Advances in Blue Laser Diodes by pgu13428

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									•     "Advances in Blue Laser Diodes"
•   3 S. Ito, N. Nakayama, H. Okuyama, T. Ohata, M. Ozawa, K. Nakano, A. Ishibashi,
•     M. Ikeda, K. Akimoto, and Y. Mori,    Int. Conf. Sol. State. Dev. Mat. , 1993
•     "Room temperature pulsed operation of 498-nm lasers"
•   4 Akira Ishibashi and Yoshifumi Mori, Conf. on Lasers and Electro-Optics, CWF1,
•   Anaheim, USA, 1994,
•   "ZnMgSSe-based Blue Laser Diodes"
•   5 Akira Ishibashi, 13th Symposium on Alloy Semiconductor Physics and Electronics
•     (ASPEcs-13), S-2, Izu-Nagaoka, Japan, 1994
•     "ZnMgSSe-based laser diodes"
•   6 Akira   Ishibashi, 14th IEEE Int. Semicon. Laser Conf. (ISLC), M1.2, Hawaii, 1994
•     "Blue-Green Laser Diodes"
•   7 Kazushi Nakano and Akira Ishibashi, The German Physical Society Meeting,
•     Di-16.15, HL 16.4,   Munster, 1994, "Blue-emitting Laser Diodes"
•   8 M. Ozawa and A. Ishibashi, Optical Data Storage Conf., MD-4, Dana Point, USA,
•   1994,
•     "Room Temperature CW Emission of II-VI Diode Lasers"
•   9 H. Okuyama and A. Ishibashi, Conf. on Lasers and Electro-Optics Europe (CLEO
•     Europe), Amsterdam, 1994,
•    "ZnMgSSe-based Blue Laser Diodes"
•   10 S. Itoh, H. Okuyama, N. Nakayama, S. Matsumoto, M. Nagai, S. Tomiya,
    K.Nakano,
•    M. Ozawa, T. Ohata, M.Ikeda,    A. Ishibashi, and Y. Mori,   8th Int Conf. On
•    Molecular Beam Epitaxy, Osaka, Japan, 1994
•    "ZnMgSSe-based Laser Diodes"
•   11 M. Ozawa and A. Ishibashi, Int. Workshop on Metastable and Strained
•      Semiconductor Structures, VI-2, 1994
•     "Growth of ZnMgSSe and Its Application to Laser Diodes"
•
•   12 T. Ohata, S. Itoh, N. Nakayama, S. Matsumoto, K. Nakano, M. Ozawa, H.
    Okuyama,
•      S. Tomiya, M. Ikeda, and A. Ishibashi, Int. Workshop on ZnSe-based Blue-Green
•      Laser Structures, Wurzburg, Germany, 1994
•      "Device Structures and Characteristics of Laser Diodes with ZnMgSSe Cladding
•      Layers"
•
•   13 Akira Ishibashi, 7th Int. Conf. on II-VI Compounds and Devices, Edinburgh,
•      UK, 1995,
•      "II-VI Blue-Green Light Emitters"
•   14 Akira Ishibashi, Topicsal Workshop on III-V Nitrides, Nagoya, 1995
•      "Recent Progress in II-VI Laser Diodes"
•   15 S. Tomiya, M. Ukita, H. Okuyama, K. Nakano, S. Itoh, A. Ishibashi, E. Morita,
•     and M. Ikeda,    Deffects in Semicoductors Conference, Sendai, Japan, 1995
•     "Structural Studay of Degraded II-VI Blue Light Emitters"
•   16 M. Ukita, S. Tomiya, K. Nakano, and A. Ishibashi,
•      14th Electronic Materials Symposium, Izu-Nagaoka, Japan, 1995
•      "ZnMgSSe-based Laser Diodes - Room Temperature Operation and Lifetime"
•   17 M. Ozawa, S. Itoh, A. Ishibahis, and M. Ikeda,
•      Int. Symposium Conpound Semiconductors, Cheju Island, Korea, 1995
•      "ZnMgSSe-based Semiconductor Lasers"
•   18 H. Okuyama, S. Itoh, M.Ikeda, and A. Ishibashi, IEEE LEOS Annual Mtg.,
