A Digitally Tuned 1.1 GHz Subharmonic Injection-Locked VCO in 0.18µm - PDF
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A Digitally Tuned 1.1 GHz
Subharmonic Injection-Locked
VCO in 0.18µm CMOS
Hesham Ahmed, Chris DeVries, and Ralph Mason
Department of Electronics, Carleton University, Ottawa, Canada
Email: hahmed@doe.carleton.ca, cdevries@doe.carleton.ca, rmason@doe.carleton.ca
Abstract phase noise.
In an attempt to eliminate offchip components, integrated
In this paper, a second-order digitally controlled Q-enhanced filters provide a promising solution for receiver
oscillator, based on subharmoninc injection locking, is filtering [4]. A Q-enhanced filter in the receive chain can be
presented. The prototype design is implemented in a 0.18µm converted to an oscillator by simply adjusting the bias current
standard CMOS process. The implemented injection-locked to increase its Q. The resulting oscillator can be used as a
oscillator, with a resonant frequency of 1.1 GHz, provides a VCO in the transmit chain for systems using half duplex
low phase noise of –99.7 dBc/Hz at a 50 KHz offset. The operation. Use of Q-enhanced filters as VCOs has been
oscillator is injection-locked with the eleventh harmonic of a proposed previously but their use has been limited to a
low frequency 100 MHz PLL. Using switched-capacitor conventional RF PLL architecture [5]. One problem with
banks, the oscillator can be digitally tuned to within this type of VCO is that they generally have higher phase
300 KHz of the injection locking frequency which allows it to noise as the circuits are not optimized for the VCO function.
be locked with an input signal as low as –53 dBm. The Through injection locking of such VCOs, this problem can
oscillator has an overall tuning range of 20% and together be overcome. Using this approach, the overall chip area can
with an input amplifier consumes only 688 µW when be reduced by eliminating the need for a separate VCO and
powered by a single 1.6V supply voltage. RF PLL in the transmit chain.
In this paper, the application of injection locking of an
1. Introduction oscillator is explored. This oscillator is within a transceiver
structure that allows it to be digitally controlled thereby
As gigahertz-band communication is becoming more improving its locking range and phase noise and reducing the
mature, the realization of a single chip transceiver becomes power consumption significantly.
more demanding, with the need for lower cost, reduced size
and less power hungry transceivers. The motivation for this 2. Injection-Locked Frequency Oscillators
work is the reduction in overall transmitter power
consumption and reuse of receiver building blocks to achieve The process of injection locking is a fundamental
a more compact transceiver structure. property of oscillators [2]. Depending on the ratio of the
For wireless transceivers, the Local Oscillator (LO) is injection frequency to the oscillator frequency, injection
generally based on an RF PLL architecture that consumes locking can be categorized into three distinct types: first-
considerable power. The low phase noise VCO and PLL harmonic, subharmonic and superharmonic [7]. Injection
prescaler, which operate at the highest frequency, dissipate locking is used to lock a free-running oscillator to an external
the majority of this power [1]. An alternative method is the incident signal. When a free running oscillator is injected
use of a low frequency PLL that can be used to injection-lock with a periodic signal fc it will lock to and track the
a VCO to one of its harmonics [2]. This provides a number injected signal over a Locking BandWidth (LBW) given by
of advantages. First, you do not require a separate PLL for fc ± LBW/2. The phase noise of the output tracks the phase
the LO. The low frequency PLL can be the same PLL that is noise of the injected clock over a wide bandwidth [8].
used for transceiver clock generation and therefore does not The LBW is dependent on the level of the injected signal.
require any extra power. Second, you do not require a low To accommodate process and environment variations, typical
phase noise VCO as the phase noise will be determined by RF applications require an LBW of 25-50 MHz greater than
the clock PLL, which allows a significant reduction in the the signal bandwidth. Achieving this LBW requires a large
VCO power consumption. A major drawback with this injection signal power. For subharmonic injection locking,
approach is that the clock PLL phase noise will be increased the harmonic often has significantly lower power than the
by the square of the injection locked harmonic [3]. fundamental, which therefore must have an even larger
Therefore, care must be taken to minimize the clock PLL power for correct locking.
If the oscillator free running frequency can be guaranteed 4. Injection Lock Amplifier and VCO Design
to be close to the injection harmonic frequency, independent
4.1 Circuit Design
of process and environmental variation, the required LBW
can be greatly reduced. As a result, the injection signal Figure 2 illustrates a simplified circuit diagram of the
power and associated power dissipation can be reduced. implemented injection-locking amplifier and VCO. The
circuit consists of three basic parts, an input
3. System Architecture transconductance or amplifier stage, a tank circuit and a
negative resistance or Q-enhancement transconductance.
