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					    Physics


    C        HEN                         Zengjun Chen, Ph.D.
                                         Assistant Professor, Physics
                                         College of Arts and Sciences
                                         Email: chenz@mytu.tuskegee.edu
                                         Office Phone: 334-727-8299
                                         Office Address: Luther Foster Hall, 508
                                         Tuskegee University, Tuskegee, AL 36088

                                        Biographical Sketch:
                                        Dr. Chen received his Ph.D. from Auburn
                                        University, Alabama. His current research focuses
                                        on experimental characterization of Wide Band-
                                        gap Semiconductor Materials, especially 4H-SiC.
                                        One critical problem is the poor interface quality
                                        between SiC and SiO2, which significantly lowers
                                        the channel mobility of MOS devices on SiC. Dr.
    Research Fields:                    Chen’s goal is seeking effective approaches to
                                        increase the channel mobility.
   Characterization of wide band-
     gap semiconductor materials
                                        Representative Publications:
    (4H-SiC, GaN, etc)
   Synthesis of low dimensional     1. Zengjun Chen, Ayayi C. Ahyi, Xingguang
    Nano-materials                      Zhu, et al, “MOS Charateristics of (000-1) 4H-
   Theoretical simulation of           SiC,” Journal of Electronic Materials, 39(5),
    solid state materials               2010, 526-529.
    Collaborations:                  2. Mingyu Li, Ayayi C. Ahyi, Xingguang Zhu,
                                        Zengjun Chen, et al, “Nickel Ohmic Contacts
   Dr. Sarit Dhar                      to N-type (0001) 4H-SiC,” Journal of
    Department of Physics               Electronic Materials, 39(5), 2010, 540-544.
    Auburn University                3. Xingguang Zhu, Ayayi C. Ahyi, Mingyu Li,
   Dr. Minseo Park                     Zengjun Chen, et al, “The effect of nitrogen
    Department of Physics               plasma anneal on the interface trap density and
    Auburn University                   the mobility of 4H-SiC MOSFET”, Solid-state
   Dr. Ayayi C. Ahyi                   Electronics, 57, 2011, 76-79.
    Department of Physics
    Auburn University

				
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