Quantum Well Based on Graphene and Narrow-Gap Semiconductors

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carbon nanotubes, quantum dots, quantum dot, phys. rev, phys. rev. lett, thin films, narrow gap semiconductors, field-effect transistors, graphene sheet, number of electrons, late news, magnetic field, band gap, quantum wells, carbon nanotube

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							Quantum Well Based on Graphene and Narrow-Gap Semiconductors
                                  P. V. Ratnikov and A. P. Silin
                                          Received August 26, 2008

   Abstract—The energy spectrum of a planar quantum well formed by two narrow-gap semicon-
   ductor strips with a graphene strip inserted between them was considered. It was shown that the
   gapless mode arises only in the case of inverted narrow-gap semiconductors. Taking into account the
   graphene speciﬁcity, the spin splitting of the energy spectrum of the asymmetric quantum well was
   calculated. Interface states and optical transitions were studied. It was shown that optical transitions
   are possible only with parity conservation.

   DOI: 10.3103/S106833560902002X

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