Process Flow - PowerPoint - PowerPoint
Document Sample


1
Trends in development of breakthrough technologies in 2001-2010,
investment volumes for their implementation and market capacity forecast
INVESTMENTS, TARGET ACCORDING TO THE GOVERNMENT
Investments, PROGRAM (197,8 KK USD) Market capacity,
KK USD INVESTMENTS, REAL AND EXPECTED (197,8 KK USD) billion USD
100 MARKET CAPACITY, billion USD 500
100
90 450
90
80 400
80
350
70
70
60
60 300 Ряд
50
50 95
405
250 Ряд
40
40 85 78 315
200 Ряд
30
30
210 53 150
20
20
23 122 26
100
10
10
20 15 50
0
0 0
μм
1,2-0,8 1 0,8-0,5 μм
2 μм
0,5-0,353 0,35-0,25μм
4
2001-2003 2004-2005 2006-2007 2008-2010
2004
2
Design rules for semiconductor products and sales share in
the world market Market capacity , $
Силовая automobile electronics 80%
Power and и автомобильная электроника 80% 10 432 000 000
Промышленная и оборонная техника 80%
Industrial and military equipment 80% 11 736 000 000
Бытовая электроника 70%
Consumer electronics 70% 19 397 000 000
>1мкм Телекоммуникации 60%
Telecommunications 60% 11 247 000 000
Вычислительная техника
Computer engineering 30% 30% 5 868 000 000
Мобильная
Mobile 10% связь 10%
1 956 000 000
Персональные компьютеры 10%
Personal computers 10%
4 890 000 000
1мкм
Силовая automobile electronics 20%
Power and и автомобильная электроника 20% 2 608 000 000
Промышленная и оборонная техника 20%
Industrial and military equipment 20% 2 934 000 000
Бытовая электроника 30%
Consumer electronics 30% 8 313 000 000
<1мкм Телекоммуникации 40%
Telecommunications 40% 7 498 000 000
Computer engineering 70% 70%
Вычислительная техника 13 692 000 000
Мобильная
Mobile 90% связь 90% 17 604 000 000
Персональные компьютеры 90%
Personal computers 90% 44 010 000 000
0 20 40 60 80 100
2004
3
Production volumes
in years, $x109
World tendency in the
market development
depending on minimal
design rules
Minimal size of
element
PRODUCTION
Life cycle of
Sales volumes
Profitability
microelectronic 25-40% 15-25% below 10%
products
research, Introduction
design/developme
nt
Introduction growth maturity drop Life cycle
1-2 years 1 year 3-5 years 2-3 years
Fundamental stages
Equipment
investigation, design
Costs
Technologies
and research
Products
2004
4
What do we know about our
competitors
China
Assembly
Started in 1990 IC production – 10 companies
(Motorola, AMP, Fairchild, Hitachi, IRM, Lute, NEC,
200 mm – 9 factories Samsung, Sony, ST, Toshiba)
in 6 cities (Suzhou, Shanghai, Tiaujin, Beijing, Wuxi,
150 mm – 10 factories Shenzhen)
125 mm – 4 factories 1.2 kk USD in 2003, and 15.35 kk USD by 2010, that made
100 mm – 5 factories 44% of the world output
Total: 28 factories SMIC 1300 K w/year 11 K w/year
Grace 1000 K w/year 83 K w/year
Production Hua Hay NEC 700 K w/year 58 K w/year
volumes Otres 400 K w/year 92 K w/year
Total 4100 K w/year 340 K w/year
2004
5
What do we know about our
competitors
RUSSIA
Joint-stock company “Angstrem”
Manufacturing capacities :
- CMOS, BiCMOS and MOS ICs with 1.5-2.0 μm design rules on Joint-stock company “Micron”
100 mm wafers,
Manufacturing capacities :
- LSI and VLSI on CMOS and BiCMOS technologies with 0.8 - 1.2
- IC on CMOS, BiCMOS and MOS technologies with 1.5-
μm design rules on 150 mm wafers.
