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Demonstration of AlGaN-Based Deep-Ultraviolet Light- Emitting

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					Demonstration of AlGaN-Based Deep-Ultraviolet Light-
Emitting Diodes on High-Quality AlN Templates

Authors: Yusuke Sakai, Youhua Zhu, Shigeaki Sumiya, Makoto Miyoshi, Mitsuhiro Tanaka, Takashi 
Egawa 

 
 
The authors demonstrate AlGaN‐based deep‐ultraviolet light‐emitting diodes (DUV‐LEDs) on high‐
quality AlN/sapphire template (AlN template) by evaluating its characteristics. LED structures can be 
grown directly on 2‐in.‐diameter AlN template by metal–organic chemical vapor deposition. AlGaN 
epilayers are confirmed to have high crystal quality on AlN template through X‐ray diffraction (XRD) 
and cross‐sectional transmission electron microscopy (TEM). The fabricated LEDs exhibit a sharp 
single peak emission at DUV region around 260–270 nm from electroluminescence spectra 
measured at room temperature. The light intensity and current–voltage characteristics are improved 
by using higher quality AlN template as underlying substrate. This could facilitate the production of 
high‐performance DUV‐LEDs. 

 

http://www.ipap.jp/jjap/rss/index.cgi?vol=49&page=022102 

				
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Description: Demonstration of AlGaN-Based Deep-Ultraviolet Light- Emitting