NDS0605

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					                                                                                                                                                       NDS0605
                                                                                                                                   July 2002




NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description                                                                   Features
These P-Channel enhancement mode field effect                                         • −0.18A, −60V. RDS(ON) = 5 Ω @ VGS = −10 V
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high                                    • Voltage controlled p-channel small signal switch
density process has been designed to minimize on-                                     • High density cell design for low RDS(ON)
state resistance, provide rugged and reliable
performance and fast switching. They can be used, with                                •     High saturation current
a minimum of effort, in most applications requiring up to
180mA DC and can deliver current up to 1A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.




                                 D                                                                                    D




                                                           S
                                                                                                          G                 S

                 SOT-23
                                             G

  Absolute Maximum Ratings                                     TA=25oC unless otherwise noted

  Symbol                                       Parameter                                                      Ratings                   Units
  VDSS                 Drain-Source Voltage                                                                      −60                        V
  VGSS                 Gate-Source Voltage                                                                       ±20                        V
  ID                   Drain Current        – Continuous                         (Note 1)                       −0.18                       A
                                            – Pulsed                                                              −1
  PD                   Maximum Power Dissipation                                 (Note 1)                        0.36                    W
                       Derate Above 25°C                                                                          2.9                   mW/°C
  TJ, TSTG             Operating and Storage Junction Temperature Range                                       −55 to +150                  °C
                       Maximum Lead Temperature for Soldering
  TL                                                                                                             300                       °C
                       Purposes, 1/16” from Case for 10 Seconds

  Thermal Characteristics
  RθJA                 Thermal Resistance, Junction-to-Ambient                   (Note 1)                        350                     °C/W

  Package Marking and Ordering Information
       Device Marking                         Device                  Reel Size                           Tape width                Quantity
                65D                          NDS0605                       7’’                                 8mm                 3000 units




2002 Fairchild Semiconductor Corporation                                                                                          NDS0605 Rev B1(W)
                                                                                                                                                                    NDS0605
     Electrical Characteristics                                            TA = 25°C unless otherwise noted

     Symbol                             Parameter                                   Test Conditions                       Min Typ Max               Units

     Off Characteristics
     BVDSS                Drain–Source Breakdown Voltage                   VGS = 0 V,     ID = –10 µA                     –60                           V
     ∆BVDSS               Breakdown Voltage Temperature                    ID = –10 µA,Referenced to 25°C                                            mV/°C
                                                                                                                                 –53
       ∆TJ                Coefficient
     IDSS                 Zero Gate Voltage Drain Current                  VDS = –48 V,        VGS = 0 V                                  –1           µA
                                                                           VDS = –48 V,VGS = 0 V TJ = 125°C                             –500           µA
     IGSS                 Gate–Body Leakage.                               VGS = ±20 V,        VDS = 0 V                                ±100           nA

     On Characteristics                       (Note 2)
     VGS(th)              Gate Threshold Voltage                           VDS = VGS,          ID = –250 µA               –1     –1.7     –3            V
     ∆VGS(th)             Gate Threshold Voltage                           ID = –250 µA,Referenced to 25°C                        3                  mV/°C
      ∆TJ                 Temperature Coefficient
     RDS(on)              Static Drain–Source                              VGS = –10 V, ID = –0.5 A                              1.0      5.0           Ω
                          On–Resistance                                    VGS = –4.5 V, ID = –0.25 A                            1.3      7.5
                                                                           VGS = –10 V,ID = –0.5 A,TJ=125°C                      1.7      10
     ID(on)               On–State Drain Current                           VGS = –10 V, VDS = – 10 V                      –0.6                          A
     gFS                  Forward Transconductance                         VDS = –10V,         ID = – 0.2 A               0.07   0.43                   S

     Dynamic Characteristics
     Ciss                 Input Capacitance                                VDS = –25 V,        V GS = 0 V,                       79                    pF
     Coss                 Output Capacitance                               f = 1.0 MHz                                           10                    pF
     Crss                 Reverse Transfer Capacitance                                                                            4                    pF
     RG                   Gate Resistance                                  VGS = –15 mV, f = 1.0 MHz                             10                     Ω

     Switching Characteristics                           (Note 2)
     td(on)               Turn–On Delay Time                               VDD = –25 V,        ID = – 0.2 A,                     2.5       5           ns
     tr                   Turn–On Rise Time                                VGS = –10 V,        RGEN = 6 Ω                        6.3     12.6          ns
     td(off)              Turn–Off Delay Time                                                                                    10       20           ns
     tf                   Turn–Off Fall Time                                                                                     7.5      15           ns
     Qg                   Total Gate Charge                                VDS = –48 V,        ID = –0.5 A,                      1.8      2.5          nC
     Qgs                  Gate–Source Charge                               VGS = –10 V                                           0.3                   nC
     Qgd                  Gate–Drain Charge                                                                                      0.4                   nC

     Drain–Source Diode Characteristics and Maximum Ratings
                                                                                                                                           –
     IS                   Maximum Continuous Drain–Source Diode Forward Current                                                                         A
                                                                                                                                         0.18
     VSD                  Drain–Source Diode Forward                       VGS = 0 V,          IS = –0.5 A(Note 2)               –0.8    –1.5           V
                          Voltage
     trr                  Diode Reverse Recovery Time                      IF = –0.5A                                            17                    nS
     Qrr                  Diode Reverse Recovery Charge                    diF/dt = 100 A/µs                   (Note 2)          15                    nC

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
           the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.


