C HEN Zengjun Chen, Ph.D.
Assistant Professor, Physics
College of Arts and Sciences
Office Phone: 334-727-8299
Office Address: Luther Foster Hall, 508
Tuskegee University, Tuskegee, AL 36088
Dr. Chen received his Ph.D. from Auburn
University, Alabama. His current research focuses
on experimental characterization of Wide Band-
gap Semiconductor Materials, especially 4H-SiC.
One critical problem is the poor interface quality
between SiC and SiO2, which significantly lowers
the channel mobility of MOS devices on SiC. Dr.
Research Fields: Chen’s goal is seeking effective approaches to
increase the channel mobility.
Characterization of wide band-
gap semiconductor materials
(4H-SiC, GaN, etc)
Synthesis of low dimensional 1. Zengjun Chen, Ayayi C. Ahyi, Xingguang
Nano-materials Zhu, et al, “MOS Charateristics of (000-1) 4H-
Theoretical simulation of SiC,” Journal of Electronic Materials, 39(5),
solid state materials 2010, 526-529.
Collaborations: 2. Mingyu Li, Ayayi C. Ahyi, Xingguang Zhu,
Zengjun Chen, et al, “Nickel Ohmic Contacts
Dr. Sarit Dhar to N-type (0001) 4H-SiC,” Journal of
Department of Physics Electronic Materials, 39(5), 2010, 540-544.
Auburn University 3. Xingguang Zhu, Ayayi C. Ahyi, Mingyu Li,
Dr. Minseo Park Zengjun Chen, et al, “The effect of nitrogen
Department of Physics plasma anneal on the interface trap density and
Auburn University the mobility of 4H-SiC MOSFET”, Solid-state
Dr. Ayayi C. Ahyi Electronics, 57, 2011, 76-79.
Department of Physics