•      San Francisco, 1995,
•     " Progress in Blue/Green Laser Diodes"
•   19 N. Nakayama, S. Itoh, A. Ishibashi, and Y. Mori, SPIE, San Jose, 1996
•      "High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green and Blue Light-Emitting
•    Diodes"
•   20 Akira Ishibashi, Int. Symposium on Blue Lasers and Light Emitting Diodes,
•      Chiba, 1996,
•      "Present Status of Blue/Green Emitting II-VI LDs"
•   21 Akira Ishibashi,   Spring Mtg. of Japan Electro-communication Society, Tokyo,
•     March, 1996,
•     "Current Status and Perspective of ZnSe-based Blue-Green LDs"
•   22 Akira Ishibashi, HBF Int. Forum on Blue Light Emission for Future Imaging
•      Technology, Tokyo, Japan, May, 1996
•      "Recent Progress in the Development of Blue Laser Diodes"
•   23 S. Ito and Akira Ishibashi, European Material Research Society Symposium on
•      UV, Blue, and Green Light Emission from Semiconductor Materials, Strasbourg,
•      France, 1996,
•      "Room Temperature Laser Operation of Wide-gap II-VIs"
•   24 K. Nakano, and Akira Ishibashi, Solid State Device Mtg., Yokohama, Japan, 1996
•      "Characterization of ZnMgSSe-based Wide-gap Laser Diodes"
•   25 A. Ishibashi, S. Tomiya, and M. Ukita, Int. Conf. Phys. Semicon. (ICPS),
•      Berlin, 1996, (The Physics of Semiconductors, ed. M. Scheffler and
•    R. Zimmermann, World Scientific, Singapore, 1996, p. 3155)
•      "Progress in Wide Band Gap II-VI Lasers"
•   26 A. Ishibashi, Int. Topical Workshop on Space Laser Communications, Tokyo,1997
•      "State of the Art of II-VI Blue-green Laser Diodes"
•   27 H. Noguchi, S. Tomiya, S. L. Chuang, and A. Ishibashi, Physics and Simulation of
•     Optoelectronic Devices V, ed. M. Osinski and W.W. Chow, SPIE, Bellingham,
•   1997, pp. 22-31,
•   "ZnMgSSe-based Laser Diodes"
•   28 N. Eguchi and A. Ishibashi, Optical Data Storage, Tucson, 1997
•      "An Optical Pickup Using a Blue-Green Laser Diode to Read a High-Density Disk"
•   29 H. Okuyama and A. Ishibashi, IEEE/LEOS Summer Topical Meetings, WA1,
•      Montreal, 1997,
•     "Current Status of ZnMgSSe-based LDs"
•   30 N. Nakayama and A. Ishibashi, Int. Conf. II-VI Compounds, Mo-01, Grenoble,
•    1997,
•     "Recent Developments in ZnSe-based Blue-green Lasers"
•   31 K. Nakano and A. Ishibashi, Int. Conf. Defects in Semiconductors, II-VI 2-1,
•      Aveiro, Portugal, 1997,
•   "Degradation in II-VI Laser Diodes"
•   32 S. Ito and A. Ishibashi, Photonik Symposium, MW4, Wuerzburg, 1997
•      "ZnMgSSe-based Blue-green Laser Diodes"
•   33 A. Ishibashi, 11th Japan-Germany Forum on Information Technology, Wed3-2,
•      Nagano, 1997,
•      "II-VI Wide Gap Semiconductor Laser Diodes"
•   34 A. Ishibashi, Sym. on Novel Semiconductor Materials, SEMI Japan, Chiba, 1977
•     “ZnMgSSe-based Blue-Green Laser Diodes”
•   35 S. L. Chuang, N. Nakayama, A. Ishibashi, S. Taniguchi, and K. Nakano, Photonic
•     West, Physics and Simulation of Optoelectronic Devices VI, San Jose, USA, 1998.