2.0 μm design rules on 100 mm wafers
Perspective - project FAB-2: production of ICs with 0.25-0.35μm
design rules on 200 mm wafers. Perspective - project “Set up of modern fabs for
production of competitive microelectronic products based
on advanced technologies" : wafer fabs with 0.5-0.35 μm
Estimated market capacity - design rules on 200 mm wafers
500-800 kk USD
Import ICs
Russian ICs Research Institution of System
Analysis of the Russian Academy of
Science
Research Institution of System Analysis of the Russian
Domestic ICs Academy of Science has the capacities for production of
10-15%
6-9% Integral’s ICs
ICs with 0.35 μm design rules on 150 mm wafers with
up to 500 w/month output)
2004
6
Our advantages
over competitors
• orientation to development of several basic technological processes (CMOS, bipolar,
BiCMOS) and not to one or two processes as usually
• clean technological module for production of ICs with 0.8 μm design rules
• design center («Belmicrosystems» Design Center) equipped with modern design and
development equipment and able to develop ICs and technological processes with submicron
design rules
• reserve and experience in basic technological operations based on fundamental researches
• cheap skilled labor and specialists
• certification of Quality System for compliance with the requirements of International
Standards ISO 9000
• cheap land and energy
• favorable tax policy
2004
7
Problem description
Morally and physically obsolete equipment
Low efficiency
Results
Limited technological potentials
Reduction of occupied market segment
Solutions
Necessity of engineering infrastructure and clean rooms for
0.35 μm design rules.
Setting up the production of ICs with 0.35 μm design rules.
2004
8
Project realization
Project constituents:
Production line modernization (engineering structures,
clean rooms, etc.);
Technology transfer (route, list of technological
operations, list of equipment, technical requirements for
VLSI design/development);
Delivery of set of special process and check and
measurement equipment;
Personnel training
Production set up
2004
9
Problems to be solved for the objective achievement
1. Selection of silicon VLSI BiCMOS type with 0,5 μm design rules.
2. Determination of the minimal required and sufficient list of technological operations.
3. Determination of the minimal required and sufficient list of special process equipment and
check and measurement equipment.
4. The same items like items1,2,3, but for VLSI CMOS with 0,35 μm design rules.
5. Purchasing special process equipment and check and measurement equipment.
6. Delivery, installation and start-up of special process equipment and check and measurement
equipment.
7. Preparation of Module 7 clean rooms.
8. Appraisal of Module 7:
constructions: walls, ceilings, floors,
vibrocharacterization,
air preparation: conditioners, filters, recycle system, inspection, control and monitoring
system,
water preparation: DI water, recycled water, drinking water, etc.
drains, cleaning system,
gas,
power,
vacuum,
Totally 20 power supply units of “REM” factory.
