Sensors & Transducers Journal, Vol. 117, Issue 6, June 2010, pp. 106-111
Sensors & Transducers
ISSN 1726-5479
© 2010 by IFSA
http://www.sensorsportal.com
Influence of Temperature on Current-Voltage Characteristics
and Noise of Hydrogen Sensors
1
Z. H. MKHITARYAN, 2V. M. AROUTIOUNIAN, 3A. A. DURGARYAN
Department of Physics of Semiconductors and Microelectronics, Yerevan State University,
1, Alex Manoukian, 0025, Yerevan, Armenia
E-mail: 1zaramkhitaryan@ysu.am, 2kisahar@ysu.am, 3armendurgaryan@gmail.com
Received: 18 April 2010 /Accepted: 21 June 2010 /Published: 25 June 2010
Abstract: In this work, experimental results for temperature dependences of current-voltage and noise
characteristics (CVC) in structures with porous silicon layer in dry air and under hydrogen adsorption
conditions are presented.
Approximation of the received results is carried out. Sample measurement temperature ranges from
20 0С to 90 0С. It is shown that when temperature increases, even within small limits, influence of
hydrogen adsorption grows significantly which results in more tangible CVC and noise spectra
changes. The received results are discussed. Copyright © 2010 IFSA.
Keywords: Low frequency noise, Hydrogen sensor, Porous silicon.
1. Introduction
Porous silicon (PS) is a promising nano-material which combines available technology and variety of
physical properties.
Studying the porous silicon properties may open horizons for structures of a new generation [1-2]. An
important property of porous silicon (PS) is the presence of highly developed and rather ramified
surface which is easily accessible to ambient molecules. This brings to highly adsorptive activity of PS
and influences its electrical and noise characteristics [3-6].
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Sensors & Transducers Journal, Vol. 117, Issue 6, June 2010, pp. 106-111
One of the big advantages of sensors made of PS is their ability to sense at temperatures as low as
room temperatures. Therefore we have investigated PS behavior over a temperature range of 20 0С
t