4.5b
Transfer Stamping for Heterogeneneous Integration
Professor: John A. Rogers Jong-Hyun Ahn, Tae-Ho Kim, Matthew A. Meitl Goals
SW NTs G aN GaAs Si
Research Results & Broader Impact
Single Crystalline Si-TFT SiDoped area
40 μm 5 μm ` 40 μm 10 μm n a n o tu b e s , w ire s a n d rib b o n s s o u rc e w a fe r
Fabrication of 3D bendable electronic devices using nanonanoCEMMS transfer printing system
1. The combined use of semiconductor nanomaterials and printing techniques enables high quality electronics to be formed on diverse substrates, including nonplanar surfaces and thin plastic sheets 2. Applications to flexible displays, large area solar cells, conformable X-ray imagers distributed structural and personal health monitors, curved surface imagers as electronic eyes, etc.
Undoped area Box
G
PDMS transfer
S
D
μs-Si (290nm) SiO2 (100nm) Cured Polyimide
s ta m p p rin t
5mm
Thin Polyimide (25μm)
Polyimide precursor Thin Kapton
p ro c e s s d e v ic e s ; re p e a t p rin tin g d e v ic e s u b s tra te
PECVD SiO2 Growth & S-D Open S G D
3 D -H G I
Science 314, 1754 (2006)
Mapping to Center’s Objectives
Development of transfer printing system and preparation of donor materials Development of a high-yield printing technology by intergration with nano-CEMMS printer Fabrication of highperformance 3-D multilayer electronics
5-stage ring oscillator
0.10
Vout(V)
0.05 0.00 -0.4 0.0 0.4 0.8 1.2
Time (μs)
-0.05
0.3 cm
Amplitude
0.06 0.03 0.00
7.3
8.1 8.5
Fundamental Questions/Challenges
“Can dry transfer printing enable integration of various semiconductor nanomaterials into flexible electronic devices?” devices?”
Dry Transfer printing using rubber stamps Fully automated dry transfer printing tool
600 μm
5
10
15
20
Frequency (MHz)
3D Heterogeneous Integrated Electronics
100 3rd
Si
50 0 -6 -3 0 3 6
10 10 10
2 0 -2
600 300 0 0
3V 2V 1 2 0V 3
i) Laminate PDMS stamp
PDMS
“mother” substrate
ii) Release microstructures
An automated way to transfer the silicon with high throughput, and excellent control over registration and positioning (to within ~1 mm)
-0.2
IDS(μA)
-1 2nd 10 -1.2 -7V SWNT -3
-0.1 0.0 -10 -5 0 5
10 10
-5
-0.6 -5V 0.0 0V -6 -4
-2
0 0V -1V -3V 6
1000 1st
GaN
500
2 10 1000
10 10 -7 -5 -3 -1 1
0 -2
500 0 0
0
μs-Sc
Area multiplication using selective transfer printing process
3rd Si 2nd SWNT
S
G
D Epoxy SiO2
2
4
VGS(V)
VDS(V)
1st GaN
anchors
Cured PI PU PI
iii) Transfer microstructures
Important features: • low temperatures processing • applicability to broad classes of nanomaterials. • nondestructive contacts • easy formation of electrical interconnects
Interaction with Other Projects
adhesive
iv) Peel back PDMS stamp
receiving substrate
Transfer printing of diamond microstructures onto plastic substrates
Research Plan
Transfer printing of nanoscale materials and sheetlike objects onto various substrate
: In Rogers group
100 µm
Future Efforts
Fabrication of integrated electronic devices by glueless transfer printing using piezoelectric actuation Transfer printing of diamond as protective layer for flexible IC
Development of transfer printing for large area
100 μm 100 μm
3-D multilayer electronics transfer-printed with various semiconductor nanomaterials
100 μm 100 μm
Fabrication of intergrated electronic devices with nanoCEMMS printer
GaAs
100 μm
100 μm
Testbeds and Applications
an NSF-sponsored center for nanoscale science and engineering