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IRFI9630 G by fatarwiri

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									International
Rectifier
PD-9.838
IRFI9630G
HEXFET® Power MOSFET
•	Isolated Package
•	High Voltage lsolation= 2.5KVRMS ©
•	Sink to Lead Creepage Dist.= 4.8mm
•	P-Channel
•	Dynamic dv/dt Rating
•	Low Thermal Resistance
D
VDSS - -200V
R
= 0.80D
DS(on)
G
In = -4.3A
D
s
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
LU
LU
Q
5
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter
Max.
Units
Continuous Drain Current, Vgs Q -10 V
-4.3
Id @ Tc = 25°C
A
Continuous Drain Current, Vgs @ -10 V
Id® Tc = 100°C
-2.7
I DM
Pulsed Drain Current ©
-17
35
Pd @ Tc = 25°C
Power Dissipation
W
Linear Derating Factor
0.28
W/°C
Vgs
Gate-to-Source Voltage
V
±20
Eas
Single Pulse Avalanche Energy ®
480
mJ
-4.3
Avalanche Current ©
A
Iar
3.5
Ear
Repetitive Avalanche Energy ©
mJ
Peak Diode Recovery dv/dt (a)
-5.0
V/ns
dv/dt
-55 to+150
Tj
Operating Junction and
Storage Temperature Range
Tstg
°C
Soldering Temperature, for 10 seconds
300 (1,6mm from case)
10 Ibf.in (1.1 N.m)
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Typ-
Min.
Max.
Units
Parameter
Junction-to-Case
Rejc
3.6
°C/W
Junction-to-Ambient
RftJA
65
689
IRFI9630G
I«R
Electrical Characteristics @ Tj = 25 C (unless otherwise specified)
Units
Test Conditions
Parameter
Min.
Typ.
Max.
Drain-to-Source Breakdown Voltage
V | Vgs=0V, Id=-250>iA
V(BR)DSS
-200
AV(br)dss/ATj Breakdown Voltage Temp. Coefficient
-0.24
V/°C i Reference to 25°C, lp=-1mA
Static Drain-to-Source On-Resistance
Q j Vgs=-10V, Id=-2.6A ©
RDS(on)
0.80
Gate Threshold Voltage
VGS(th)
-4.0
V : Vds=Vgs, lp=-250fiA
-2.0
Forward Transconductance
S Vds=-50V, lp=-2.6A ©
2.4
gfs
Vds=-200V, Vgs=0V
-100
Drain-to-Source Leakage Current
Idss
Vds=-160V, Vgs=0V, Tj=125°C
-500
Gate-to-Source Forward Leakage
Vgs=-20V
-100
Igss
nA
Gate-to-Source Reverse Leakage
Vgs=20V
100
Qg
Total Gate Charge
1d=-6.5A
Vds=-160V
Vgs~-1OV See Fig. 6 and 13 ©
29
nC
Gate-to-Source Charge
Qgs
5.4
Qgd
Gate-to-Drain ("Miller") Charge
15
Turn-On Delay Time
Vdd=-1 00V
Id~-6.5A
Rg=12Q
12
td(on)
Rise Time
27
tr
ns
Turn-Off Delay Time
28
td (off)
Fall Time
24
Rd=15Q See Figure 10©
ti
Between lead,
6 mm (0.25in.)
from package
and center of
die contact
Ld
Internal Drain Inductance
4.5
nH
Internal Source Inductance
; Ls
7.5
I Cjss
j Cqss
Input Capacitance
VGs=0V
Vds=-25V
/=1.0MHz See Figure 5
700
PF
Output Capacitance
200
Crss
Reverse Transfer Capacitance
40
C
Drain to Sink Capacitance
pF
12
/=1.0MHz
Source-Drain Ratings and Characteristics
Units
Test Conditions
Parameter
Min.
Typ.
Max.
Continuous Source Current
MOSFET symbol
Is
-4.3
(Body Diode)
showing the
A
G*
Pulsed Source Current
integral reverse
p-n junction diode.
Ism
-17
(Body Diode) ©
Is
Diode Forward Voltage
V
Tj=25°C, ls=-4.3A, VGs=0V ©
VsD
-6.5
Reverse Recovery Time
300
Tj=25°C, If=-6.5A
di/dt=100A/(is ©
200
trr
ns
Reverse Recovery Charge
Qrr
2.0
2.9
p.C
Forward Turn-On Time
Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Ld)
ton
Notes:
© Repetitive rating: pulse width limited by
max. junction temperature (See Figure 11)
© Isd^-6.5A, di/dt<120A/(xs, Vdd^V(br)DSS, © t=60s,/=60Hz
Tj<150°C
@ Pulse width < 300 fis; duty cycle <2%.
© Vdd=-50V, starting Tj=25°C, L=38mH
RG=25n, Ias=-4.3A (See Figure 12)
690

								
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