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					NPN Silicon High-Voltage Transistors                                                        PZTA 42
                                                                                            PZTA 43

q High breakdown voltage
q Low collector-emitter saturation voltage
q Complementary types: PZTA 92, PZTA 93 (PNP)




Type                Marking        Ordering Code               Pin Configuration          Package1)
                                   (tape and reel)             1    2    3     4
PZTA 42             PZTA 42        Q62702-Z2035               B       C           E   C   SOT-223
PZTA 43             PZTA 43        Q62702-Z2036

Maximum Ratings
Parameter                                       Symbol                 Values               Unit
                                                           PZTA 42         PZTA 43
Collector-emitter voltage                       VCE0       300                200           V
Collector-base voltage                          VCB0       300                200
Emitter-base voltage                            VEB0                          6
Collector current                               IC                        500               mA
Base current                                    IB                        100
Total power dissipation, TS = 124 ˚C            Ptot                      1.5               W
Junction temperature                            Tj                        150               ˚C
Storage temperature range                       Tstg                 – 65 … + 150

Thermal Resistance
Junction - ambient2)                            Rth JA                    ≤   72            K/W
Junction - soldering point                      Rth JS                    ≤   17




1)   For detailed information see chapter Package Outlines.
2)   Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.


Semiconductor Group                                  1                                             5.91
                                                                                         PZTA 42
                                                                                         PZTA 43


Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter                                              Symbol            Values            Unit
                                                                  min.   typ.     max.

DC characteristics
Collector-emitter breakdown voltage                    V(BR)CE0                            V
IC = 1 mA, IB = 0             PZTA 42                             300    –        –
                              PZTA 43                             200    –        –
Collector-base breakdown voltage                       V(BR)CB0
IC = 100 µA, IB = 0           PZTA 42                             300    –        –
                              PZTA 43                             200    –        –
Emitter-base breakdown voltage                         V(BR)EB0   6      –        –
IE = 100 µA, IC = 0
Collector-base cutoff current                          ICB0
VCB = 200 V                              PZTA 42                  –      –        100      nA
VCB = 160 V                              PZTA 43                  –      –        100      nA
VCB = 200 V, TA = 150 ˚C                 PZTA 42                  –      –        20       µA
VCB = 160 V, TA = 150 ˚C                 PZTA 43                  –      –        20       µA

Emitter-base cutoff current                            IEB0       –      –        100      nA
VEB = 3 V, IC = 0
DC current gain1)                                      hFE                                 –
IC = 1 mA, VCE = 10 V                                             25     –        –
IC = 10 mA, VCE = 10 V                                            40     –        –
IC = 30 mA, VCE = 10 V                                            40     –        –
Collector-emitter saturation voltage1)                 VCEsat                              V
IC = 20 mA, IB = 2 mA            PZTA 42                          –      –        0.5
                                 PZTA 43                          –      –        0.4
Base-emitter saturation voltage                        VBEsat     –      –        0.9
IC = 20 mA, IB = 2 mA

AC characteristics
Transition frequency                                   fT         –      70       –        MHz
IC = 20 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance                             Cobo                                pF
VCB = 20 V, f = 1 MHz                    PZTA 42                  –      –        3
                                         PZTA 43                  –      –        4




1)
     Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group                                2
                                                                                            PZTA 42
                                                                                            PZTA 43


Total power dissipation Ptot = f (TA*; TS)               Transition frequency fT = f (IC)
* Package mounted on epoxy                               VCE = 10 V, f = 100 MHz




Permissible pulse load Ptot max / Ptot DC = f (tp)       DC current gain hFE = f (IC)
                                                         VCE = 10 V




Semiconductor Group                                  3
                                                                              PZTA 42
                                                                              PZTA 43


Collector cutoff current ICB0 = f (TA)       Collector current IC = f (VBE)
VCB = 160 V                                  VCE = 10 V




Semiconductor Group                      4
This datasheet has been download from:

      www.datasheetcatalog.com

Datasheets for electronics components.

				
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