BCR 400W Active Bias Controller

Document Sample
BCR 400W Active Bias Controller Powered By Docstoc
					                                                                                                  BCR 400W


Active Bias Controller


Characteristics
• Supplies stable bias current even at low battery voltage
  and extreme ambient temperature variation

• Low voltage drop of 0.7V
Application notes
• Stabilizing bias current of NPN transistors and FETs from
  from less than 0.2mA up to more than 200mA

• Ideal supplement for SIEGET and other RF transistors
• also usable as current source up to 5mA




Type            Marking Ordering Code Pin Configuration                                              Package
BCR 400W W4s                     Q62702-C2481 1 GND/ENPN 2 Contr/BNPN 3 VS 4 Rext/CNPN SOT-343

                                         (ENPN,BNPN,CNPN are electrodes of a stabilized NPN transistor)
Maximum Ratings
Parameter                                                 Symbol                 Values               Unit
Supply voltage                                            VS                       18                 V
Control current                                           IContr.                  10                 mA
Control voltage                                           VContr.                  16                 V
Reverse voltage between all terminals                     VR                       0.5
Total power dissipation, TS = 117°C                       Ptot                     330                mW
Junction temperature                                      Tj                       150                °C
Storage temperature                                       Tstg                  - 65 ... + 150
Thermal Resistance
Junction ambient            1)                            RthJA                   ≤ 170               K/W
Junction - soldering point                                RthJS                   ≤ 100
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu




Semiconductor Group                                       1                                          Nov-27-1996
                                                                            BCR 400W




Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter                                Symbol               Values            Unit
                                                    min.      typ.     max.

DC Characteristics
Additional current consumption           I0                                     µA
VS = 3 V                                            -         20       40
Lowest stabilizing current               Imin                                   mA
VS = 3 V                                            -         0.1      -




DC Characteristics with stabilized NPN-Transistors
Lowest sufficient battery voltage        VSmin                                  V
IB (NPN) < 0.5 mA                                   -         1.6      -
Voltage drop (VS - VCE)                  Vdrop
IC = 25 mA                                          -         0.65     -
Change of IC versus hFE                  ∆ IC /IC                               ∆hFE/hFE

hFE > 50                                            -         0.08     -
Change of IC versus VS                   ∆ IC /IC                               ∆VS/VS

VS > 3 V                                            -         0.15     -
Change of IC versus TA                   ∆ IC /IC   -         0.2      -        %/K




Semiconductor Group                     2                                     Nov-27-1996
                                                                                                                              BCR 400W



Collector current IC = f(hFE)                                                       Collector Current IC = f(VS)
IC and hFE refer to stabilized NPN Transistor                                       of stabilized NPN Transistor
Parameter Rext. (Ω)                                                                 Parameter Rext. (Ω)

         10 3                                                                            10 3


         mA                                                                              mA
                                                                                                                                            2.1

IC                                                                                  IC                                                      5.9
         10 2                                                          5.9               10 2

                                                                                                                                            12.4




         10 1                                                          67                10 1                                               67




         10 0                                                          760               10 0                                               760



                                                                                                                                            4.3k


         10 -1                                                                           10 -1
              0      50        100   150      200       250        -   350                    0     2            4        6   8        V         11
                                                                   hFE                                                                 VS


Voltage drop Vdrop = f(IC)                                                          Collector current IC = f(Rext.)
                                                                                    of stabilized NPN Transistor


          1.0                                                                            10 3


                                                                                         mA


V drop      V                                                                       IC
                                                                                         10 2



          0.8

                                                                                         10 1


          0.7


                                                                                         10 0
          0.6




          0.5                                                                            10 -1
                -2             -1         0         1              2            3               0            1            2        3
             10           10         10        10             10        mA 10                10         10           10       10       Ohm
                                                                   IC                                                                  Rext.



Semiconductor Group                                                          3                                                     Nov-27-1996
                                                                                                                                   BCR 400W



Collector current TA = f(IC)                                               Control current I = f(Rext.)
of stabilized NPN Transistor                                               in current source application
Parameter: Rext.(Ω)

          10 3                                                                       10 1


          mA

                                                                2.2
 IC                                                                        IContr.
          10 2                                                                       mA
                                                                6



                                                                26
          10 1                                                                       10 0
                                                                65



                                                                290
          10   0
                                                                760



                                                                4.3k
          10   -1                                                                    10 -1
                                                                                            -1                0            1                2
               -40 -20       0   20    40   60   80 100 120 °C 160                       10              10           10               10       KOhm
                                                           TA                                                                                    Rext.


Control current I = f(TA)                                                  Control current I = f(VS)
in current source application                                              in current source application



           1.5                                                                        2.0

          mA
                                                                                      mA
           1.3
IContr.    1.2                                                             IContr.    1.6

           1.1
                                                                                      1.4
           1.0
           0.9                                                                        1.2

           0.8
                                                                                      1.0
           0.7
           0.6                                                                        0.8

           0.5
                                                                                      0.6
           0.4
           0.3                                                                        0.4
           0.2
                                                                                      0.2
           0.1
           0.0                                                                        0.0
             -20         0        20        40     60    °C          100                    0    1   2        3   4   5        6   7        8      V     10
                                                           TA                                                                                    VS



Semiconductor Group                                                    4                                                                    Nov-27-1996
                                                                                             BCR 400W



Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy


       400


       mW
                                                         Note that up to TS = 130°C
Ptot                                           TS
       300                                               it is not possible to exceed Ptot
                                 TA                      respecting the maximum
       250
                                                         ratings of VS and IContr.
       200                                               The collector or drain
                                                         current (respectively) of
       150
                                                         the stabilized RF transistor
       100                                               does not affect BCR 400
                                                         directly, as it provides just the
        50
                                                         base current.
         0
             0   20   40   60   80    100   120 °C 150
                                                TA ,TS




                           Typical application for GaAs FET
                           with active bias controller




Semiconductor Group                                  5                                        Nov-27-1996
                                                                             BCR 400W




  RF transistor controlled by BCR400




                                           Be aware that BCR 400 stabilizes bias
                                           current of transistors in an active control loop.


                                           In order to avoid loop oscillation (hunting),
                                           time constants must be chosen adequately,
                                           i.e. C1 >= 10 x C2




                 RX/TX antenna switch, compatible to control logic
                 and working at wide battery voltage range




Semiconductor Group                    6                                        Nov-27-1996
                                                          BCR 400W




                            Low voltage reference




                      Precision timer with BCR 400
                      providing constant charge current




Semiconductor Group                        7               Nov-27-1996

				
DOCUMENT INFO
Shared By:
Categories:
Stats:
views:36
posted:3/28/2010
language:English
pages:7
Description: BCR 400W Active Bias Controller