•     "Degradation of II-VI blue-green semiconductor lasers"
•   36 A. Ishibashi, Physics and Simulation of Optoelectronic Devices VII, San Jose, 1999
•      "Current Status and Perspective of ZnMgSSe-based II-VI Laser Diodes"
•   37 S. Ito, K. Nakano, and A. Ishibashi, Int. Conf. II-VI Compounds, Mo-1, Kyoto,
•    1999,
•   "Current Status and Future Porspects of ZnSe-based light-emitting devices"
•   38 O. Shulz, M. Strassburg, T. Rissom, S. Rodt, L. Reissmann, U.W. Pohl, D. Bimberg,
•   M. Klude, D. Hommel, S. Itoh, K. Nakano, and A. Ishibashi, The Tenth Int. Conf. on
•   II-VI Compounds, Th-14, Bremen Germany, 2001
•   “Operation and catastrophic optical degradation of II-VI laser diodes at output
•    powers larger than 1W”
•   学会発表(一般講演)
•        Semiconductor Superlattices and Nanostructures Physics
•   1 A. Ishibashi, Y. Mori, M. Itabashi, N. Watanabe, 18th Int. Conf. Phys. Semicon.
•     pp.1365-1368, vol. 2, 1987
•     "A fundamentally new aspect of electron -phonon interaction in (AlAs)n(GaAs)n
•      ultra-thin layer superlattices"
•   2 A. Ishibashi, Y. Mori, M. Itabashi, N. Watanabe, Proc. Int. Workshop for Future
•     Electron Devices - Superlattice Devices -, Tokyo, Japan, 1987
•      "Atomic layer superlattices"
•   3 K. Funato, A. Ishibashi, and Y. Mori, Symposium on Alloy Semiconductor Physics
•    and Electronics, Hawaii, 1989
•   "Magneto-conductance of an ultra-small δ-doped GaAs channel grown by
•   metalorganic chemical vapor deposition"
•        Wide-gap II-VI semiconductors
•   S. Itoh, H. Okuyama N. Nakayama, S. Matsumoto, M. Nagai, S. Tomiya,
•   K. Nakano, M. Ozawa, T. Ohata, M.Ikeda, A. Ishibashi, and Y. Mori,
•        8th Int Conf. MBE, Osaka, Japan,
•   5 N. Nakayama, S. Itoh, H. Okuyama, E. Kato, S. MAtsumoto, M. Nagai, M. Ozawa,
•     T. Ohata, K. Nakano, M. Ikeda, A. Ishibashi, and Y. Mori,
•     5th Optoelectron. Conf. (OEC'94) Technical Digest , 15A2-6, July 12-15
•     Makuhari, Japan, 1994
•     "Blue-Green Laser Diodes woth ZnMgSSe Cladding Layers"
•   6 Kazushi Nakano and Akira Ishibashi, Gordon Research Conf. Point Defects, Line
•   Defects, and Interfaces in Semiconductors, July. 31-Aug. 5, Tu-3,
•   Plymouth, NH, 1994,
•   "Characterization of ZnMgSSe Blue Laser Diodes"
•   7 S. Itoh and A. Ishibashi, SPIE Int. Symp. II-VI Blue/Green Laser Diodes, 1.1,
•     Boston, USA, 1994
•     "Blue/Green Laser Diodes Based on ZnMgSSe"
•   8 A. Ishibashi and S. Itoh, 7th IEEE Lasers and Elecro-Optics Society Annual Meeting,
•     PD1.1, Boston, USA, 1994
•   "One-hour-long Room Temperature CW Operation of ZnMgSSe-based Blue-Green
•    laser diodes"
•   9 K. Nakano, S. Tomiya, M. Ukita, H. Yoshida, A. Itoh, E. Morita, Mi. Ikeda,
•     and A. Ishibashi, Electronic Materials Conference, Verginia, USA, 1995
•     " Structural Study of Degraded AnMgSSe Blue Light Emitters"
•   10 S. Itoh, A. Ishibashi, and M. Ikeda, Gordon Research Conf., Andover, USA, 1995
