Fraunhofer IAFs gallium nitride technology enables independent

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Fraunhofer IAFs gallium nitride technology enables independent Powered By Docstoc
					Press release
                                                                           Freiburg,
                                                                           23rd July 2007
                                                                           page 1




                                      Fraunhofer IAFs gallium nitride
                                      technology enables independent
                                      European production

                                      New semiconductor materials increase the
                                      performance of broad band amplifiers for mobile
                                      communication

                                      In the future the gallium nitride technologies (GaN) from the
                                      Fraunhofer Institute for Applied Solid-State Physics IAF will
                                      be used in broad-band amplifiers for mobile communication.
                                      The new semiconductor materials have better performance,
                                      while enabling more flexible applications together with
                                      reduced energy consumption leading to reduced system
                                      costs. In cooperation with Fraunhofer IAF the industrial
                                      partners UMS United Monolithic Semiconductors, Ulm and
                                      NXP Semiconductors, formerly Philips Semiconductors in
                                      Nijmegen, will develop this technology to marketability.

                                      „The gallium nitride technology again proves Europe´s ability
                                      for innovations“, says Professor Günter Weimann, director of
Press contact:                        Fraunhofer IAF. „The European system houses for mobile
Dr. Klaus Heidler, Solar Consulting   communication will be able to offer competitive components
Solar Info Center
                                      worldwide. This also secures high-tech jobs in Germany.“
D-79072 Freiburg
Telefon +49 (0) 761 38 09 68-0
Fax +49 (0) 761 38 09 68-11           Until now the amplifiers in base stations for mobile
info@solar-consulting.de              communication rely on devices based on silicon technologies.
Fraunhofer Institute for Applied      GaN opens completely new opportunities: „Compared to
Solid-State Physics IAF               silicon the material withstands higher supply voltages, higher
Public relations                      temperatures and has an unsurpassed efficiency“, Dr.
Dr. Harald D. Müller
Tullastr. 72
                                      Michael Mikulla, department head at Fraunhofer IAF,
D-79108 Freiburg                      describes the advantages. This results in larger bandwidth
phone +49 (0) 761 5159-458            more output power and more flexibility at reduced costs and
fax +49 (0) 761 5159-111
harald.mueller@iaf.fhg.de
                                      reduced energy consumption.
Press release
                                                                            Freiburg,
                                                                            23rd July 2007
                                                                            page 2




                                      In the near future base stations can be equipped with single
                                      amplifier modules that cover the complete relevant
                                      frequency band between 1 GHz and 3 GHz. Up to now more
                                      than one amplifier is necessary for this application.

                                      Already in September 2006 NXP Semiconductors and UMS
                                      announced a strategic alliance with Fraunhofer IAF. Now the
                                      second phase of the cooperation has been launched, in
                                      which the future volume production at UMS will run with
                                      the know-how of the IAF.

                                      The Fraunhofer IAF in Freiburg is a leader in the development
                                      of gallium nitride technologies. Since 1992 IAF researchers
                                      have been working on this designer semiconductor, which is
                                      not found in nature. Using MOCVD procedures (Metal
                                      Organic Chemical Vapour Deposition) it is possible to
                                      synthesize these materials at temperatures around
                                      1.000 degrees Celsius. The temperature has to be stabilized
                                      to an accuracy of 10 degrees.

                                      The gallium nitride components will not simply substitute
                                      well known silicon based transistors. It will also be necessary
                                      to develop new circuit architectures in order to utilize all
                                      advantages of the new material.

                                      Further device developments at Fraunhofer IAF based on the
Press contact:
Dr. Klaus Heidler, Solar Consulting   same materials are the blue and white LEDs, which currently
Solar Info Center                     have a big impact on lighting technologies.
D-79072 Freiburg
Telefon +49 (0) 761 38 09 68-0
Fax +49 (0) 761 38 09 68-11           The Fraunhofer Institute for Applied Solid State Physics was
info@solar-consulting.de              founded in 1957 and with a staff of 200 employees it is
                                      today leading in the development of III-V-compound
Fraunhofer Institute for Applied
Solid-State Physics IAF               semiconductors and their applications in Micro- und
Public relations                      Optoelectronics.
Dr. Harald D. Müller
Tullastr. 72
D-79108 Freiburg
phone +49 (0) 761 5159-458
fax +49 (0) 761 5159-111
harald.mueller@iaf.fhg.de
Press release
                                                                      Freiburg,
                                                                      23rd July 2007
                                                                      page 3




                                      This and other photos are available from
                                      Dr. Klaus Heidler Solar Consulting




                                      IAF GaN process on 3“-Wafer,
                                      Photo: Fraunhofer IAF




Press contact:
Dr. Klaus Heidler, Solar Consulting
Solar Info Center
D-79072 Freiburg
Telefon +49 (0) 761 38 09 68-0
Fax +49 (0) 761 38 09 68-11
info@solar-consulting.de

Fraunhofer Institute for Applied
Solid-State Physics IAF
Public relations
Dr. Harald D. Müller
Tullastr. 72
D-79108 Freiburg
phone +49 (0) 761 5159-458
fax +49 (0) 761 5159-111
harald.mueller@iaf.fhg.de