
         h) There should be a provision to transfer the 2inch substrate into the chamber through a load lock
            arrangement.
(2). VACUUM PUMPING SYSTEM FOR THE DEPOSITION CHAMBER:
         The pumping system consisting of a suitable pumping speed turbo molecular pump (TMP) backed by dry
vacuum pump. This should ensure an ultimate vacuum of the deposition chamber of 5X10-7 mbar in less than 2 hrs.
         The vacuum pumping system should be able to handle high gas load condition (100sccm) during the
sputtering process. Suitable vacuum monitoring gauges during pre pumping and during sputtering should be
provided. Details of the vacuum pumping system including make should be specified
            a) Roughing and Backing valves: The roughing and backing valves should be pneumatically operated
               with their OPEN/CLOSE controls in the control console. Alternately TMP & PLC logic based
               vacuum system with suitable valves should be quoted. Make of the valves should be specified
            b) Pressure control/vacuum valve: PID controlled motorized gate valve between Process Chamber and
               Turbo Molecular Pumping stage
           c) System vent valve: There should be a vent valve with interlock to vent the system on the
              requirements of the user.
 (3). LOAD LOCK CHAMBER :
           a) Material of construction: SS304 or Aluminum alloy
           b) Volume of the chamber  10 liters (or the nearest standard)
           c) Substrate manipulator: There should be a manually operated substrate manipulator to transfer the
              sample of 2” into the deposition chamber.
           d) Ultimate vacuum of the load lock chamber: 5x10-5 mbar under clean dry and cold conditions in
              approx. 15minutes or less.
           e) One view port on the load-lock chamber body to view the sample inside the chamber.
           f) There should be a separate pumping system for load lock chamber based on TMP backed by suitable
              oil free dry vacuum pump and suitable vacuum gauges.
           g) An isolation valve should be present between the pump and the load lock chamber with its
              OPEN/CLOSE control in the control console. The design should be such that in the event of a power
              failure, the isolation valve switches off automatically thereby isolating the load lock chamber.
           h) Manual gate valve between process chamber and load-lock chamber.
           i) Transfer arms to transfer 2inch wafer from load lock to process chamber.
(4). GAS DELIVERAY LINES:
           a) It should be an SS316L gas manifold for handling 3 gases.
           b) The gases planned to be used in this manifold are: Argon, O2, N2.
           c) All the gas lines should be made SS 316L tubes of electro polished from inside.
           d) All the lines should have one independent mass flow controller with flow range of 0 to 20sccm (or
              the nearest standard) with calibration for N2 gas flow.
           e) All three mass flow controllers should be of the normally close (NC) type ie, when not powered,
              there should be no flow of gas.
           f) The mass flow controllers should be operable at an input pressure range of 1 to 3bars or nearest
              standard.
           g) There should be N2 gas actuated valves in each line to switch ON/OFF the gas supply.
           h) The user should be able to control the flow of the gases through the mass flow controllers from a
              common control console.
           i) The user should also be able to switch ON/OFF the valves from a common control console.
           j) All the lines and components should be fitted with original double ferrule connectors only.
           k) The complete gas manifold should be independently leak checked to better than 5x10-9 Torr lit/sec of
              He.
(5). SUBSTRATE HOLDER:
            a) The substrate holder should be able to hold and uniformly heat, 2 inch diameter substrate.
            b) There should be an arrangement for holding samples of sizes less than 2” diameter using a spring
               clip arrangement.
            c) The substrate stage should have PID controlled resistive heating from ambient to 400oC (±2oC ) with
               K type thermocouple.
            d) Substrate stage should have provision for 0-30 rpm controlled rotation and manual Z shift within
               50mm vertical movement.
            e) Substrate stage should have quick release pneumatic substrate shutter.
            f) In addition to the resistive heater, there should also be a provision for a PID controlled quartz lamp
               heating arrangement in the chamber for sample heating.