9. Development and implementation of basic technology.
10. Design/development and manufacture of products.
11. Selection and training of personnel.
12. Promotion of products in the market.
13. Switching the production line to the required design rules.
2004
10
Project realization options
Option Month Cost, Mio $
A License technology purchasing 24 29,6
B Development of technology by 57 20,6
own means
C Obtaining of technology and kit of
technical documentation from a 36 21,3
shut-down factory
D Purchasing of unlicensed
technology from a group of 26 22,0
foreign specialists under a special
contract
2004
11
DEVELOPMENT OF NEW TECHNOLOGIES
– development of technologies by own means
100% cost (20,6 kk USD) 100% development duration (57 months)
– purchasing the unlicensed technology from a group of foreign specialists under a special contract
107% cost (22 kk USD) 46% development duration (26 months)
Options 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42 45 48 51 54 57 60
Actions
1. Financial and technical agreement
2. Technology transfer 1 2 3 4
2а. Development of a preliminary route, list of operations,
set of equipment 1 – purchasing the technological process: description,
4. IC design and foundry-orders for pilot lots route, design rules, spice-parameters
2 – technological process
3. Purchase and delivery of the equipment set 3 – introduction and testing
preparation
4. Installation, start-up, acceptance according to OEM’s 4 –technological support
specification
5. Personnel training during technological operations
6. Development of test matrix design and technology
7. Test matrix production production line technological
start-up
8. Research, analysis, extraction of spice parameters of test
matrix element base
9. Development of structure and technology of the 1st IC
10. Manufacture of engineering lot of the 1st IC
11. Research, analysis, extraction of spice parameters of
commercial IC element base, structure and technology
correction (iteration 1)
12. Manufacture of commercial IC engineering lot
13. Commercial IC testing (3000 h)
14. Testing at customer’s site (2х3000 h)
15. Start-up of premass (mass) production Loan repayment start Loan repayment start
2004
12
Full Process Transfer Schedule
Implementation Ramp-up
Activity Preparation phase
phase
1. Finalization of technical
annex
2.Transfer of documentation partner
3.Equipment procurement Integral
4.Personnel training partner
5.Design of transfer vehicle
partner Integral
6.Validation of process steps
Integral + partner
7.Validation of modules
Integral + partner
8.Full process integration
Process Acceptance Integral + partner
Integral
9.Transfer support +
aftercare Transfer support Aftercare
2004
13
EXTERNAL APPRAISAL OF THE PROJECT
1. Appraisal of Module 7 and Module 8 clean rooms and utilities made by
Siemens Industrial Building Consultants GmbH:
• the possibility of setting up the production on CMOS technology with
0.35 μm design rule was confirmed;
• the complete list of works aimed at modernization of engineering
systems, including the clean rooms construction, equipment and utilities
was determined;
• the cost of works for Module 7 and Module 8 was evaluated.
2. The appraisal of financial and economical status of State-owned
enterprise «Semiconductor devices Factory» as for 01.10.2003 was made
by Joint-stock company «CONSULTAUDIT»:
• financial and economical status of the enterprise is considered to be
satisfactory;
• in general the enterprise is solvent and financially stable.
2004
14
REQUIRED SPECIAL PROCESS EQUIPMENT
Number of
№
Operation Equipment type Company, country equipment Unit price, k $ Cost, k $
п/п
units
1 Photolithography
1.1 Coat/develop DNS80A Dainnippon screen, Japan 1 588 588
1.2 Step/align NSR 2205i14E2 Nikon, Japan 1 1450 1450
2 Plasma etch
2.1 Nitride, Poly etch TCP 9400 Lam Research, USA 1 400 400
2.2 Plasma asher MATRIX 1108 Matrix, USA 1 300 300
2.3 Oxide etch TCP 9500 Lam Research, USA 2 450 900
2.4 Metal etch TCP 9600 Lam Research, USA 2 500 1000
3 Implantation Precision 9500xR Applied Materials, USA 1 1000 1000
4 Oxidation, diffusion, anneal Alpha 8S TEL, Japan 7 250 1750
5 RTP AG 8800 Metron Technology, USA 1 180 180
