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									                   MICROSCOPY OF
            SEMICONDUCTING MATERIALS XIV
                      11-14 April 2005, University of Oxford, UK

                                     Co-Chairmen

                        Prof A G Cullis (University of Sheffield)
                        Dr J L Hutchison (University of Oxford)


                          POSTER PROGRAMME

Tuesday 12 April, 1310-1420

POSTER SESSION P1 (Topics A, B, C and D)

P1-1      Cubic GaN Quantum Dots Nucleated on Planar Defects
          D MÉNDEZ, 1 FM MORALES, SI MOLINA, 2 D ARAÚJO, 3E BUSTARRET, 4E
          MARTINEZ-GUERRERO and 4H MARIETTE, Universidad de Cádiz, Spain, 1 FG
          Nanotechnologie, Germany, 2INSA, France, 3LEPES- CNRS, France, 4CEA-
          DRFMC-SP2M & CNRS-LSP, France

P1-2      First Stages of Nucleation of GaN on (0001) Sapphire
          1
            YB KWOM, 1JH JE, P RUTERANA, G NOUET, ENSI, Caen, France, 1 Pohang
          University of Sciences and Technology, Korea

P1-3      InGaN/GaN Single Quantum Wells: their Luminescent and Nano-Structural
          Properties
          JS BARNARD, 1DM GRAHAM, 2TM SMEETON, MJ KAPPERS, 1P DAWSON,
          1
            M GODFREY and CJ HUMPHREYS, University of Cambridge, UK, 1 University
          of Manchester, UK, 2 Sharp Laboratories of Europe Limited, UK

P1-4      Evolution of InGaN/GaN Nanostructures and Wetting Layers During Annealing
          RA OLIVER, NK VAN DER LAAK, MJ KAPPERS, CJ HUMPHREYS,
          University of Cambridge, UK

P1-5      Dislocation Analysis of Thick GaN Films Grown by Hydride Vapour Phase Epitaxy
          B LEI, H YE, G YU, M QI, A LI, 1J CHEN, 2P RUTERANA and 2G NOUET,
          Shanghai Institute of Microsystem and Information Technology , China,
          1
            Laboratoire Universitaire de Recherche d’Alençon, France, 2ENSI, Caen, France

P1-6      Lattice Defects in Nonpolar A-Plane GaN Layer Grown on (1120) 4H-SiC by
          Organometallic Vapor Phase Epitaxy.
          DN ZAKHAROV, Z LILIENTAL-WEBER, 1 B WAGNER, 1ZJ REITMEIER, 1EA
          PREBLE and 1RF DAVIS, Lawrence Berkeley National Laboratory, USA, 1 North
                                            1
        Carolina State University, USA

P1-7    A TEM Study of AlN Interlayer Defects in AlGaN/GaN Heterostructures
        P CHERNS, C MCALEESE, R DATTA, MJ KAPPERS, CJ HUMPHREYS,
        University of Cambridge, UK

P1-8    Reduction of Threading Dislocation Density in GaN by Using SiN x Inter-Layers
        R DATTA, MJ KAPPERS, JS BARNARD and CJ HUMPHREYS, University of
        Cambridge, UK

P1-9    Structural Properties of InN Thin Films Grown with Variable Growth Conditions on
        GaN/AL2O3 by Plasma-Assisted MBE
        A DELIMITIS, PH KOMNINOU, TH KEHAGIAS, TH KARAKOSTAS, 1 E
        DIMAKIS, 1 A GEORGAKILAS, 2G NOUET, Aristotle University, Greece,
        1
          University of Crete, Greece, 2 ENSI, Caen, France

P1-10   TEM Characterization of Nitride-Based Heterostructures for Vertical Cavity Surface
        Emitting Lasers Structured by the Focused Ion Beam Technique
        R KRÖGER, C KRUSE, K SEBALD, J DENNEMARCK, D HOMMEL and A
        ROSENAUER, University of Bremen, Germany

P1-11   The Nucleating Structure for Cracks in AlGaN Epitaxial Layers
        RT MURRAY, 1 PJ PARBROOK, 1G HILL and 1IM ROSS,
        University of Liverpool, UK, 1 University of Sheffield, UK

P1-12   TEM Investigation of Tm Implanted GaN
        T WOJTOWICZ, F GLOUX, P RUTERANA, G NOUET, 1 K LORENZ AND 1E
        ALVES, ENSI, Caen, France, 1Instituto Tecnológico e Nuclear

