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Fujitsu FHX35LG Super Low-Noise HEMT by Flavio58

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									FHX35LG
Super Low Noise HEMT FEATURES
• Low Noise Figure: 1.2B (Typ.)@f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Packaging Available

DESCRIPTION
The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 3 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C.

Symbol VDS VGS Pt* Tstg Tch

Rating 4.0 -3.0 290 -65 to +175 175

Unit V V mW °C °C

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG
Note: RF parameters are measured on a sample basis as follows: Lot qty. or to to or Sample qty. 125 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2)

Symbol IDSS gm Vp VGSO NF Gas Rth

Test Conditions VDS = 2V, VGS = 0V VDS = 2V, IDS = 10mA VDS = 2V, IDS = 1mA IGS = -10µA VDS = 3V, IDS = 10mA f = 12GHz Channel to Case

Min. 15 40 -0.2 -3.0 8.5 -

Limit Typ. Max. 40 85 60 -1.0 -2.0 1.2 10.0 220 1.6 300

Unit mA mS V V dB dB °C/W

1200 1201 3201 10001

less 3200 10000 over

Edition 1.1 July 1999

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FHX35LG
Super Low Noise HEMT
POWER DERATING CURVE

300 Total Power Dissipation (mW) 250 200 150 100 50 0 0 50 100 150 200 LG

Ambient Temperature (°C)

DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE

50 VGS =0V Drain Current (mA) 40 30 20 10 0 -0.2V -0.4V -0.6V -0.8V -1.0V 1 2 3

Drain-Source Voltage (V)

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FHX35LG
Super Low Noise HEMT

NF & Gas vs. FREQUENCY 20 VDS=3V IDS=10mA Noise Figure (dB) Noise Figure (dB) 3 Gas 15 Associated Gain (dB) 3

NF & Gas vs. IDS f=12GHz VDS=3V Gas 10 2 9 8 7 12 Associated Gain (dB) 11

2

10

1

NF

5

NF 1

0

4

6

8 10 12

18 20

0

10

20

30

Frequency (GHz)

Drain Current (mA)

NF & Gas vs. TEMPERATURE 2.0 f=12GHz VDS=3V IDS=10mA 15 Associated Gain (dB) Gas 10 Output Power (dBm)

OUTPUT POWER vs. INPUT POWER 25 f=12GHz VDS=3V IDS=15mA

Noise Figure (dB)

1.5

15

10

1.0 NF

5

5 0 100 200 300 400 -5 0 5 10

Ambient Temperature (°K)

Input Power (dBm)

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FHX35LG
Super Low Noise HEMT
TYPICAL NOISE FIGURE CIRCLE
+j50 +j100 +j25

+j250 +j10 2.5 0 3.0

Γopt

1.5

2.0

f = 12 GHz VDS = 3V IDS = 10mA Γopt = 0.56∠175° Rn/50 = 0.08 NFmin = 1.2dB

-j10

-j250

-j25

-j100

Ga(max) AND |S21|2 vs. FREQUENCY
20 VDS = 3V IDS = 15mA 15 15 Ga(max) 10 |S21|2 5 5 10 20

Gain (dB)

0

4

6

8 10 12

20

0

Frequency (GHz)

NOISE PARAMETERS
VDS = 3V, IDS = 10mA

Freq. (GHz) 2 4 6 8 10 12 14 16 18

Γopt (MAG) (ANG) 0.81 0.74 0.69 0.64 0.60 0.56 0.53 0.50 0.48 32 63 93 127 148 175 -162 -139 -117

NFmin (dB) 0.40 0.50 0.68 0.86 1.03 1.20 1.38 1.54 1.70

Rn/50 0.58 0.42 0.30 0.20 0.12 0.08 0.08 0.10 0.14

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FHX35LG
Super Low Noise HEMT
+j50 +j100 +j25
4 .16

S11 S22

+90°

S21 S12

SCALE FOR |S12|

.12 .08 .04 4 12 8 8

20 GHz

+j10
20 GHz

+j250

0

12 12

25

50Ω

100

0.1 GHz 0.1 GHz

180°

0.1 GHz 4 3

2

1

0.1GHz

0°

SCALE FOR |S21|
20 GHz

-j10
8

8

4

12

-j250

20 GHz

-j25
4

-j100 -j50 -90°

FREQUENCY (MHZ)
100 500 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000

S11 MAG
.996 .994 .982 .950 .912 .867 .821 .783 .757 .738 .726 .707 .680 .654 .638 .626 .607 .565 .528 .484 .421 .380

ANG
-3.5 -12.1 -23.5 -44.7 -64.6 -84.0 -101.6 -117.5 -130.9 -142.8 -153.8 -164.5 -174.1 176.1 166.0 157.1 147.8 138.4 127.2 112.8 93.5 74.2

S-PARAMETERS VDS = 3V, IDS = 10mA S21 S12 MAG ANG MAG ANG
4.576 4.548 4.471 4.304 4.026 3.742 3.436 3.132 2.881 2.659 2.497 2.347 2.206 2.101 2.035 2.003 1.975 1.917 1.924 1.966 1.932 1.991 177.2 169.0 158.5 139.3 121.0 103.1 86.6 71.6 57.9 45.0 32.4 20.2 8.4 -3.4 -15.1 -26.2 -37.6 -50.1 -62.9 -77.1 -91.7 -107.4 .002 .012 .023 .043 .059 .071 .079 .085 .087 .088 .090 .092 .090 .090 .091 .093 .094 .097 .102 .109 .116 .127 81.2 79.3 73.1 57.9 44.6 31.8 20.0 9.8 0.9 -7.1 -15.3 -21.7 -27.8 -35.5 -42.6 -49.6 -55.8 -64.7 -73.3 -86.2 -96.2 -110.9

S22 MAG
.516 .517 .513 .498 .483 .462 .446 .439 .441 .452 .468 .480 .494 .503 .514 .537 .559 .564 .567 .572 .581 .547

ANG
-2.5 -10.2 -19.9 -38.0 -54.9 -71.9 -87.6 -102.2 -115.3 -126.7 -136.9 -146.1 -156.0 -164.8 -173.8 178.4 171.0 162.7 154.4 142.7 133.1 124.3

Download S-Parameters, click here

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FHX35LG
Super Low Noise HEMT
Case Style "LG" Metal-Ceramic Hermetic Package

4.78±0.5 1.5±0.3 (0.059) 1.78±0.15 1.5±0.3 (0.07) (0.059)

1.5±0.3 (0.059)

1.0 (0.039)

1

1.78±0.15 1.5±0.3 (0.07) (0.059)

4.78±0.5

4 3

2

0.5 (0.02)

1.3 Max (0.051)

1. 2. 3. 4.
0.1 (0.004)

Gate Source Drain Source

Unit: mm(inches)

6


								
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