# 10C. Study of Charac-of Insulated Gate Bipolar

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```					CIRCUIT DIAGRAM FOR STUDY OF CHARACTERISTICS OF
INSULATED GATE BIPOLAR TRANSISTOR:
STUDY OF CHARACTERISTICS OF
INSULATED GATE BIPOLAR TRANSISTOR
AIM:

To Obtain and verify the output and transfer characteristics of Insulated Gate
Bipolar transistor (IGBT).

APPARATUS:

S.No.                 Apparatus                   Range          Type       Quantity
1.        Insulated Gate Bipolar transistor                     …..          1
2.         Dual Channel regulated Power        (0-36V)          …            1
supply
3.                Ammeter                   (0-10mA)        MC             2
4.                Voltmeter                  (0-35V)        MC             1
5.              Potentiometer              (0-10 K )       …              1
(0-2.7 K )
6.             Connecting wires                ….           …..      Required No.

THEORY:

IGBT called Insulated Gate Bipolar transistor. It is constructed as in the same
manner of Power MOSFET. Major difference is that in the Power MOSFET the n+
layer substrate at the drain is present and in IGBT it is substituted by a P + layer
substrate called collector.
The 3 layers P+, n- and P constitute a PNP transistor and n-, P, n+ forms an
NPN transistor. Here n- is base for PNP and collector for NPN and P is collector for
PNP and base for NPN transistor.

PRECAUTIONS:

1.        Do not keep rheostats in minimum position.
2.        Observe the turn ON time without any parallax error.

PROCEDURE:

1.        Make the connections as per the circuit diagram
2.        Vary the input voltage (VGE) in steps and not the corresponding output current
3.        Plot the graph between VGE and IC.
4.        Keep the input voltage (V GE) constant, output voltage (VGE) is varied and note
the corresponding output current.
5.        Plot the output characteristics by taking VCE and I C on suitable axes.
TABULAR COLUMN:

Transfer Characte ristics of IGBT:

S.No.           VGE ( Volts)                    IC (mA)
1.                1.2                            0.3
2.                2.8                            0.3
3.                3.2                            0.3
4.                4.0                            0.3
5.                5.6                            0.6
6.                6.0                            6.3

Transfer Characte ristics of IGBT:

VGE 1 =2V                    VGE 2 = 4V
S.No.
VCE (V) IC (mA)         VCE (V)         IC (mA)
1.       22          0.3            15               0.1
2.       24         0.35            19               0.2
3.       30          0.4            23              0.25
4.       34          0.4            26               0.3
5.       36          0.4            30              0.35
6.                   0.4            38               0.4
7.                                  40               0.4

RESULT:

Hence obtained and studied the transfer and out put characteristics of IGBT.

CONCLUSION:

From the experiment, it is concluded that IGBT acts as OFF switch up to knee
voltage and after that it acts as ON switch.

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