•      "ZnMgSSe-based Semiconductor Lasers"
•   11 N. Nakayama, H. Okuyama, T. Kawasumi, and A. Ishibashi, 7th Int. Conf. on II-VI
•      Compounds and Devices, Edinburgh, UK, 1995,
•     "Channeled Substrate Planar Wave-guided Green Laser Diodes"
•   12 H. Okuyama, N. Nakayama, S. Itoh, M. Ikeda, and A. Ishibashi, SSDM, Osaka,
•   Japan, 1995
•     "RT Operation of ZnSe-Active-Layrer and ZnCdSe-Active-Layer Laser Diodes"
•   13 A. Toda, D. Imanishi, Yanasima, and A. Ishibashi, Physics and Simulation of
•    Optoelectronic Devices IV, San Jose, 1996
•      "Room Temperature Photopumped Lasing Actin of ZnCdSe/ZnSe/ZnMgSSe
•        Doubleheterostructure Grown by Metalorganic Chemical Vapor Depostion"
•   14 P. Rees, J. F. Heffernan, F.P. Logue, J.F. Donegan, C. Jordan,
•      F. Hiei, and A. Ishibashi, Physics and Simulation of Optoelectronic Devices IV,
•   San Jose, 1996,
•      "Optical Gain in ZnCdSe-ZnSe Quantum Well Structures"
•   15 S.L. Chuang, M. Ukita, S. Kijima, S. Taniguchi, and A. Ishibashi, Conference on
•      Lasers and Electro-Optics 1996, Anaheim, June, 1996
•      "Optical Output Degradation f II-VI Blue-Green Light Emitting Diodes"
•   16 A. Toda, F. Nakamura, K. Yanashima, and A. Ishibashi, 8th Int. Conf. on Metal
•      Organic Vapor Phase Epitaxy (IC-MOVPE 8), Cardiff, UK, June, 1996
•     "Blue-Green Laser Diodes grown by Photo-assisted MOCVD"
•   17 J. Hegarty, P. Rees, J.F. Heffernan, J.F. Donegan, F.P. Logue, C. Jordan, D. Fewer,
•      S. Hewlett, E. Mclabe, F. Hiei, S. Taniguchi, T. Hino, and A. Ishibashi, Electron.
•      Materials Conference 1996
•      "The Effect of Coulomb enhancement on the Optical gain in (ZnCd)Se/ZnSe
•      Quantum Wells"
•   18 S. Taniguchi, T. HIno, S. Itoh, K. Nakano, N.Nakayama, A. Ishibashi,
•     and M. Ikeda, Workshop on Futrue Direction of II-VI Semiconductor Materials and
•     Devices, Buffalo, USA, 1996
•     "Characteristics of II-VI Laser Diodes"
•
•   19 H. Okuyama,T. Kawasumi, A. Ishibashi, and M. Ikeda, 9th Int. Conf. on MBE,
•      USA, 1996
•      "Growth Mechanism of II-VI Compound Semiconductors by Molecular Beam
•        Epitaxy"
•   20 J.F. Donegan, F.P. Logue, C. Jordan, P. Rees, S. J. Hewlett, J.F. Heffernan,
•     D. Fewer, E. M. McCabe, J. Hegarty, F. Hiei, S. Taniguchi, T. Hino,
•     K. Nakano, and A. Ishibashi,     The Physics of Semiconductors, ed. M. Scheffler
•     and R. Zimmermann, World Scientific, Singapore, 1996,
•     "Gain and Carrier Dynamics at Lasing Densities in ZnCdSe Quantum Well
•    Materiasls"
•   21 S. Tomiya, R. Minatoya, H. Tsukamoto, S. Ito, K. Nakano, E. Morita,
•     A. Ishibashi, and M. Ikeda, The Physics of Semiconductors, ed. M. Scheffler
•     and R. Zimmermann, World Scientific, Singapore, 1996,
•   "Surface Roughening in Molecular Beam Epitaxyof ZnSe Related II-VI Epitaxial
•    Films"
•   22 N. Nakayama, A. Taniguchi, T. Hino, K. Nakano, and A. Ishibashi, Int. Semicon.
