Physics 211A
SOLID STATE PHYSICS Problem Set VI: Band Diagram of p-Si MOSFET
L.J. Sham
Set up a procedure to compute the effective potential for the computation of the electrons in the inversion layer at zero temperature. You may use either the Schr¨ dinger-Poisson model or o the density function theory in the local density approximation. You may take the growth axis confinement (1) to limit the occupied subband to be one and (2) the confined wave functions to be well approximated by ze−αz for the first subbband. Take care to define all the input properties needed and all the quantities that need to be computed. Reference: T. Ando, A. B. Fowler, F. Stern, Rev. Mod. Physics, 54, 437 (1982), and Stern’s articles quoted therein.
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