Docstoc

U14 NA50

Document Sample
U14 NA50 Powered By Docstoc
					                                                                                  STU14NA50
                                                 N - CHANNEL ENHANCEMENT MODE
                                                     FAST POWER MOS TRANSISTOR
                                                                                       PRELIMINARY DATA
        TYPE              V DSS         R DS(on)        ID
STU14NA50                500 V        < 0.36 Ω         14 A

s   TYPICAL RDS(on) = 0.31 Ω
s   EFFICIENT AND RELAIBLE MOUNTING
    THROUGH CLIP
s   ± 30V GATE TO SOURCE VOLTAGE RATING
s   REPETITIVE AVALANCHE TESTED
s   LOW INTRINSIC CAPACITANCE                                                                  3
                                                                                           2
s   100% AVALANCHE TESTED                                                              1
s   GATE CHARGE MINIMIZED
s   REDUCED THRESHOLD VOLTAGE SPREAD
                                                                            Max220TM
DESCRIPTION
The Max220 TM package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die                    INTERNAL SCHEMATIC DIAGRAM
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
    Symbol                             Parameter                            Value                  Unit
     V DS      Drain-source Voltage (V GS = 0)                               500                     V
     VDGR      Drain- gate Voltage (R GS = 20 kΩ)                            500                     V
     V GS      Gate-source Voltage                                          ± 30                     V
      ID       Drain Current (continuous) at T c = 25 o C                    14                      A
                                                              o
      ID       Drain Current (continuous) at T c = 100 C                     8.8                     A
    I DM (•)   Drain Current (pulsed)                                        56                      A
                                                   o
     P tot     Total Dissipation at T c = 25 C                               160                    W
               Derating Factor                                              1.28                   W/ o C
                                                                                                    o
     T stg     Storage Temperature                                        -65 to 150                    C
                                                                                                    o
      Tj       Max. Operating Junction Temperature                           150                        C
(•) Pulse width limited by safe operating area

October 1997                                                                                                1/5

				
DOCUMENT INFO
Shared By:
Categories:
Stats:
views:13
posted:3/8/2010
language:English
pages:1
Warawut Wiriyabanjerd Warawut Wiriyabanjerd it
About I am electronics and computer technician and interested in computer networking in any field