•      Laser Conf. (ISLC), Israel, 1996,
•      "High Power Continuous Wave Operation of 512 nm ZnCdSe/ZnSSe/ZnMgSSe
•        SQW-SCH LAser Diodes"
•   23 F. P. Logue, P. Rees, J. F. Heffernan, C. Jordan, J. F. Donegan, J. Hegarty,
•      F. Hiei, and   A. Ishibashi,   SIOE 1996/ICSMM-9
•      "Coulomb Enhancement to the Optical gain in (ZnCd)Se/ZnSe Multiple Quantum
•        Wells"
•   24 A. Ishibashi, Int. Optoelectronics Symposium, 130th Committee on Optoelectronics,
•     Japan Society for Promotion of Science (JSPS), Tokyo, 1997
•     "II-VI Blue Semiconductor Lasers"
•   25 C. Jordan, D. T. Fewer, J. F. Donegan, F. P. Logue, E. M. McCabe, A. Huynh,
•      S. Taniguchi, T. Hino, K. Nakano, and A. Ishibashi, Mo-03,
•      Int. Conf. on II-VI Compounds, Grenoble, 1997,
•      "Defect Annealing in a II-VI laser Diode Structure under Intense Optical
    Excitation"
•   26 F. P. Logue, P. Rees, J. F. Heffernan, C. Jordan, J. F. Donegan, J. Hegarty,
•      F. Hiei, S. Taniguchi, T. Hino, K. Nakano, and A. Ishibashi,
•      Tu-P103, Int. Conf. on II-VI Compounds, Grenoble, 1997,
•      "Optical Gain in ZnCdSe-ZnSe Quantum Wells"
•   26 Y. Hatanaka, T. Aoki, M. NAgai, and A. Ishibashi, SPIE Photonic West 98, 2-4,
•      San Jose, 1998, "Heavy p-doping of ZnSe-based II-VI Semiconductors using an
•      Excimer Laser"
•   27 K. Ando, T. Yamaguchi, K. Koizumi, T. Abe, H. Kasada, A. Ishibashi,
•      K. Nakano, and S. Nakamura, SPIE Photonic West 98, 2-2, San Jose, 1998,
•      " Deep Defect Center Characteristics of Wide-Bandgap II-VI and III-V Blue Laser
•       Materials"
•   28 M. W. Cho, J. H. Chang, H. Makino, T. Yao, A. Ishibashi, M. Y. Shen, and T. Goto,
•     2nd Int. Symp. on Blue Laser and Light Emitting Diodes, Tu-04, Chiba, Japan, 1998
•   “MBE growth and device characterization of Be-based materials for application to
•    blue-green laser diodes”
•   29 K. Godo, M. W. Cho, J. H. Chang, H. Makino, T. Yao, and A. Ishibashi, 2nd Int.
•   Symp. on Blue Laser and Light Emitting Diodes, Tu-P36, Chiba, Japan, 1998
•      “Optical properties of ZnSe/ZnMgBeSe QWs”
•   30 S. Kijima, H. Okuyama, Y. Sanaka, T. Kobayashi, and A. Ishibashi,
•      2nd Int. Symp. on Blue Laser and Light Emitting Diodes, Th-13, Chiba, Japan, 1998
•      “Optimized Contact Structure for II-VI Laser Diodes”
•   その他
•   応用物理学会講演奨励賞、加藤豪作、野口裕泰、長井政春、奥山浩之、
•   喜島 悟、石橋 晃、1998 年
•   “活性層成長条件の最適化による青緑色半導体レーザの長寿命化”

								
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