Figure 1 shows the overall transceiver system
architecture. The top part of the figure shows the receive
chain which consists of an input RF switch (1), LNA (2), Q- Vf
enhanced band select filter (3), attenuator (4), transconductor
(5), Q-enhanced channel select filter (6), RF amplifier (7) M2a M2b
and sub-sampling mixer (8). The lower block diagram shows out+
out−
the transmit chain which consists of injection lock amplifier in+
M1a M1b
M3a Vdegen M3b
(9), injection lock VCO (10), up-converting mixer (11), in−
M4
preamp (12) and PA (13). For transmit, the Q-enhanced
band select filter (3) is converted to the injection lock VCO VQ
R1
(10) by increasing its bias current. Also note that the tank
circuit of the Q-enhanced channel select filter (6) is used for
the tank of the mixer (11) in the transmit chain. All parts of
the transceiver are controlled by eight or 16-bit control Figure 2. Injection Amplifier and VCO Circuit Diagram
DACs (14) that can be used to digitally control the frequency
and Q of the injection-locked VCO and transmit chain tuned The input transconductance uses a standard cascode LNA
mixer. A TX DAC (15) is used to convert data from the structure. The filter tank circuit makes use of offchip
baseband processor. The focus of this paper is on the inductors to obtain better quality factor and thus less power
highlighted portion of the block diagram, which includes the consumption. Switched-capacitor banks are used in place of
injection lock amplifier and VCO as well as the process for varactors of a conventional RF tank circuit since they provide
pre-tuning the VCO before injection locking. higher Q, larger tuning range and better noise rejection
operation. The enhancement transconductor, which is a basic
differential pair, consists of transistors M3a,b.
Also, not shown, are two differential source follower
stages used for testing the outputs of the injection-locked
1 2 3 4 5 6 7 8
VCO with a 50 ohm load.
It can be shown that by connecting a negative resistance
LNA Gm circuit across a tank circuit can result in a Q given by [7],
To 1 ω 0C
fs ADC Q= ⋅ Qo = (1)
1 − g m Ro go − gm
where Qo is the initial Q of the tank circuit (without
enhancement and typically inductor limited i.e. Qo≈ Ro/ωoL=
1/goωoL), go is the equivalent parallel losses in the tank
circuit, gm is the negative transconductance, C is the tank
circuit capacitance and ωo is the center frequency given by,
9 10 11 12 13
1
PLL PA ωo = (2)
LC
14 7 8 By setting gm close to go, the Q of the circuit can be set
TX arbitrarily high and the circuit will oscillate at ωo.
Baseband / DAC
uProcessor ... DAC
15 To 4.2 Injection Lock VCO Tuning
From fs ADC
ADC Tuning of the VCO is achieved using direct digital tuning
that does not require an input reference [9]. A sub-sampling
mixer, a typical sample and hold circuit with an input
Figure 1. A Proposed CMOS Transceiver Architecture bandwidth large enough to handle RF signals, is used to
sample the RF signal to a much lower digital IF signal. A
low-frequency clock PLL is used to generate the sampling 30
frequency and an ADC, similar to that in [10], is used to
25
digitize the signal. A digital baseband circuit that is used for
receive signal demodulation is reused to measure the
20
LBW [MHz]
frequency of the VCO. An on-chip microcontroller uses the
measured frequency to digitally adjust the free running VCO 15
frequency. The digital control is achieved by turning the tank
circuit switched-capacitor banks on and off. Using a small 10
unit capacitor size of 5 fF, the free running frequency can be
adjusted by 300KHz steps over a 20% tuning range. 5
Once the VCO has been tuned to within 300KHz of the
0
desired injection locking harmonic frequency, the clock PLL
-60 -50 -40 -30 -20
frequency is switched to the injection locking fundamental
frequency and applied to the injection-locking amplifier. The Injection Locking Power [dBm]
injection locking fundamental frequency is typically higher
Figure 4. Locking BandWidth vs. Injected Signal Power
than the receive sub-sampling frequency to minimize phase
noise (i.e. use a lower harmonic) and reduce transmit spurs Figure 4 shows the Locking BandWidth as a function of
by having non-desired harmonics of the clock PLL out of the injected signal power. It can be seen that a signal power
band. of –53 dBm is sufficient to lock the VCO as long as the free
For the purposes of this paper, a sub-sampling frequency running frequency is within 1 MHz of the injection signal.
of 45 MHz was used for tuning the free running VCO and a The free running VCO tuning algorithm is insensitive to
frequency of 100 MHz was used for the injection locking process and environment conditions and allows the VCO to
fundamental. The injection locking VCO was locked to the be tuned to within 300 KHz of the injection harmonic
th
11 harmonic of the clock PLL at 1.1 GHz. frequency. This allows the VCO to be locked with a minimal
injection harmonic power. Without the tuning algorithm it
5. Experimental Results would typically require more than 20MHz of LBW and an
injection locking harmonic power of more than –25 dBm.
The test chip was fabricated in a 0.18µm standard CMOS
process. The chip was bonded directly to a test board using
chip-on-board bonding (see Figure 3).