P1-13   Characterization of Defects in ZnS and GaN
        J DENEEN, CR PERREY, S KUMAR and CB CARTER, University of Minnesota,
        USA

P1-14   Lattice Properties of Magnetic Impurity Doped GaN Layers Grown by Molecular
        Beam Epitaxy Using Raman Spectroscopy
        M ASGHAR, IH ASGHAR and M SHAHID, 1E BUSTARRAET, 2H MAITERRE,
        2
          S MARCET, Islamia University, Bahawalpur, Pakistan, 1LEPES-CNRS, France,
        2
          CEA, France

P1-15   Nanoanalysis of Heteroepitaxal SiGe/Si Quantum Cascade TH Z Emitting Structures
        D J NORRIS, AG CULLIS, 1 D PAUL , 2H GAMBLE, 3J ZHANG and 4R
        KELSALL, 2 University of Sheffield, UK, 1 University of Cambridge, UK, 2 Queens
        College, Belfast, 3Imperial College, London, UK; 4 University of Leeds, UK

P1-16   Si/Ge Multilayer Structure Incorporated into MBE Grown Si Whiskers
        N ZAKHAROV, P WERNER, G GERTH, L SCHUBERT, 1L SOKOLOV, U
        GÖSELE, Max-Planck-Institut für Mikrostrukturphysik, Halle (Saale), Germany,
        1
          Institute of Semiconductor Physics, Russia
                                            2
P1-17   Local Compositional Analysis of GeSi/Si Nanoclusters by Scanning Auger
        Microscopy
        GA MAXIMOV, DE NIKOLITCHEV, DO FILATOV, University of Nizhny
        Novgorod, Russia

P1-18   Strain Relaxation and Voids Reduction in SiC on Si by Ge Predeposition
        FM MORALES, P WEIH, TH STAUDEN, O AMBACHER and J PEZOLDT,
        Zentrum für Mikro- und Nanotechnologien, Ilmenau, Germany

P1-19   A study of SiGe/Si n -MOSFET processed and unprocessed channel layers using
        FIB and TEM methods
        ACK CHANG, DJ NORRIS, IM ROSS, AG CULLIS, SH OLSEN 1 , AG O’NEILL1
        University of Sheffield, UK, 1 University of Newcastle, UK

P1-21   Defect Generation in High In and N Content GaInNAs Quantum Wells: Unfaulting
        of Frank Dislocation Loops
        M HERRERA, D GONZÁLEZ, JG LOZANO, R GARCÍA, M HOPKINSON, 1HY
        LIU, 1 M GUTIÉRREZ and 1 P NAVARETTI, Universidad de Cádiz, Spain,
        1
          University of Sheffield, UK

P1-22   First-Principles Calculations of 002 Structure Factors for Electron Diffraction in
        Strained InxGa1-xAs
        A ROSENAUER, M SCHOWALTER and 1F GLAS, University of Bremen,
        Germany, 1CNRS, France

P1-23   Magic Matching in Semiconductor Heterojunctions
        B PÉCZ, A BARNA, 1 V HEERA and 1W SKORUPA, Hungarian Academy of
        Sciences, Budapest, Hungary, 1Institute of Ion BEAM Physics and Materials
        Research, Germany

P1-24   Changes in the Plasmon Peak Position with Different Experimental Conditions
        AM SÁNCHEZ, 1 R BEANLAND, AJ PAPWORTH, MH GASS and PJ
        GOODHEW, University of Liverpool, UK, 1Bookham Technology, UK

P1-25   Structural Characterisation of Zinc-Blende GaMnN Epilayers Grown by MBE as a
        Function of Ga Flux
        Y HAN, M W FAY, PD BROWN, SV NOVIKOV, KW EDMONDS, BL
        GALLAGHER, RP CAMPION AND CT FOXON, University of Nottingham, UK

P1-26   Investigation of the Electrical Activity of Dislocations in ZnO-Epilayers by
        Transmission Electron Holography
        E MÜLLER, P KRUSE, D GERTHSEN, 1 R KLING, 2 A WAAG, Universität
        Karlsruhe, Germany, 1 Universität Ulm, Germany, 2 Universität Braunschweig,
        Germany

P1-27   A TEM Study of Mn-Doped ZnO Layers Deposited by RF Magnetron Sputtering

                                            3
        M ABOUZAID, P RUTERANA, G NOUET, 1C LIU, 1F YUN, 1 B XIAO, 1 S-J
        1
          CHO, 1Y-T MOON and 1H MORKOÇ, ENSI, Caen, France, 1 Virginia
        Commonwealth University, USA

