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Optical interconnect on CMOS ICs made with Compact Silicon nitride building blocs and photodetector R. Orobtchouk1, B. Han1, P.R.A. Binetti2, S. Jeannot3, X.J.M. Leijtens3, T. Benyattou1, JM. Fedeli4 1 Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon , Bât. Blaise Pascal , 7 avenue Jean Capelle 69621 Villeurbannne cedex, France 2 COBRA Research Institute, Technische Universiteit Eindhoven, Postbus 513, 5600 MB Eindhoven, The Netherlands 3 STMicroelectronics, 850 rue Jean Monnet, 38921 Crolles, France 4 CEA-DRT/LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France According to the ITRS roadmap, optical interconnects have been identified as a promising alternative for avoiding the bottleneck in the global interconnection of the future generation of CMOS ICs. Results on modelling and optical characterization of the basics compact building blocks made on a Si3N4 strip waveguide (0.4µm thick by 0.8 µm width) technology ( bends and MMI) used for the routing of an optical clock signal will be shown. Basic elements exhibit low losses of 1.5 dB/cm, 0.1 dB/bend and 0.5 dB at =1.55 µm respectively for the waveguide, a 15 µm radius bend and a 1 by 2 MMI. A first 1 by 16 optical distribution has been demonstrated and will be presented. We present also the modelling of a compact guide to guide coupler of 16 µm length used for the coupling to a III-V photodetector (PD) on top of the optical layer by wafer bonding. Optimization of the PD leads to a predicted 3dB bandwidth of 25 GHz. The optical coupler could be used also for the coupling to a III-V source that provide a full integration of an optical link. This work is supported by STREP European program "Picmos"
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