6 Metal sputtering
6.1 Conductive and barrier layers sputtering AMT Endura 5500 Applied Materials, USA 1 700 700
6.2 W-CVD and etchback P-5000 Applied Materials, USA 1 800 800
7 Deposition
7.1 Nitride LPCVD Alpha 8S TEL, Japan 1 250 250
7.2 Poly LPCVD Alpha 8S TEL, Japan 1 250 250
7.3 BPSG deposition WJ TEOS 999 Watkins-Jonson Company, USA 1 200 200
8 Химобработка
8.1 RCA cleaning FSI Mercury MP FSI International, USA 1 400 400
8.2 Etching, nitride stripping DNS WS820 Dainnippon screen, Japan 1 300 300
8.3 Photoresist stripping FSI Mercury MP FSI International, USA 1 400 400
8.4 PERP stripping/organic SST Semitool, Great Britain 1 400 400
Amount 27 11268
Equipment type, producer and the equipment cost shall be clarified while signing the contract
2004
15
REQUIRED CHECK AND MEASUREMENT EQUIPMENT
№ Function Equipment type Company, country Quantity Цена, Стоим
(technological operation) тыс.$ т
1. Wafer inspection (from 0.5 μm ) I N S 3 0 0 0 L e i c a , G e r m a n y 1 4 2 0
2. Dimension control (SEM) from 0.35 μ m S 7 0 0 0 H i t a c h i , J a p a n 1 7 0
3. Контроль повторяющихся дефектов KLA 2135 KLA -Tencor, USA 1 70
Advanced photometric and ellipsometric control system (film
4. APECS 3000 Leica, Germany 1 270
thickness control)
5. Small dose control ThermaProbe 400 Thermawave, USA 1 20
6. Resistivity control RS-55 KLA -Tencor, USA 1 30
7. D, p control for epitaxial films ECO-8N Nicolet, USA 1 110
8. Structure profile control AlphaStep 500 KLA -Tencor, USA 1 40
9. Control of B and P composition in BPSG Rigaku 3620 Rigaku, Japan 1 160
10. Introduced defects control Surfscan 7600 KLA -Tencor, USA 1 200
11. Repeatable defects control (from 0.3μm ) L M S I P R O L e i c a , G e r m a n y 1 4 8 0
12. Particle analysis in fluids Model 8014 Hiak Royko, USA 3 10
SSM-150, Solid State Measurement,
13. Resistivity and carrier density profiles measurement 1 70
SSM-2000 USA
Amount 15 1
Total amount 42 1
Equipment type, producer and the equipment cost shall be clarified while signing the contract
2004
16
Our potentials
All factories of “Integral"
200 mm wafers
200 mm – 5000 wafers/month
150 mm – 7500 wafers/month Total:10500 wafers/month
100 mm – 50000 wafers/month
2004
17
Economics
Market of State-owned Enterprise
«Semiconductor Devices Factory»
• telecommunications - 1.37 kk USD/year (India)
• watch/clock and melody IC (the year 2005) - 6-8 kk USD/year
• calculator IC - 2-3 kk USD/year
• analog, logic ICs, microcontrollers, memory ICs – sales activation and
market expansion
• computer IC – restoring the relations with the companies of Russian defense
establishments, obtaining the status of independent supplier of specific ICs
according to own technical specifications
• net income shall make 11 - 15 kk USD
• net profit makes 5 - 6 kk USD
2004
18
Forecast of financial and economic activity
Project realization will allow to speed up the turnover of floating assets of the
company by 41 day. The total growth of net floating assets will make 14845 k USD
(including current activity of the company - 275 k USD in 2004 at the cost of the
project realization in the period from 2005 till 2011 - 14507 k USD).
Except the growth of net floating capital the own funding sources are as follows:
accumulated depreciation fund makes 4638 k USD and the current depreciation in
2004 makes 1158 k USD ( 204 k USD will be spent for the project realization in 2005) .
Reserve resource of own funds for the project realization means demand balance on
bank accounts of the company on 01.01.2004 to the sum of 42 k USD.
The sum of net income (net profit + depreciation) within the period involved will
increase from 2469 k USD in 2004 up to 13110 k USD in 2001.
The project can be realized, since the sum of accumulated money balance is positive
for every year of the project realization. The total sum of the accumulated balance will
make 17024 k USD with the growth in 2011.
2004
19
КАЛЕНДАРНЫЙ ГРАФИК РЕАЛИЗАЦИИ ПРОЕКТА
Schedule of the project realization
Этапы осуществления
Stages of the project Ед.
Mes. Всего по
Total
проекта
realisation измер.
unit проекту 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
1. Принятие решения.
1.Making decision.
