1998 - Philips Semiconductors - RF Transmitting Transistor and Power Amplifier Fundamentals - Symbols

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					Philips Semiconductors

    RF transmitting transistor and
                                                                                                        Symbols
    power amplifier fundamentals

5     SYMBOLS

Table 5-1
α             Coefficient of linear thermal expansion          lch        Channel length
βl            Electrical line length (stripline)              ppm        Parts per million
γ             Mathematical variable                           PL         Load power
εr            Dielectric constant (relative)                  PS         Forward power delivered by source
ε             Mathematical variable                           Ptot       Maximum RF dissipation at a mounting
ηc            Collector efficiency                                        base temperature of 25 °C
λ             Failure rate; wavelength                        R          Resistance
ω             Angular frequency; maximum angular              RDS(on)    Total resistance in the drain-source circuit at
              frequency; minimum angular frequency                       a high, positive VGS
ωT            Transition frequency (2πfT)                     Rh         Higher resistance
A             Attenuation; difference in IMD between          Rl         Lower resistance
              driver and final stage                           RL         Load resistance
B             Susceptance; absolute bandwidth; increase       Rp         Parallel resistance
              in IMD in amplifier output                       Rs         Series resistance
C             Capacitance                                     r          Reflection coefficient
Cc            Total collector or output capacitance           s          Voltage standing wave ratio
Cre           Feedback capacitance, i.e. Ccb                  SOAR       Safe Operating ARea
Cis           Input capacitance when the output is            Tstg       Maximum (Tstg max) and minimum (Tstg min)
              short-circuited                                            temperatures at which a device may be
Cos           Output capacitance when the input is                       stored when not in operation
              short-circuited                                 Tj         Maximum junction temperature in operation
Crs           Feedback capacitance; this is the same as       V(BR)CBO   Collector-base breakdown voltage with
              Cgd                                                        open emitter
Cp            Parallel capacitance                            V(BR)CEO   Collector-emitter breakdown voltage with
Cs            Series capacitance                                         open base
d             Intermodulation distortion; mathematical        VCBO       Maximum collector-base voltage with open
              variable                                                   emitter
E(SBR)        (Reverse) second breakdown energy               VCEO       Maximum collector-emitter voltage with
f             Frequency                                                  open base
fT            Transition frequency                            vce        Collector-emitter voltage (instantaneous
G             (Power) gain                                               value)
g             (Normalized) filter element identifier            VCES       Maximum collector-emitter voltage with a
              (resistance, capacitance or inductance)                    short circuit between base and emitter
gfs           Forward transconductance                        VCE sat    Collector-emitter saturation voltage
hFE           DC current gain                                 VCER       Maximum collector-emitter voltage with a
hfe           RF current gain                                            small resistor e.g. 10 Ω, between base and
IC            Collector DC current (ic denotes varying                   emitter
              value)                                          VDS        Drain-source voltage
ICM           Maximum instantaneous value of the              VEBO       Maximum emitter-base voltage with open
              collector current                                          collector
ID            Drain current                                   VGS        Gate-source voltage
IDSX          Maximum drain current that a device can         VGS(th)    Gate voltage at which drain current starts to
              deliver                                                    flow
k             Constant; mathematical variable:                VSWR       Voltage standing wave ratio
              k = γ + √(γ2 + 1)                               X          Reactance
L             Inductance                                      Xp         Parallel reactance
Lp            Parallel inductance                             Xs         Series reactance
Ls            Series inductance


1998 Mar 23                                               1

				
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