P1-28   Microstructure of Diluted Magnetic Semiconducting Oxides: Mn-Doped Cu2O Bulk
        Ceramics and Thin Films
        M WEI, A VENIMADHAV, KA YATES, D ZHI, MG BLAMIRE and JL
        MACMANUS-DRISCOLL, University of Cambridge, UK

P1-29   Quantitative Analysis of HRTEM Images by Pattern Recognition Methods
        J PIZARRO, E GUERRERO, T BEN, PL GALINDO, A YÁÑEZ and SI MOLINA,
        Universidad de Cádiz, Spain

P1-30   ConceptEM: A New Method to Quantify Solute Segregation to Interfaces or Planar
        Defect Structures by Analytical Transmission Electron Microscopy and Application
        to Inversion Domain Boundaries in Zinc Oxide
        T WALTHER, CAESER, Bonn, Germany

P1-31   Ab Initio Computation of the Mean Inner Coulomb Potential of Technological
        Important Semiconductors
        M SCHOWALTER, A ROSENAUER, 1D LAMOEN, 2 P KRUSE, 2D GERTHSEN,
        University of Bremen, Germany, 1 Universiteit Antwerpen, Belgium, 2 Universität
        Karlsruhe, Germany

P1-32   Simulations of the Electrostatic Potential in a Thin Semiconductor Specimen
        Containing a P-N Junction
        PK SOMODI, RE DUNIN-BOROWSKI, AC TWITCHETT, CHW BARNES, PA
        MIDGLEY, University of Cambridge, UK

P1-33   Three-Dimensional Analysis of the Dopant Potential of a Silicon P-N Junction
        AC TWITCHETT, TJV YATES RE DUNIN-BORKOWSKI, SB NEWCOMB and
        PA MIDGLEY, University of Cambridge, UK

P1-34   Investigation of the Electrical Activity of Dislocations in ZnO-Epilayers by
        Transmission Electron Holography
        E MÜLLER, P KRUSE, D GERTHSEN, 1 R KLING, 2 A WAAG, Universität
        Karlsruhe, Germany, 1 Universität Ulm, Germany, 2 Universität Braunschweig,
        Germany

P1-35   Off-Axis Electron Holography and Scanning Electron Microscopy on Gallium
        Nitride P-N Junctions Specimens Prepared Using Focused Ion Beam Milling
        ASW WONG, AC TWITCHETT, JS BARNARD, RE DUNIN-BORKOWSKI and
        CJ HUMPHREYS, University of Cambridge, UK

P1-36   Electron Holography of Dopant Potentials in Ar-Ion-Milled Semiconductor
        Junctions and Devices
        D ZHI, RE DUNIN-BORKOWSKI and PA MIDGLEY, University of Cambridge,
        UK
                                         4
P1-37     A study of dislocations in AlN and GaN films grown on sapphire substrates
          J BAI, T WANG, PJ PARBROOK, IM ROSS AND A G CULLIS
          EPSRC National Centre for III-V Technologies, University of Sheffield, UK



Wednesday 13 April, 1310-1420

POSTER SESSION P2 (Topics E and F)

P2-1      Effect of Annealing on Anticorrelated InGaAs/GaAs Quantum Dots
          M GUTIÉRREZ, M HOPKINSON, AI TARTAKOVSKII, MS SKOLNICK, 1M
          HERRERA, 1D GONZÁLEZ and 1 R GARCÍA, University of Sheffield, UK,
          1
            Univeridad de Cádiz, Spain

P2-2      Nanoanalysis of InAs/GaAs Quantum Dots using Low-Loss EELS Spectra
          AM SÁNCHEZ, MH GASS, AJ PAPWORTH, 1R BEANLAND, 1 V DROUOT and
          PJ GOODHEW, University of Liverpool, UK, 1Bookham Technology, UK

P2-3      Structural Analysis of the Effects of a Combined InAlAs-InGaAs Capping Layer in
          1.3-µm InAs Quantum Dots
          CM TEY, AG CULLIS, HY LIU, I M. ROSS and M HOPKINSON, University of
          Sheffield, UK