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             g) Provision for precleaning the 2inch substrate by ion source.
(6). THICKNESS MONITOR :
              a) A water cooled quartz crystal sensor should be located inside of the chamber with thickness process
                 controller on the front panel, which should have digital display for the rate of the deposition and
                 thickness. The monitoring of the quartz crystal should be compatible with plasma environment.
              b) The process controller should be programmable with shutter and source open/close sequence for
                 multi layers deposition.
              c) Deposition rate :  1Å/sec (or the nearest standard)
              d) Deposition rate accuracy better than 0.2Å/sec (or the nearest standard)
              e) Frequency resolution 0.05Hz @ 6MHz.
              f) Please quote separately for optical reflectivity based thickness controller and monitor.
(7). SPUTTER CATHODES :                                                                      Quantity: three
              a) Three magnetron sputter sources of 2inch (target size) in confocal geometry with cross
                 contamination shielding and placed in sputter up configuration.
              b) Shutter for all three individual magnetron sputter sources.
              c) The source should be capable of receiving both DC and RF power with water cooling facilities.
              d) We should be able to mount through a standard port with variable height and head angle geometry.
              e) One of these heads should have a high strength magnet pack for magnetic materials.
(8). POWER SUPPLIES:
           DC power supply:                                                                   Quantity: one
              a) 1000W constant voltage output power supply (or the nearest standard).
              b) Display for power delivered, control mode current, voltage or power setpoints
              c) The power output should be controlled via front panel of the control console along with interlocks.
          RF power supply:                                                                   Quantity: two
              a) Maximum power output of the system: 300 Watts or the nearest higher standard.
              b) The power output should be adjustable from the power supply panel in steps of 10 Watts (or lower)
                 from zero to maximum output power of the supply.
              c) Frequency of operation: 13.56 MHz.
              d) Adequate shielding should be present in the power supply so that RF power leakage should not
                 exceed 1mW/cm2 at a point 25cm away from the external surface. A certificate by an international
                 authorized agency must be provided.
              e) The supply should have an auto matching network.
              f) The output of the power supply should be fed into the above deposition chamber through a flexible
                co-axial cable along with interlocks.
          Plasma switch:
                 RF and DC switch which can allow redirecting power supply units for any source and substrate bias
               from the control console along with interlocks.
(9). CONTROL CONSOLE:
        There should be a standalone console that has the controls for all the components of the system. These
     should include the following:
             a) Mains power ON/OFF
             b) Switches for all the pumps both for the load lock and the deposition chamber
             c) Panel to show the pressures from all the digital gauges (high and low pressures).
             d) Panel to show substrate temperature.
             e) DC and RF power supply and its control unit.


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           f) The controls for the setting the values of the flows of all the three MFCs and the switching of the N2
               actuated values on the gas lines in the gas supply manifold.
           g) OPEN/CLOSE control for the valves used for the deposition chamber, and in the load lock chamber
           h) Vacuum cycle, process parameter control should have both manual mode as well as computer
               control mode for operation and data acquisition.
(10). COOLING WATER LINE:
           a) There should be central inlet manifold from where the water lines to all the individual components
               should be provided.
           b) Similarly, the outlet water should also leave the system through a single outlet manifold. Water flow
               sensors should be placed for each individual component.
(11). SAFETY FEATURES:
           a) There should be water flow switch individually for all the components that require cooling. In the
               event of low water flow or missing water supply, the flow switch should be able to provide a signal
               which should in-turn switch off the required instrument.
           b) All the motors should have an over-current and thermal overload trip. After the correction of the
               fault that results in a trip, the system should be able to start only on manual reset.
PLEASE ALSO QUOTE FOR FOLLOWING ITEMS AS OPTIONAL :
        Target materials :
           a. One set of Al2O3, Ta2O5, Si, HfO2, LuOx SiO2, Si3N4 and TiO2 target materials of 2 inch target
               diameter and thickness 4mm (or the nearest standard).
           b) These targets should have provision to load on the above sputter cathodes.
           c) Purity of these targets 99.99%.
PLEASE NOTE THE FOLLOWING POINTS :
       1. Supplier must provide a list of existing customers along with contact details indicating the person
          concerned who can be contacted for verifications, who have already used or are using similar thin film
          sputtering system.
      2. The complete conceptual drawings of the system should be provided along with the quotation.
      3. The supplier should also provide hardcopy of the operation and maintenance manual for all the
          individual components inside the system.
      4. Pre dispatch inspection will be carried out by RRCAT scientist at company’s factory before dispatch of
          the system. The system should be installed and commissioned by the company engineer at our site.
      5. The complete system should be placed either on a powder coated MS frame or aluminum frame which
          should be fully compatible with class10000 clean room.
      6. The system should work on 220V, 50 Hz single phase or 415V, 50 Hz 3 phase. The total peak power
          consumption of all the sub systems put together should not exceed 8-10KVA.
      7. Please note that the user will provide the required facilities of water and the process gas lines. The details
          of all the infrastructural requirements should be mentioned clearly in the quotation.
      8. Warranty of at least one year after installation and acceptance must be provided for all subsystem as well
          as the complete system.
      9. Please quote separately for any spares for the system that are required for three years of the operation of
          the system after expiry of warranty period.
      10. Please quote for AMC for three years after expiry of warranty.
      11. The system should be installed at RRCAT site by trained engineers from the principal company. They
          should also provide training to two RRCAT engineers/scientists at RRCAT for two to three days after
          the installation of the system.


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      12. Test certificates of the equipment and the sub-systems of the equipment duly signed by the supplier
          should also be supplied.
Acceptance criteria:
 The supplier should demonstrate at company premises, before the dispatch of the system and after installation at
RRCAT:
      1. Vacuum of the process chamber better than 5X10-7mbar in approx. two hours or less.
      2. Vacuum of the load lock chamber 5X10-5mbar in approx. 15minutes or less.
      3. Leak rate of the process chamber less than 5x10-9 Torr Lit/sec of He.
      4. Uniformity of deposited materials of 200nm thickness (Al2O3, Ta2O5, SiO2, TiO2, LuOx, HfO2, and
          Si3N4) over 2inch substrate region should be within ±2.5%.
      5. Uniformity of multilayer for sequential deposition of Al2O3(200nm)/Si(200nm) layer on Si substrate
          over 2inch substrate region should be within ±2.5%.




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