Разработка бизнес-плана
Business plan development
2. Определение перечня
2.Development the
необходимого оборудования и
required equipment and
поставщиков
suppliers
3. Preparation of the
3. Подготовка площадей area
для установки и монтажа
for the equipment
оборудования
installation
4. Purchasing and delivery
4. Закупка, доставкаоборуд,,
таможенные платежи,уста-новка и
of the equipment, customs тыс.$
K 13238
монтаж
payment, installation
5. Developing of production
5. Освоение производствен-ных
мощностей, наращиваниеof
capabilities, increase
производственных мощностей
production capacities
ИТОГО, млн.$
Total, Mil.$:
6. Obtaining the loan
6. Получение кредита тыс.$
K 12000
7. Выплата процентов
Loan interest repayment
по кредиту
тыс.$
K 7200 1440 1440 1412 1243 915 555 195 -
8. Loan repayment
8. Погашение кредита тыс. $
K 12000 500 2500 3000 3000 3000 -
2004
20
Project schedule «Setting up a production line of CMOS IC onизготовлениюwith 0.5 СБИС на пластинах диаметром 200 мм с
Создание субмикроннойпилотной линии по 200 mm wafers КМОП µm design rule (4000 wafers/month)
График проекта "
and pilot line мкм (1000 withмес) и с проектными но
рмами 0.35 мкм м
проектными нормами 0.5of CMOS IC пл./ 0.35 µm design rule (1000 wafers/month)» (1000 пл./ ес)"
1 год 2 год
1 2 3 4 5 6 7 8 9 10 11 12 1 2 3
1 Трансфер технологии
1. Technology transfer
1.1 Передача маршрута
1.1 Process flow transfer
1.2 Передача комплекта СТО и КИО
1.2 Equipment set transfer
1.3 Technical операционной тех.
1.3 Передачаdocumentation transferдокументации
1.4 Передача SPICE-параметров
1.4 SPICE parameters transfer
1.5 Передача правил проектирования
1.5 Design rules transfer
1.6 Обучение у поставщика технологии
1.6 Training provided by the supplier
1.7 “Technology transfer” трансфера технологии"
1.7 Перевод комплекта "kit translation
1.8 “Technology transfer” ТД трансфера технологии"
"
1.8 Изучение комплекта kit study
2 Закупка комплекта СТО и КИО
2. Equipment purchase
2.1 Заключение контрактов
2.1 Contract signing
2.2 Транспортировка
2.2 Transportation
2.3 Монтаж
2.3 Installation
2.4 Запуск
2.4 Start up
2.5 Personnel персонала на операциях СТО и
2.5 Обучениеtraining on operations of equipment КИО
3 Обучение на курсах английского языка
3. English language courses
4 Стройка и модернизация модуля
4. Module 7 construction and upgrading
4.1 Фундаменты
4.1 Foundation
4.2 Деионизованная вода
4.2 DI water
4.3 Газы
4.3 Gases
4.4 Микроклимат
4.4 Microclimate
5. Purchase of wafers for equipment start up
5 Закупка пластин под запуск СТО
6. Purchase of spare parts
6 Закупка расходных материалов
7. Selection of IC, technical specs for design
7 Выбор ИМС, выдача ТЗ на дизайн
8. Development of technology and construction
8 Разработка технологии, конструкции
9. Technical start up of the process stages
9 Технологический пуск операций
10. Formation of
10 Сбор блоковthe blocks
11. Formation of the
11 Сбор маршрутаwhole route
12. Pilot lot start up
12 Запуск пилотной партии
13. Making the reticles
13 Изготовление комплекта МПО
2004
21
Expenditures schedule, K$
Общие инвестиционные затраты по проекту, тыс. долл.
14000
12000
10000
тыс. долл.
8000
K$
6000
4000
2000
0
2004 2005 2006 2007 2008 2009 2010 2011 2012
Годы
Years
1. СОБСТВЕННЫЕ СРЕДСТВА - всего
1. Own means - total
2.ИНОСТРАННЫЕ КРЕДИТЫ КОММЕРЧЕСКИХ БАНКОВ
2. Foreign loans from commercial bancs
2004
22
Debts repayment at state -owned enterprise “semiconductor Devices Factory, K$
Расчет погашения долговых обязательств по УП «Завод полупроводниковых приборов»,
тыс. USD
16000
14000
12000
10000
тыс. USD
K$
8000
6000
4000
2000
0
2005 2006 2007 2008 2009 2010 2011 2012
Годы
Years
сумма основного долга
Primary debt sum Interest and primary debt процентов
сумма основного долга и sum погашение основного долга
Primary debt repayments
Loan debt
задолженность по кредиту Interest and primary долга и процентов
погашения основногоdebt repayments
2004
23
Questions
2004
Get documents about "