P2-4      Microstructural Studies of MBE Grown InAs Self Organised Quantum Dots on
          [110] Orientated GaAs Patterned Substrates
          IM ROSS, JC LIN, AI TARTAKOSKII, RS KOLODKA, R HOGG, M
          HOPKINSON, AG CULLIS, MS SKOLNICK, University of Sheffield, UK

P2-5      Compositional and Strain Distribution in InAs/GaAs(001) Stacked Quantum Rings
          T BEN, J OLVERA, SI MOLINA, R GARCÍA, 1D GRANADOS and 1JM
          GARCÍA, Universidad de Cádiz, Spain, 1Instituto de Microelectrónica de Madrid,
          Spain

P2-6      Interface Polarity and Shapes of Pores in InP
          E SPIECKER, M RUDEL, M LEISNER, S LANGA and W JÄGER, Christian-
          Albrechts University, Kiel, Germany

P2-7      Quantitative Measurements of the Inhomogeneous Strain Field of Stacked Self-
          Assembled InAs/InP(001) Quantum Wires by the Peak Finding Method
          T BEN, R GARCÍA, 1D FUSTER, 1 MU GONZÁLEZ, 1Y GONZÁLEZ, 1L
          GONZÁLEZ, 2 S KRET and SI MOLINA, Universidad de Cádiz, Spain, 1Instituto
          de Microelectrónica de Madrid, Spain, 2Institute of Physics PAS, Poland

P2-8      Structural and Compositional Analysis of (Ga,In)(N,As)/GaAs(111) Quantum Wells
          A TRAMPERT, X KONG, E LUNA, 1J MIGUEL-SANCHEZ and 1 A GUZMAN,

                                           5
        Paul-Drude Institute for Solid State Electronics, Berlin, Germany, 1 Universidad
        Politecnica de Madrid, Spain

P2-9    In-Distribution in InGaAs Quantum Wells and Dots
        D LITVINOV, D GERTHSEN, 1 A ROSENAUER and T PASSOW, Universität
        Karlsruhe, Germany, 1Institut für Festkörperphysik, Germany

P2-10   Activation Energy for Surface Diffusion in GaInNAs Quantum Wells
        M HERRERA, D GONZÁLEZ, JG LOZANO, R GARCÍA, 1 M HOPKINSON, 1HY
        LIU, 1 M GUTIÉRREZ and 1 P NAVARETTI, Universidad de Cádiz, Spain,
        1
          University of Sheffield, UK

P2-11   Quantum Effects in Band Gap-Modulated Amorphous Carbon Superlattices
        V STOLOJAN, 1P MOREAU, S RAVI and P SILVA, University of Surrey, UK,
        1
          Institut des Matiriaux Jean Rouxel, France

P2-12   Use of an Empirical Potential to Describe the Observed Surface Geometry of III-V
        Semiconductor Nanostructures
        D POWELL, MA MIGLIORATO and AG CULLIS University of Sheffield, UK

P2-13   Microscopy of Nanoparticles for Semiconductor Devices
        J DENEEN, CR PERREY, Y DING, A BAPAT, SA CAMPBELL, U
        KORTSHAGEN and CB CARTER, University of Minnesota, Minneapolis, USA

P2-14   HRTEM and µ-Raman Analyses of NC-Silicon Film Grown by LEPECVD for PV
        Applications
        M BOLLANI, S BINETTI, M ACCIARRI and 1H VON KÄNEL, Università
        Milano-Bicocca, Milan, Italy, 1 Politecnico di Milano, Italy

P2-15   TEM-Characterization of Magnetic Sm and Co-Nanocrystals in SiC
        J BISKUPEK, U KAISER, 1 H LICHTE and 1 A LENK, University Ulm, Germany,
        1
          Technical University Dresden, Germany

P2-16   Structural Characterisation of Doped and Undoped Nancrystalline Zinc Oxides
        Deposited by Ultrasonic Spray Assisted Chemical Vapour Deposition
        M WEI, N KHARE, D ZHI and JL MACMANUS-DRISCOLL, University of
        Cambridge, UK

P2-17   HRTEM and XRD Analysis of P6mm and Ia3d Double Gyroidal WO3 Structures
        E ROSSINYOL, J ARBIOL, F PEIRÓ, A CORNET, JR MORANTE, 1B TIAN and
        1
          D ZHAO, Universitat de Barcelona, Spain, 1 Fudan University, China

P2-18   Indentation-Induced Crystallization and Phase Transformation of Amorphous
        Germanium
        G PATRIARCHE, 1 E LE BOURHIS, 2 MMO KHAYYAT AND 2MM CHAUDHRI,
        Laboratoire de Photonique et de Nanostructures, Marcoussis, France, 1 Université de
        Poitiers, France, 2 University of Cambrindge, UK

