BSM 200 GB 120 DL

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					                                                                  BSM 200 GB 120 DL


IGBT Power Module

Preliminary data

• Low Loss IGBT
• Low inductance halfbridge
• Including fast free- wheeling diodes
• Package with insulated metal base plate


Type                           VCE       IC       Package           Ordering Code
BSM 200 GB 120 DL              1200V 340A         HALF-BRIDGE 2     C67076-A2300-A70

Maximum Ratings
Parameter                                             Symbol       Values           Unit
Collector-emitter voltage                             VCE            1200           V
Collector-gate voltage                                VCGR
RGE = 20 kΩ                                                          1200
Gate-emitter voltage                                  VGE            ± 20
DC collector current                                  IC                            A
TC = 25 °C                                                           340
TC = 80 °C                                                           200
Pulsed collector current, tp = 1 ms                   ICpuls
TC = 25 °C                                                           680
TC = 80 °C                                                           400
Power dissipation per IGBT                            Ptot                          W
TC = 25 °C                                                           1400
Chip temperature                                      Tj            + 150           °C
Storage temperature                                   Tstg        -40 ... + 125

Thermal resistance, chip case                         RthJC         ≤ 0.09          K/W
Diode thermal resistance, chip case                   RthJCD        ≤ 0.18
Insulation test voltage, t = 1min.                    Vis            2500           Vac
Creepage distance                                     -               20            mm
Clearance                                             -               11
DIN humidity category, DIN 40 040                     -               F             sec
IEC climatic category, DIN IEC 68-1                   -           40 / 125 / 56




Semiconductor Group                           1                                   Feb-14-1997
                                                                        BSM 200 GB 120 DL




Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter                                  Symbol               Values               Unit
                                                      min.      typ.        max.

Static Characteristics
Gate threshold voltage                     VGE(th)                                   V
VGE = VCE, IC = 8 mA                                  4.5        5.5        6.5
Collector-emitter saturation voltage       VCE(sat)
VGE = 15 V, IC = 200 A, Tj = 25 °C                    -          2.2        2.6
VGE = 15 V, IC = 200 A, Tj = 125 °C                   -          2.5        3
 Zero gate voltage collector current       ICES                                      mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C                   -         -           10
VCE = 1200 V, VGE = 0 V, Tj = 125 °C                  -         -           -
Gate-emitter leakage current               IGES                                      nA
VGE = 20 V, VCE = 0 V                                 -         -           400

AC Characteristics
Transconductance                           gfs                                       S
VCE = 20 V, IC = 200 A                                110       -           -
Input capacitance                          Ciss                                      nF
VCE = 25 V, VGE = 0 V, f = 1 MHz                      -          13         -
Output capacitance                         Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz                      -          2          -
Reverse transfer capacitance               Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz                      -          1          -




Semiconductor Group                       2                                        Feb-14-1997
                                                                        BSM 200 GB 120 DL




Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter                                  Symbol               Values               Unit
                                                      min.      typ.        max.

Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time                         td(on)                                    ns
VCC = 600 V, VGE = 15 V, IC = 200 A
RGon = 4.7 Ω                                          -          160        -
Rise time                                  tr
VCC = 600 V, VGE = 15 V, IC = 200 A
RGon = 4.7 Ω                                          -          80         -
Turn-off delay time                        td(off)
VCC = 600 V, VGE = -15 V, IC = 200 A
RGoff = 4.7 Ω                                         -          550        -
Fall time                                  tf
VCC = 600 V, VGE = -15 V, IC = 200 A
RGoff = 4.7 Ω                                         -          90         -


Free-Wheel Diode
Diode forward voltage                      VF                                        V
IF = 200 A, VGE = 0 V, Tj = 25 °C                     -          2.3        2.8
IF = 200 A, VGE = 0 V, Tj = 125 °C                    -          1.8        -
Reverse recovery time                      trr                                       µs
IF = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs, Tj = 125 °C                      -          0.5        -
Reverse recovery charge                    Qrr                                       µC
IF = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs
Tj = 25 °C                                            -          10         -
Tj = 125 °C                                           -          25         -




Semiconductor Group                        3                                       Feb-14-1997
                                                                                              BSM 200 GB 120 DL




Power dissipation                                         Safe operating area
Ptot = ƒ(TC)                                              IC = ƒ(VCE)
parameter: Tj ≤ 150 °C                                    parameter: D = 0, TC = 25°C , Tj ≤ 150 °C

                                                                  10 3
       1500                                                                                                                 tp = 42.0µs

         W
       1300                                                         A                                                           100 µs
Ptot   1200                                                IC
       1100
                                                                  10 2
       1000
       900
       800                                                                                                                      1 ms
       700
       600
       500                                                        10 1

       400
                                                                                                                                10 ms
       300
       200
       100
         0                                                        10 0                                                     DC 3
                                                                        0                 1                  2
           0   20   40   60   80   100   120   °C   160              10              10                 10                   10           V
                                               TC                                                                                   VCE


Collector current                                         Transient thermal impedance                                      IGBT
IC = ƒ(TC)                                                Zth JC = ƒ(tp)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C                       parameter: D = tp / T

                                                                  10 0
       340

         A                                                        K/W


       280                                                        10 -1
 IC                                                       ZthJC

       240

                                                                  10 -2
       200


       160                                                                                                                     D = 0.50
                                                                  10   -3
                                                                                                                                     0.20
       120                                                                                                                           0.10
                                                                                                                                     0.05
        80                                                                                                                           0.02
                                                                  10 -4
                                                                              single pulse
                                                                                                                                     0.01
        40

