Seminar – VIII, Spring 2009 Advanced Electronic Technology Center Determining DC/RF Survivability Limits of GaAs Semiconductor Circuits
Carlos Gil M/A-COM Technology Solutions, 100 Chelmsford Street, Lowell, MA 08154, USA
Methods for determining long term product reliability due to channel temperature, environmental conditions or bias have been thoroughly documented and understood using standard experimental and analytical techniques. In most cases these include stressing parts at very high
temperatures in order to accelerate the failure mechanisms, but not all failure mechanisms are accelerated by temperature. This is the case when operating devices are under DC/RF overdrive conditions, which lead to field driven failure mechanisms. These mechanisms don’t scale with temperature, and could be decelerated if induced under high temperature stress. Many groups have looked at these high field conditions, but due to the added complexities, a standard stress methodology has not been developed. The situation is aggravated by the fact that most product datasheets only point to one absolute maximum operating value, which many times is confused with a survivability limit. In this presentation we will discuss the basic
techniques currently used in reliability studies and a method we have developed for characterizing field driven failure mechanisms and their survivability limits based on input power and bias voltage.
Date: Friday, April 17, 2009 Time: 3:30pm; Room: BL-301 (Conference Room)