                                           6
P2-19     Structure and Electrophysical Properties of Nanocomposite based on the Si-SiO2
          System
          VI SOKOLOV, LM SOROKIN, AE KALMYKOV, 1 LV GRIGORYEV, Ioffe
          Physicotechnical Institute, St Petersburg Russia, 1St. Petersburg University, Russia

P2-20     Optimization of TEM Sample Preparation of N Containing III/V Semiconductors by
          AFM on TEM Samples and FE Simulation
          K VOLZ, T TORUNSKI, O RUBEL and W STOLZ, Philipps University Marburg,
          Germany



Thursday 14 April, 1310-1420

POSTER SESSION P3 (Topics G, H, I, J and K)

P3-1      Progress Towards Using Electron Holography as a Quantitative Dopant Profiling
          Technique
          D COOPER, AC TWITCHETT, RE DUNIN-BORKOWSKI and P MIDGLEY,
          University of Cambridge, UK

P3-2      Exploitation of Surface Plasmon Losses for TEM Characterisation of
          Nanostructures in Semiconductor Memory MOS Devices
          G NICOTRA, C SPINELLA, S LOMBARDO, RA PUGLISI, 1J BUCKLEY and 1B
          DE SALVO, CNR-IMM, Catania, Italy, 1 CEA-Leti-D2NT-LNDE, France

P3-3      Investigation of Al-Si Schottky Barriers by Means of EELS
          M STÖGER-POLLACH, P SCHATTSCHNEIDER, P PONGRATZ, Institut für
          Festkörperphysik, Vienna, Austria

P3-4      TEM Study of Silicon Implanted with Fluorine and Boron Applied to Piezoresistors
          Manufacturing
          M WZOREK, J KĄTCKI, B JAROSZEWICZ, K DOMAŃSKI, P GRABIEC,
          Institute of Electron Technology, Warsaw, Poland

P3-5      Dynamics of Au Adatoms on Electron-Irradiated Rough Si Surfaces
          K TORIGOE, Y OHNO, 1T ICHIHASHI and S TAKEDA, Osaka University, Japan,
          1
            Fund. & Envir. Res. Labs, Japan

P3-6      Synthesis and Characteristics of Semiconducting Thin Films Prepared Via a High-
          Pressure Crystallization Process at Low Temperatures
          CHUNG-HSIN LU, National Taiwan University, Taipei, Taiwan

P3-7      Corrosion of FIB-Milled Cu During Air Exposure
          H BENDER, O RICHARD, P VAN MARCKE and C DRIJBOOMS, IMEC,
          Leuven, Belgium


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P3-8    The Application of a Gaseous, Low-Energy, Focused Ion Source to Remove
        Damage from TEM Specimens
        PE FISCHIONE, RR CERCHIARA, JM MATESA, AC ROBINS and DW SMITH,
        E.A. Fischione Instruments, Inc, Pennsylvania, USA

P3-9    Failure Analysis Studies in Pseudomorphic SiGe Channel P-MOSFET Devices
        ACK CHANG, IM ROSS, DJ NORRIS, AG CULLIS, 1YT TANG, 1C CERRINA,
        1
          AGR EVANS, University of Sheffield, UK; 1 University of Southampton, UK

P3-10   Focused Ion Beam Micro-Milling of GaN Photonic Devices with Gas Enhanced
        Etching Techniques
        WC HUNG, T WANG, F RANALLI, PJ PARBROOK and AG CULLIS,
        University of Sheffield, UK

P3-11   Organic Semiconductor Micro-Pillars Processed by Focused Ion Beam Micro-
        Machining Techniques
        WC HUNG, A ADAWI, LG CONNOLLY, DG LIDZEY, A TAHRAOUI and AG
        CULLIS, University of Sheffield, UK

P3-12   Measurement of Field-Emission Properties of a Single Crystallized Silicon Emitter
        Using Scanning Electron Microscopy
        TC CHENG, HT HSUEH, WJ HUANG, 1SC KUNG, 2JS WU AND MN CHANG,
        National Nano Devices Laboratories, Hsinchu, Taiwan, 1Industrial Technology
        Research Institute, Taiwan, 2National Chaio Tung University, Taiwan