          0                                                       10 -5
                                                                         -5          -4            -3                 -2            -1           0
           0   20   40   60   80   100   120   °C   160               10        10            10                 10            10         s 10
                                               TC                                                                                   tp



Semiconductor Group                                   4                                                                        Feb-14-1997
                                                                                       BSM 200 GB 120 DL




Typ. output characteristics                                       Typ. output characteristics
IC = f (VCE)                                                      IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C                                 parameter: tp = 80 µs, Tj = 125 °C

     400                                                               400


       A                                                                 A
               17V                                                               17V
               15V                                                               15V
IC             13V                                                IC             13V
     300       11V                                                     300       11V
               9V                                                                9V
               7V                                                                7V
     250                                                               250


     200                                                               200


     150                                                               150


     100                                                               100


      50                                                                50

       0                                                                 0
        0          1       2           3        V         5               0        1    2       3      V         5
                                                    VCE                                                    VCE


Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V

     400


       A

IC
     300


     250


     200


     150


     100


      50

       0
        0      2       4       6   8       10       V    14
                                                     VGE



Semiconductor Group                                           5                                        Feb-14-1997
                                                                                                                    BSM 200 GB 120 DL




 Typ. gate charge                                                           Typ. capacitances
 VGE = ƒ(QGate)                                                             C = f (VCE)
 parameter: IC puls = 200 A                                                  parameter: VGE = 0 V, f = 1 MHz

            20                                                                        10 2


             V
                                                                                       nF
   VGE      16                                                                C

            14                           600 V               800 V                                                                           Ciss
                                                                                      10 1

            12

            10

                                                                                                                                             Coss
             8
                                                                                      10 0
             6                                                                                                                               Crss


             4

             2

             0                                                                        10 -1
              0       200    400     600     800    1000             1400                  0         5     10       15   20    25    30     V   40
                                                             QGate                                                                          VCE


 Reverse biased safe operating area                                         Short circuit safe operating area
 ICpuls = f(VCE) , Tj = 150°C                                               ICsc = f(VCE) , Tj = 150°C
  parameter: VGE = 15 V                                                      parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH

            2.5                                                                         12




ICpuls/IC                                                                   ICsc/IC

                                                                                                 di/dt = 1000A/µs
                                                                                         8               3000A/µs
                                                                                                         5000A/µs
            1.5

                                                                                         6

            1.0

                                                                                         4
                                                                                          ° allowed number of
                                                                                            short circuit: <1000
            0.5                                                                           ° time between short
                                                                                         2 circuit: >1s



            0.0                                                                          0
                  0   200   400    600     800   1000 1200    V   1600                       0      200   400   600      800   1000 1200    V   1600
                                                              VCE                                                                           VCE




 Semiconductor Group                                                   6                                                                  Feb-14-1997
                                                                                         BSM 200 GB 120 DL




Typ. switching time                                            Typ. switching time
I = f (IC) , inductive load , Tj = 125°C                       t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 4.7 Ω                    par.: VCE = 600 V, VGE = ± 15 V, IC = 200 A

     10 4                                                           10 4



      ns                                                             ns
 t                                                              t                                         tdoff


     10 3                                                           10 3


                                               tdoff                                                      tdon
                                                                                                          tr
                                               tdon

                                               tr                                                         tf
     10 2                                                           10 2
                                               tf




     10 1                                                           10 1
         0      100        200   300       A             500            0     10    20     30     40       Ω        60
                                                    IC                                                         RG


Typ. switching losses                                          Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C                       E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 4.7 Ω                    par.: VCE = 600V, VGE = ± 15 V, IC = 200 A

      130                                                           130
                                                                                                          Eon
     mWs                                                            mWs

      110                                                           110
 E    100                                                      E    100

       90                                                            90

       80                                                            80

       70                                                            70

       60                                                            60
                                                                                                          Eoff
       50                                                            50

       40                                                            40

       30                                                            30

       20     Eoff                                                   20

       10            Eon                                             10
        0                                                             0
         0      100        200   300       A             500           0      10    20     30     40       Ω        60
                                                    IC                                                         RG



Semiconductor Group                                       7                                               Feb-14-1997
                                                                                                BSM 200 GB 120 DL




Forward characteristics of fast recovery                     Transient thermal impedance                            Diode
reverse diode IF = f(VF)                                     Zth JC = ƒ(tp)
 parameter: Tj                                               parameter: D = tp / T

                                                                     10 0
     400

                                                                     K/W
      A

IF                                                           ZthJC
                                                                     10 -1
     300


     250

                            Tj=125°C         Tj=25°C
     200                                                             10 -2
                                                                                                                      D = 0.50
                                                                                                                             0.20
     150
                                                                                                                             0.10
                                                                                                                             0.05
     100                                                             10 -3
                                                                                                                             0.02
                                                                                 single pulse                                0.01
      50

       0                                                             10 -4
                                                                            -5          -4           -3        -2           -1          0
       0.0   0.5      1.0     1.5      2.0    V        3.0               10        10           10        10           10        s 10
                                                  VF                                                                        tp




Semiconductor Group                                     8                                                              Feb-14-1997
                                             BSM 200 GB 120 DL




                          Circuit Diagram




                      Package Outlines
                      Dimensions in mm
                      Weight: 420 g




Semiconductor Group                      9            Feb-14-1997