VCO PA
Mixer
Rfamps / Sub-
I.L. Amp Sampler
µProcessor /
SPI & Memory
Figure 5. Oscillator Spectrum
Figure 5 shows the measured output spectrum of the
Figure 3. Chip Photomicrograph VCO using an HP8564E spectrum analyzer. As can be seen,
th
the spur due to the 9 harmonic is –54.34 dBc relative to the
th th
In the free-running mode, the injection locking VCO is injection locked 11 harmonic. The 10 harmonic is an even
biased using a 1.6V supply with a bias tail current of 270 µA harmonic of the PLL square wave output and is therefore
and has a tuning range from 990 MHz to 1.21 GHz. To greatly attenuated. It was measured at –68.8 dBc using a
injection lock the VCO, a bias current of 160 µA is applied smaller resolution bandwidth for the spectrum analyzer.
to the injection-locking amplifier to give an overall bias These spurs will be further suppressed when passed trough
current of 430 µA. the tuned mixer, PA matching circuit and antenna.
7. References
Free running [1] W. Chen, C. L. Kuo, “18 GHz and 7 GHz
Superharmonic Injection-locked Dividers in 0.25 µm
(-79.7 dBc/Hz)
CMOS Technology,” Proceedings of the 28th
European Solid-State Circuits Conference
ESSCIRC2002, pp. 89-92, Florence, Italy, September
2002.
[2] X. Zhang, X. Zhou, B. Aliener, and A.S. Daryoush, “A
Study of Subharmonic Injection Locking for Local
Oscillators,” IEEE Microwave Guided Wave Letters,
Injection locked vol. 2, pp. 97-99, March 1992.
(-99.83 dBc/Hz) [3] D. Shen, C. Hwang, B. Lusignan, B. Wooley, “A 900-
MHz RF Front –End with Integrated Discrete-Time
Filtering,” IEEE Journal of Solid State Circuits, vol.
31, no. 12, pp. 1945-1954, December 1996.
[4] W. B. Kuhn, N. K. Yanduru, S. Wyszynski, “Q-
Figure 6. Phase Noise before and after Injection Locking enhanced LC Bandpass Filters for Integrated Wireless
Applications," IEEE Transactions on Microwave
Finally, the HP8564E spectrum analyzer has been used to Theory and Techniques, vol. 46, no. 12, December
measure the phase noise of the oscillator. Figure 6 shows the 1998.
phase noise performance of the injection locked VCO before [5] W. B. Kuhn, “Design of Integrated RF Bandpass
and after injection locking. The free running VCO has a Filters and Oscillators for Low-Power Radio
phase noise of –79.7 dBc/Hz at 50 KHz offset. When Receivers,” IEEE International ASIC Conference, pp.
injection-locked with a 100 MHz PLL signal, the phase noise 87–91, September 1996.
is improved to –99.8 dBc/Hz at 50 KHz offset.
[6] R. Adler, “A Study of Locking Phenomena in
Measurement results for the VCO performance are Oscillators,” Proceedings of IRE, vol. 34, pp. 351-357,
summarized in Table 1. The chip micrograph, implemented June 1946. Reprinted Proceedings IEEE, vol. 61, no.
in a standard digital 0.18µm CMOS technology, is shown in 10, pp. 1380-1385, October 1973.
Figure 3. [7] H. R. Rategh, T. Lee, “Superharmonic Injection-
Locked Frequency Dividres,” IEEE Journal of Solid-
TABLE 1. SUMMARY OF VCO PERFORMANCE RESULTS
State Circuits, vol. 34, no. 6, pp. 813-821, June 1999.
Technology Standard 0.18µm CMOS
Power Supply 1.2 – 1.8 V
[8] P. Kinget, R. Melville, D. Long, V. Gopinathan, “An
Center Frequency 990 – 1210 MHz
Injection Locking Scheme for Precision Quadrature
Harmonic Spurs < -54.34 dBc
Generation,” IEEE Journal of Solid-State Circuits,
Phase Noise Free running -79.7 dBc / Hz
vol. 37, no. 7, pp. 845-851, July 2002.
@50 kHz Injection-Locked -99.8 dBc / Hz [9] C. DeVries, R. Mason, “A 0.18µm CMOS, High Q-
Injection Amp. 270 µA
enhanced Bandpass Filter with Direct Digital Tuning,”
Current
VCO 160 µA
Proceedings of IEEE Custom Integrated Circuits
Conference CICC2002, pp. 279-282, Florida, USA,
Total Power (Vdd = 1.6 V) 688 µW
May 2002.
6. Conclusions [10] B. Song, “A Fourth Order Bandpass Delta-Sigma
Modulator with Reduced Number of Op amps,” IEEE
In this paper, a subharmonic injection-locked, digitally Journal of Solid-State Circuits, vol. 30, no. 12,
controlled, VCO, implemented in a standard 0.18µm CMOS December 1995.
technology, is presented. The VCO can be locked using a
low-power, low frequency clock PLL with reduced injection
locking power. The free running VCO is tuned using a
subsampling mixer, ADC and digital controller. The VCO
can provide low spurious levels and good phase noise while
consuming only 688 µW.
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