P3-13   Failure Analysis of Degraded (In,Ga)P/GaAs Hetero Junction Bipolar Transistors by
        TEM
        H KIRMSE, W NEUMANN, 1 U ZEIMER and 1R PAZIRANDEH, Humboldt-
        Universität zu Berlin, Germany, 1Ferdinand-Braun-Institut für
        Höchstfrequenztechnik, Germany

P3-15   FIB Specimen Preparation Technique for HRTEM Observation by using the Novel
        Ar Ion Milling Method
        K TANABE AND T MATSUDA, The Furukawa Electric Co, Yokohama, Japan

P3-17   Integrated Solutions for Nanotechnology: High Resolution SEM/SAM Combined
        with State-of-the-Art SPM Technology
        M. MAIER, J. WESTERMANN, M. GREEN, J.ZACH1, J. BIHR2, G. SCHÄFER,
        J. POPPENSIEKER, B. GÜNTHER, A. FELTZ, T. BERGHAUS, OMICRON
        NanoTechnology GmbH, Germany; 1OMICRON NanoTechnology Ltd, East
        Grinstead, UK; 2CEOS GmbH, Germany

P3-18   Ultimate Nanoprobing in UHV: Four Independent Scanning Tunnelling
        Microscopes Navigated by High Resolution UHV SEM
        M. MAIER, J. WESTERMANN and M. D. GREEN 1; OMICRON NanoTechnology
        GmbH, Germany; 1OMICRON NanoTechnology Ltd, East Grinstead, UK

P3-19   Photoperturbation Effect on Local Current Leakage in Ultrathin SiO2 Films Studied
                                          8
        by Conductive Atomic Force Microscopy
        CY CHEN and MN CHANG, National Nano Device Laboratories, Hsinchu, Taiwan

P3-20   Front-Wing Cantilever Significantly Suppressing Photopertubations within
        Scanning Capacitance Microscopic Images
        M NAN CHANG and CY CHEN, National Nano Device Laboratories, Hsinchu,
        Tawian

P3-21   AFM Study of Silicon Microdefect Structure Transformation after Pulse Ion
        Irradiation
        AN KISELEV, GA MAXIMOV, VA PEREVOSHIKOV, VD SKUPOV and DO
        FILATOV, University of Nizhny Novgorod, Russia


P3-23   Mapping of the Effective Mass of Electrons in III-V Semiconductors
        MH GASS, AM SANCHEZ, AJ PAPWORTH, TJ BULLOUGH, 1R BEENLAND
        and PR CHALKER, University of Liverpool, UK,1 Bookham Technology, UK

P3-24   Constructing Shapes from Shading in Electron Microscopy
        CGH WALKER and M EL-GOMATI, University of York, UK

P3-25   Low Energy Scanning Analytical Microscopy (LeSAM) for Auger and Low Voltage
        SEM Imaging of Semiconductors
        V ROMANOVSKY, M EL-GOMATI and 1J DAY, University of York, UK,
        1
          University of Bristol, UK

P3-26   The Electric Field and Dopant Distribution in p-i-n Structures Observed by
        Ionisation Potential (Dopant Contrast) Microscopy in the HRSEM
        E GRUNBAUM, Z BARKAY, Y SHAPIRA, 1 K BARNHAM, 1DB BUSHNELL,
        1
          NJ EKINS-DAUKES, 1M MAZZER and 2PR WILSHAW, Tel-Aviv University,
        Israel, 1Imperial College of Science, Technology, Medicine, UK, 2 University of
        Oxford, UK

P3-27   Localized Energy Levels of Dislocations in ZnSe Revealed by Polarized
        Cathodoluminescence Spectroscopy under Light Illumination
        Y ONHO, Osaka University, Japan

P3-28   Electron Microscopy Characterisation of ZnS:Cu Phosphors
        A ŁASZCZ, J KĄTCKI, J RATAJCZAK, M PŁUSKA and M CIEŻ, Institute of
        Electron Technology, Warsaw, Poland

P3-29   Resistive Contrast in R-EBIC from Thin Films
        K DUROSE and 1H TATSUOKA, University of Durham, UK, 1 Shizuoka
        University, Japan

P3-30   A Diode Model for EBIC Contrast in ZnO
        A WOJCIK and L WOJCIK, University College, London, UK

                                          9
P3-31   SE Contrast of Doped Semiconductor: The Effect of Annealed Al-Si Schottky
        Barrier
        F ZAGGOUT and M EL-GOMATI, University of York, UK




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