                                 a) 350°C/W when mounted on a
                                    minimum pad..



Scale 1 : 1 on letter size paper


2.         Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%




                                                                                                                                                NDS0610 Rev B1(W)
                                                                                                                                                                                                                                                                                                                 NDS0605
Typical Characteristics


                                         1.4                                                                                                                                                      2.2
                                                     VGS=-10V              -4.5V
                                                                                          -4.0V
                                                       -6.0V




                                                                                                                                            DRAIN-SOURCE ON-RESISTANCE
                                         1.2                                                                                                                                                                2
                                                                                                                                                                                                                      VGS=-3.0V
             -ID, DRAIN CURRENT (A)




                                                                                                           -3.5V




                                                                                                                                                 RDS(ON), NORMALIZED
                                          1                                                                                                                                                       1.8

                                         0.8                                                                                                                                                      1.6
                                                                                                                                                                                                                                   -3.5V
                                         0.6                                                                            -3.0V                                                                     1.4                                         -4.0V
                                                                                                                                                                                                                                                           -4.5V
                                         0.4                                                                                                                                                      1.2                                                                    -6.0V
                                                                                                                                                                                                                                                                                     -10V
                                         0.2                                                                                 -2.5V
                                                                                                                                                                                                            1

                                          0                                                                                                                                                       0.8
                                               0             1             2               3               4             5           6                                                                           0         0.2              0.4        0.6         0.8           1            1.2          1.4
                                                                 -VDS, DRAIN TO SOURCE VOLTAGE (V)                                                                                                                                                -ID, DRAIN CURRENT (A)



                                               Figure 1. On-Region Characteristics.                                                                                                                         Figure 2. On-Resistance Variation with
                                                                                                                                                                                                               Drain Current and Gate Voltage.

                                         1.8                                                                                                                                                                5

                                                     ID = -0.5A                                                                                                                                                                                                                              ID = -0.25A
DRAIN-SOURCE ON-RESISTANCE




                                         1.6         VGS = -10V
                                                                                                                                                                             RDS(ON), ON-RESISTANCE (OHM)


                                                                                                                                                                                                            4
     RDS(ON), NORMALIZED




                                         1.4

                                         1.2                                                                                                                                                                3
                                                                                                                                                                                                                                                  TA = 125oC

                                          1
                                                                                                                                                                                                            2

                                         0.8

                                                                                                                                                                                                            1
                                         0.6
                                                                                                                                                                                                                      TA = 25oC

                                         0.4
                                                                                                                                                                                                            0
                                               -50     -25         0           25          50         75         100         125     150
                                                                                                                                                                                                                2                       4                      6                     8                     10
                                                                  TJ, JUNCTION TEMPERATURE (oC)                                                                                                                                         -VGS, GATE TO SOURCE VOLTAGE (V)



                                          Figure 3. On-Resistance Variation with                                                                                                                            Figure 4. On-Resistance Variation with
                                                      Temperature.                                                                                                                                                 Gate-to-Source Voltage.

                                         1.2                                                                                                                                                          10
                                                     VDS = -10V                                                              25oC                                                                                     VGS = 0V
                                                                                               TA = -55oC
                                                                                                                                           -IS, REVERSE DRAIN CURRENT (A)




                                           1
                                                                                                                                                                                                            1
                -ID, DRAIN CURRENT (A)




                                                                                                                     125oC
                                                                                                                                                                                                                                    TA = 125oC
                                         0.8
                                                                                                                                                                                               0.1

                                         0.6
                                                                                                                                                                                                                                                           25oC
                                                                                                                                                                                  0.01
                                         0.4
                                                                                                                                                                                                                                                                          -55oC
                                                                                                                                                                             0.001
                                         0.2


                                           0                                                                                                                                0.0001
                                                1        1.5           2            2.5           3            3.5           4       4.5                                                                        0.2               0.4                0.6            0.8                  1                 1.2
                                                                 -VGS, GATE TO SOURCE VOLTAGE (V)                                                                                                                                -VSD, BODY DIODE FORWARD VOLTAGE (V)




                                                   Figure 5. Transfer Characteristics.                                                       Figure 6. Body Diode Forward Voltage Variation
                                                                                                                                                 with Source Current and Temperature.




