2nd Generation Trench Gate Power MOSFETs

Shared by: mpm74462

Tags

power mosfets, power mosfet, international rectifier, power supply, power modules, fairchild semiconductor, power electronics, n-channel mosfets, high voltage, power management, igbt modules, power devices, breakdown voltage, power ics, power supplies

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posted:: 5/20/2010
language:: English
pages:: 1

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Document Sample

							Part Number:             IXTC200N075T

Description:             2nd Generation Trench Gate Power MOSFETs

Configuration:           Single

Package Style:           ISOPLUS220™

Status:                  Active Part




Parameter                                         IXTC200N075T

VDSS, max, (V)                                    75
ID(cont), TC=25°C, (A)                            110
RDS(on), max, TJ=25°C, (Ω)                        0.0055
Ciss, typ, (pF)                                   6800
Qg, typ, (nC)                                     160
trr, typ, (ns)                                    80
RthJC, max, (C/W)                                 1.00
PD, (W)                                           150

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