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					       UV-NIL OPTICAL MAKSING LAYER FIRST PROCESS FLOW

Step       Process Description    Equipment    Process Details
 1                 Start                       Fused Silica, double sided polished
 2             Initial Clean         SRD
 3              Cr Sputter         Metallica   400 Å Target
 4                Clean              SRD
 5             HMDS Prime         YES HMDS     30 min
 6          Optical Resist Coat   SVG Coat     1 µm, No EBR
 7            Optical Expose      Karl Suss
 8          Post-Expose Bake                   1 min.
 9           Optical Develop      SVG Dev      60sec.
10             Dry Cr Etch          P5000      Want to start with Dry for learning purpose
11             Resist Strip        WbSolv      Acetone
12                Clean              SRD
13                Singe                        30 min
14          e-beam resist coat    SVG Coat     5%PMMA, need EBR
15           Post Coat Bake       Big Blue M   170ºC, 2 hr
16          E-Beam Exposure         Hitachi    with 50% dose increase
17           E-Beam Develop        WbSolv      1:3 MIBK:IPA mixture at 22ºC for 30-40 sec.
18                 Stop            WbSolv      IPA, 15-30 sec.
19                 Dry             WbSolv
20               Descum            Drytek 2    30W, 15 Seconds @ 0.200 mT O2 pressure
21             Cr Dry Etch                     Al Chamber, Lam Poly or P-Quest
22             Resist Strip                    NMP @ 80ºC, 2 minutes
23                 Ash
24                Clean              SRD
25             Quartz Etch          P5000      Ch B or C, AMT (NF3), MRC
26                Clean              SRD
27              Inspection           SEM
28          Chrome Wet Strip      wbgeneral
29                Clean              SRD
30              Inspection
31                Clean              SRD



                                                                                             Ed Myers, Nov. 2003
       UV-NIL E-BEAM FIRST MASKING LAYER PROCESS FLOW

Step     Process Description    Equipment    Process Details
 1               Start                       Fused Silica, double sided polished
 2           Initial Clean         SRD
 3            Cr Sputter         Metallica   400 Å Target
 4              Clean              SRD
 5              Singe                        30 min
 6        e-beam resist coat    SVG Coat     5%PMMA, need EBR
 7         Post Coat Bake       Big Blue M   170ºC, 2 hr
 8        E-Beam Exposure         Hitachi    with 50% dose increase
 9         E-Beam Develop        WbSolv      1:3 MIBK:IPA mixture at 22ºC for 30-40 sec.
10               Stop            WbSolv      IPA, 15-30 sec.
11               Dry             WbSolv
12        Descum (Needed?)       Drytek 2
13           Cr Dry Etch          P5000      Al Chamber, Lam Poly or P-Quest
14           Resist Strip        WbSolv      NMP @ 80ºC, 2 minutes
15               Ash             Drytek 2
16              Clean              SRD
17           HMDS Prime         YES HMDS     30 min
18        Optical Resist Coat   SVG Coat     1 µm, No EBR
19          Optical Expose      Karl Suss
20        Post-Expose Bake                   1 min.
21         Optical Develop      SVG Dev      60sec.
22           Dry Cr Etch          P5000      Want to start with Dry for learning purpose
23           Resist Strip        WbSolv      Acetone
24              Clean              SRD
25           Quartz Etch          P5000      Ch B or C, AMT (NF3), MRC
26              Clean              SRD
27            Inspection           SEM
28        Chrome Wet Strip      wbgeneral
29              Clean              SRD
30            Inspection
31              Clean              SRD



                                                                                           Ed Myers, Nov. 2003

				
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