                                                                                                                                                                                                                                                                                         NDS0610 Rev B1(W)
                                                                                                                                                                                                                                                                                                                           NDS0605
Typical Characteristics


                                        10                                                                                                                                                    100
                                                                                                                                                                                                                                                                                                   f = 1 MHz
                                                                          ID = -0.5A                              VDS = -12V
       -VGS, GATE-SOURCE VOLTAGE (V)




                                                                                                                                                -24V                                                                                                            CISS                               VGS = 0 V
                                                 8                                                                                                                                                            80




                                                                                                                                                                     CAPACITANCE (pF)
                                                                                                                                  -48V
                                                 6                                                                                                                                                            60


                                                 4                                                                                                                                                            40

                                                                                                                                                                                                                                              COSS
                                                 2                                                                                                                                                            20

                                                                                                                                                                                                                                  CRSS
                                                 0                                                                                                                                                                        0
                                                                 0                     0.4               0.8            1.2              1.6            2                                                                     0          10           20               30           40                 50        60
                                                                                                      Qg, GATE CHARGE (nC)                                                                                                                    -VDS, DRAIN TO SOURCE VOLTAGE (V)



                                                                      Figure 7. Gate Charge Characteristics.                                                                                                                  Figure 8. Capacitance Characteristics.

                                           10                                                                                                                                                                             5
                                                                                                                                                                                        P(pk), PEAK TRANSIENT POWER (W)                                                                   SINGLE PULSE
                                                                                                                                                                                                                                                                                          RθJA = 350°C/W
                                                                           RDS(ON) LIMIT                                                                                                                                  4                                                                  TA = 25°C
                                                                                                                                                100us
-ID, DRAIN CURRENT (A)




                                                    1
                                                                                                                                          1ms
                                                                                                                               10ms                                                                                       3
                                       0.1                                                                                100ms
                                                                                                                        1s
                                                                                                                 10s                                                                                                      2
                                                                             VGS = -10V                        DC
                               0.01                                        SINGLE PULSE
                                                                           RθJA = 350oC/W                                                                                                                                 1
                                                                              TA = 25oC

                  0.001                                                                                                                                                                                                   0
                                                                      1                                           10                                    100                                                                0.01                 0.1                    1                      10                 100
                                                                                             -VDS, DRAIN-SOURCE VOLTAGE (V)                                                                                                                                 t1, TIME (sec)




                                                     Figure 9. Maximum Safe Operating Area.                                                                                                                                       Figure 10. Single Pulse Maximum
                                                                                                                                                                                                                                         Power Dissipation.


                                                                             1
                               r(t), NORMALIZED EFFECTIVE TRANSIENT




                                                                                             D = 0.5
                                                                                                                                                                                                                                                                             RθJA(t) = r(t) * RθJA
                                                                                              0.2
                                        THERMAL RESISTANCE




                                                                                                                                                                                                                                                                                                   o
                                                                                                                                                                                                                                                                              RθJA = 350 C/W
                                                                           0.1                 0.1
                                                                                               0.05
                                                                                                                                                                                                                                                                            P(pk)
                                                                                                0.02
                                                                                                  0.01
                                                                                                                                                                                                                                                                                         t1
                                                                          0.01                                                                                                                                                                                                        t2
                                                                                                                                                                                                                                                                             TJ - TA = P * RθJA(t)
                                                                                                       SINGLE PULSE
                                                                                                                                                                                                                                                                            Duty Cycle, D = t1 / t2

                                                                      0.001
                                                                          0.0001                          0.001                   0.01                      0.1                                                                   1                        10                       100                         1000
                                                                                                                                                                  t1, TIME (sec)


                                                                                                                       Figure 11. Transient Thermal Response Curve.
                                                                                                                         Thermal characterization performed using the conditions described in Note 1a.
                                                                                                                         Transient thermal response will change depending on the circuit board design.




                                                                                                                                                                                                                                                                                                       NDS0610 Rev B1(W)
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PRODUCT STATUS DEFINITIONS

Definition of Terms

  Datasheet Identification           Product Status                                  Definition

 Advance Information                 Formative or            This datasheet contains the design specifications for
                                     In Design               product development. Specifications may change in
                                                             any manner without notice.

 Preliminary                         First Production        This datasheet contains preliminary data, and
                                                             supplementary data will be published at a later date.
                                                             Fairchild Semiconductor reserves the right to make
                                                             changes at any time without notice in order to improve
                                                             design.

 No Identification Needed            Full Production         This datasheet contains final specifications. Fairchild
                                                             Semiconductor reserves the right to make changes at
                                                             any time without notice in order to improve design.


 Obsolete                            Not In Production       This datasheet contains specifications on a product
                                                             that has been discontinued by Fairchild semiconductor.
                                                             The datasheet is printed for reference information only.


                                                                                                                   Rev. I1